CAREER: Electronic Device Applications for InSb-Based Heterostructures

职业：InSb 基异质结构的电子器件应用

• 批准号: 9733966
• 负责人: Michael Santos
• 金额: $ 25万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-04-15 至 2003-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9733966&HistoricalAwards=false
• 关键词: CAREER; Electronic; Device; Applications; InSb

Program: Physical Foundations of Enabling Technologies CAREER Competition Proposal Number: ECS-9733966 Principle Investigator: Michael Santos Title: CAREER: Electronic Device Applications for InSb-Based Heterostructures. Abstract The proposed work is related to the development of three devices that exploit the high intrinsic mobility attribute of AlInSb and InSb heterostructures and quantum wells. The devices under investigation include magnetic field sensors, field-effect transistors with high-speed and low power dissipation, and spin-polarized FETs. The educational component of the proposed work is related to the PIs involvement in an Engineering Physics students program and to the support of a number of senior projects in the area of device fabrication and characterization. It is believed that if successful, the PI will make a significant contribution in the area of advanced materials and device research. His partnership with GM was also noted and his strong commitment to educational activities was appreciated. This is a well written proposal and presents a well designed research and educational program. High risk areas were addressed with innovative possible solutions and to this end it is felt that this proposal is worthy of funding. Based on the written evaluations and the panel discussion, this proposal is recommended for a CAREER award at $200,000 for 48 months. The PI has submitted a revised budget without substantial change in the scope of the work. February 20, 1998

项目名称：使能技术的物理基础 职业竞争 提案编号：ECS-9733966 主要研究者：Michael桑托斯 标题：职业：InSb基异质结构的电子器件应用。 摘要 所提出的工作是利用高本征迁移率属性的AlInSb和InSb异质结构和量子威尔斯的三个设备的发展。正在研究的器件包括磁场传感器、具有高速和低功耗的场效应晶体管以及自旋极化FET。拟议工作的教育部分涉及到PI参与工程物理学生计划，并在设备制造和表征领域的一些高级项目的支持。 相信如果成功，PI将在先进材料和器件研究领域做出重大贡献。 他与全球机制的伙伴关系也得到了注意，他对教育活动的坚定承诺也得到了赞赏。 这是一个写得很好的建议，并提出了一个精心设计的研究和教育计划。 对高风险领域采取了创新的可能解决办法，为此，人们认为这项建议值得供资。 根据书面评估和小组讨论，建议将本提案作为48个月的200，000美元职业奖。PI提交了一份修订预算，但工作范围没有实质性变化。 一九九八年二月二十日