MRI: Acquisition of a Molecular Beam Epitaxy Chamber for Quantum-Engineered Structures and Devices
MRI:获取用于量子工程结构和器件的分子束外延室
基本信息
- 批准号:1229678
- 负责人:
- 金额:$ 81.3万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-09-01 至 2016-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This award to the University of Oklahoma is for the acquisition of a state-of-the-art molecular beam epitaxy chamber to accelerate progress in developing a wide range of scientific and technologically important applications for materials containing antimony (Sb). Antimonide materials typically display a relatively narrow band gap, small effective electronic mass, and strong spin-orbit coupling. Interband cascade structures based on the type-II transition between InAs and GaSb quantum wells will be further developed for applications as mid-infrared lasers, photodetectors, and thermophotovoltaic devices. Quantum-dot structures with antimonide compounds as the material for either the dots or the matrix are candidates for solar cells that exploit intermediate band absorption or multi-exciton generation. Exploitation of strong-spin orbit coupling and confinement effects may lead to a new three-dimensional topological insulator in quantum-confined Sb films. Improved InSb quantum-well structures will facilitate further studies of electron spin effects and may enable formation of novel topological superconductor states. The effects of dilute amounts of nitrogen in narrow gap materials will be studied for photovoltaic and photodetector applications. The molecular beam epitaxy chamber will be used for the training of students in contemporary growth techniques and will create new research opportunities for students studying physics and engineering. Nanotechnology outreach to K-12 students, middle and high school teachers, undergraduates, and senior citizens will be enriched by the enhanced expertise that will result from the acquisition of a new chamber for antimonide growth.
授予俄克拉荷马大学的这一奖项是为了表彰其购买了最先进的分子束外延室,以加快开发含锑材料(Sb)的广泛科学和技术重要应用方面的进展。锑化物材料通常表现出相对较窄的带隙、较小的有效电子质量和较强的自旋-轨道耦合。基于InAs和GaSb量子阱之间的第二类跃迁的带间级联结构将被进一步开发用于中红外激光器、光电探测器和热光电器件。以锑化合物作为点或基质材料的量子点结构是利用中间能带吸收或多激子产生的太阳能电池的候选材料。利用强自旋轨道耦合和限制效应,可以在量子限制的Sb薄膜中形成一种新的三维拓扑绝缘体。改进的InSb量子阱结构将有助于进一步研究电子自旋效应,并可能形成新的拓扑超导态。我们将研究窄禁带材料中的稀氮量对光伏和光电探测器应用的影响。分子束外延室将用于培训学生的当代生长技术,并将为学习物理和工程的学生创造新的研究机会。纳米技术对K-12学生、初中和高中教师、本科生和老年人的推广将因收购一个新的锑生长试验室而获得增强的专业知识而得到丰富。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Michael Santos其他文献
Disease Control Priorities, Third Edition (Volume 6): Major Infectious Diseases
疾病控制重点,第三版(第 6 卷):主要传染病
- DOI:
- 发表时间:
2017 - 期刊:
- 影响因子:0
- 作者:
K. Holmes;S. Bertozzi;B. Bloom;P. Jha;H. Gelband;L. Demaria;S. Horton;K. Danforth;R. Granich;Danielle Wiedeman;Sanjiv M. Baxi;N. Padian;C. Casper;H. Crane;M. Menon;D. Money;Katherine Harripersaud;M. McNairy;Saeed Ahmed;E. Abrams;H. Thirumurthy;W. El;C. Holmes;T. Hallett;R. Walensky;T. Barnighausen;G. John;R. Peeling;C. Levin;P. Garcia;D. Mabey;J. Kinuthia;G. Garnett;S. Krishnaratne;K. Harris;Michael Santos;J. Enstone;B. Hensen;G. Dallabetta;P. Revill;S. Gregson;J. Hargreaves;D. Wilson;J. Taaffe;J. Kahn;L. Bollinger;J. Stover;E. Marseille;H. Chesson;P. Mayaud;S. Aral;R. Atun;T. Cohen;C. Dye;H. Fraser;G. Gomez;G. Knight;M. Murray;E. Nardell;E. Rubin;J. Salomon;A. Vassall;G. Volchenkov;R. White;D. Wilson;Prashant Yadav;R. Shretta;Jenny X. Liu;Chris Cotter;Justin M. Cohen;Charlotte Dolenz;K. Makomva;Gretchen Newby;D. Ménard;Allison A. Phillips;Allison Tatarsky;R. Gosling;R. Feachem;F. Tediosi;C. Lengeler;M. Castro;Tim Wells;M. Tanner;J. Crump;P. Newton;Sarah J. Baird;Y. Lubell;J. Babigumira;L. Garrison;S. Wiktor;C. Fitzpatrick;U. Nwankwo;E. Lenk;S. J. Vlas;D. Bundy;M. Miller;Suraj Pant;R. Laxminarayan - 通讯作者:
