Electronic Properties and Growth of Novel InSb Based Quantum Wells

新型InSb基量子阱的电子特性和生长

• 批准号: 9624699
• 负责人: Michael Santos
• 金额: $ 31万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9624699&HistoricalAwards=false
• 关键词: Electronic; Properties; Growth; Novel; InSb

9624699 Santos This research project aims to advance the materials science of InSb/AlInSb heteroepitaxy, and to explore the properties of two-dimensional electron systems confined within InSb quantum wells. The extreme properties of InSb--small energy gap, high intrinsic electron mobility, small electron effective mass, large g-factor, and non-parabolic conduction band--are expected to lead to novel magneto-optical and magnetotransport behavior of electrons in InSb quantum wells at low temperatures. MBE growth of fully strained heterostructures on InSb substrates will be pursued and growth conditions optimized to achieve higher crystal quality than obtainable with GaAs substrates; growth conditions will also be studied to achieve high quality InSb/AlInSb heterostructures. Far IR laser spectroscopy will be used to assess effects of non-parabolicity on electron confinement. By combining results of magneto-optical and magneto-transport measurements, the conduction and valence band offsets in InSb/AlInSb heterojunctions will also be addressed. The freedom to change quantum well width, barrier composition, and strain will be employed to study mechanisms of spin splitting. Because of the low disorder anticipated in these materials combinations there is expected to be an unusual opportunity to explore the possibility of electron correlation effects in narrow-gap semiconductors. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced electronic, photonic and magnetic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fund amentally and technologically significant area. ***

9624699 Santos该研究项目旨在推进INSB/Alinsb Heteroepitaxy的材料科学，并探索限制在INSB量子井中的二维电子系统的性质。 预计在低温下，INSB-微小能量差距，高固有电子迁移率，小型电子迁移率，小型电子迁移率，大的G因素和非降解性传导带 - 在低温下，电子在INSB量子孔中具有新颖的磁光学和磁通量。 将追求完全紧张的异质结构在INSB底物上的MBE增长，并优化了优化的生长条件，以获得比GAAS底物获得的更高的晶体质量；还将研究生长条件以实现高质量的INSB/ALINSB异质结构。 远红外激光光谱法将用于评估非降解性对电子限制的影响。 通过结合磁光和磁通型传输测量的结果，还将解决INSB/ALINSB异质结中的传导和价带偏移。 改变量子井宽度，屏障组成和应变的自由将用于研究自旋分裂的机制。 由于这些材料组合中预期的疾病较低，预计将有一个异常的机会来探索狭窄的差距半导体中电子相关效应的可能性。 %% %%这项研究将在技术，光子和磁性设备以及集成电路的几个方面的基本水平上为基本材料科学知识提供贡献。 此外，该研究项目所获得的知识和理解有望通过提供基本的理解以及设计和生产改进的材料的基础来以一般的方式提高高级设备和电路的性能。 该计划的一个重要特征是通过培训学生在基金和技术意义上的领域中培训研究和教育。 ***