CAREER: Electronic Device Applications for InSb-Based Heterostructures

项目：使能技术物理基础职业竞赛提案号：ECS-9733966主要研究者：Michael Santos题目：职业：insb基异质结构电子器件应用。摘要：本文的工作涉及到利用AlInSb和InSb异质结构和量子阱的高固有迁移率属性的三种器件的开发。正在研究的器件包括磁场传感器、具有高速和低功耗的场效应晶体管以及自旋极化场效应管。拟议工作的教育部分与pi参与工程物理学生计划有关，并支持许多器件制造和表征领域的高级项目。如果成功，PI将在先进材料和器件研究领域做出重大贡献。会议还注意到他与通用汽车的伙伴关系，并赞赏他对教育活动的坚定承诺。这是一份写得很好的提案，提出了一个设计良好的研究和教育计划。高风险领域采用了创新的可能解决办法，为此目的，人们认为这项建议值得资助。根据书面评估和小组讨论，建议该提案获得职业生涯奖，奖金为20万美元，为期48个月。PI提交了一份订正预算，但工作范围没有实质性变化。一九九八年二月二十日

Program: Physical Foundations of Enabling Technologies CAREER Competition Proposal Number: ECS-9733966 Principle Investigator: Michael Santos Title: CAREER: Electronic Device Applications for InSb-Based Heterostructures. Abstract The proposed work is related to the development of three devices that exploit the high intrinsic mobility attribute of AlInSb and InSb heterostructures and quantum wells. The devices under investigation include magnetic field sensors, field-effect transistors with high-speed and low power dissipation, and spin-polarized FETs. The educational component of the proposed work is related to the PIs involvement in an Engineering Physics students program and to the support of a number of senior projects in the area of device fabrication and characterization. It is believed that if successful, the PI will make a significant contribution in the area of advanced materials and device research. His partnership with GM was also noted and his strong commitment to educational activities was appreciated. This is a well written proposal and presents a well designed research and educational program. High risk areas were addressed with innovative possible solutions and to this end it is felt that this proposal is worthy of funding. Based on the written evaluations and the panel discussion, this proposal is recommended for a CAREER award at $200,000 for 48 months. The PI has submitted a revised budget without substantial change in the scope of the work. February 20, 1998