R. Laxminarayan
Doing Prison Research: Views From Inside
进行监狱研究:内部观点
- DOI:
- 发表时间:
2005 - 期刊:
- 影响因子:0
- 作者:
M. Bosworth;D. Campbell;Bonita Demby;Seth M. Ferranti;Michael Santos - 通讯作者:
Michael Santos
Cost-Effectiveness of Interventions to Prevent HIV Acquisition
预防艾滋病毒感染干预措施的成本效益
- DOI:
10.1596/978-1-4648-0524-0/ch7 - 发表时间:
2017 - 期刊:
- 影响因子:7.7
- 作者:
G. Garnett;S. Krishnaratne;K. Harris;T. Hallett;Michael Santos;J. Enstone;B. Hensen;G. Dallabetta;P. Revill;S. Gregson;J. Hargreaves - 通讯作者:
J. Hargreaves
Best Practices for Building Trust in Virtual Business Negotiations
在虚拟商务谈判中建立信任的最佳实践
- DOI:
10.37745/bjmas.2022.0450 - 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Michael Santos;Murillo Dias - 通讯作者:
Murillo Dias
Drug Delivery and Medical Applications of Chemically Modified Hyaluronan
化学修饰透明质酸的药物输送和医疗应用
- DOI:
- 发表时间:
2008 - 期刊:
- 影响因子:0
- 作者:
L. Avila;D. Gianolio;P. Konowicz;M. Philbrook;Michael Santos;Robert J. Miller - 通讯作者:
Robert J. Miller
Michael Santos的其他文献
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{{ truncateString('Michael Santos', 18)}}的其他基金
Conference: Support for Student Participation at the 16th International Conference on Mid-infrared Optoelectronics: Materials and Devices
会议:支持学生参加第十六届中红外光电子学:材料与器件国际会议
- 批准号:
2310806 - 财政年份:2023
- 资助金额:
$ 81.3万 - 项目类别:
Standard Grant
Topological and Spin Transport Experiments in Narrow Bandgap Materials
窄带隙材料的拓扑和自旋输运实验
- 批准号:
1207537 - 财政年份:2012
- 资助金额:
$ 81.3万 - 项目类别:
Continuing Grant
InSb-Based Electron and Hole Systems for Charge and Spin Transport Experiments
用于电荷和自旋输运实验的 InSb 基电子和空穴系统
- 批准号:
0808086 - 财政年份:2008
- 资助金额:
$ 81.3万 - 项目类别:
Continuing Grant
InSb Heterostructures for Spin and Quantum Electronic Experiments
用于自旋和量子电子实验的 InSb 异质结构
- 批准号:
0510056 - 财政年份:2005
- 资助金额:
$ 81.3万 - 项目类别:
Continuing Grant
IMR: Acquisition of Fourier Transform Infrared Spectrometer for Research and Education on Spintronics and Semiconductor Nanostructures
IMR:收购傅里叶变换红外光谱仪,用于自旋电子学和半导体纳米结构的研究和教育
- 批准号:
0415161 - 财政年份:2004
- 资助金额:
$ 81.3万 - 项目类别:
Standard Grant
The Earliest Generations of Stars and Galaxies in the Universe
宇宙中最早一代的恒星和星系
- 批准号:
0302148 - 财政年份:2003
- 资助金额:
$ 81.3万 - 项目类别:
Standard Grant
Spin and Other Electronic Properties of InSb Quantum Wells
InSb 量子阱的自旋和其他电子特性
- 批准号:
0209371 - 财政年份:2002
- 资助金额:
$ 81.3万 - 项目类别:
Continuing Grant
Electronic Properties of Strained Narrow-Gap Quantum Wells
应变窄带隙量子阱的电子特性
- 批准号:
9973167 - 财政年份:1999
- 资助金额:
$ 81.3万 - 项目类别:
Continuing Grant
CAREER: Electronic Device Applications for InSb-Based Heterostructures
职业:InSb 基异质结构的电子器件应用
- 批准号:
9733966 - 财政年份:1998
- 资助金额:
$ 81.3万 - 项目类别:
Standard Grant
Electronic Properties and Growth of Novel InSb Based Quantum Wells
新型InSb基量子阱的电子特性和生长
- 批准号:
9624699 - 财政年份:1996
- 资助金额:
$ 81.3万 - 项目类别:
Continuing Grant
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