CAREER: Electronic Device Applications for InSb-Based Heterostructures

计划：使能技术的物理基础职业竞赛提案编号：ECS-9733966主要调查者：迈克尔·桑托斯标题：职业：基于InSb异质结构的电子器件应用。摘要所提出的工作是关于开发三种利用AlInSb和InSb异质结和量子阱的高本征迁移率属性的器件。正在研究的器件包括磁场传感器、高速低功耗的场效应管和自旋极化FET。拟议工作的教育部分与PIS参与工程物理学生方案有关，并与支持设备制造和表征领域的一些高级项目有关。相信如果成功，PI将在先进材料和器件研究领域做出重大贡献。还注意到他与全球机制的伙伴关系，并赞赏他对教育活动的坚定承诺。这是一份写得很好的提案，也是一份精心设计的研究和教育计划。以创新的可能解决办法处理了高风险领域，为此目的，人们认为这项提议值得资助。根据书面评价和小组讨论，建议将这一提议作为为期48个月的200 000美元职业奖励。和平倡议提交了修订后的预算，但工作范围没有实质性变化。一九九八年二月二十日

Program: Physical Foundations of Enabling Technologies CAREER Competition Proposal Number: ECS-9733966 Principle Investigator: Michael Santos Title: CAREER: Electronic Device Applications for InSb-Based Heterostructures. Abstract The proposed work is related to the development of three devices that exploit the high intrinsic mobility attribute of AlInSb and InSb heterostructures and quantum wells. The devices under investigation include magnetic field sensors, field-effect transistors with high-speed and low power dissipation, and spin-polarized FETs. The educational component of the proposed work is related to the PIs involvement in an Engineering Physics students program and to the support of a number of senior projects in the area of device fabrication and characterization. It is believed that if successful, the PI will make a significant contribution in the area of advanced materials and device research. His partnership with GM was also noted and his strong commitment to educational activities was appreciated. This is a well written proposal and presents a well designed research and educational program. High risk areas were addressed with innovative possible solutions and to this end it is felt that this proposal is worthy of funding. Based on the written evaluations and the panel discussion, this proposal is recommended for a CAREER award at $200,000 for 48 months. The PI has submitted a revised budget without substantial change in the scope of the work. February 20, 1998