CAREER: Electronic Device Applications for InSb-Based Heterostructures

职业：InSb 基异质结构的电子器件应用

• 批准号: 9733966
• 负责人: Michael Santos
• 金额: $ 25万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-04-15 至 2003-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9733966&HistoricalAwards=false
• 关键词: CAREER; Electronic; Device; Applications; InSb

Program: Physical Foundations of Enabling Technologies CAREER Competition Proposal Number: ECS-9733966 Principle Investigator: Michael Santos Title: CAREER: Electronic Device Applications for InSb-Based Heterostructures. Abstract The proposed work is related to the development of three devices that exploit the high intrinsic mobility attribute of AlInSb and InSb heterostructures and quantum wells. The devices under investigation include magnetic field sensors, field-effect transistors with high-speed and low power dissipation, and spin-polarized FETs. The educational component of the proposed work is related to the PIs involvement in an Engineering Physics students program and to the support of a number of senior projects in the area of device fabrication and characterization. It is believed that if successful, the PI will make a significant contribution in the area of advanced materials and device research. His partnership with GM was also noted and his strong commitment to educational activities was appreciated. This is a well written proposal and presents a well designed research and educational program. High risk areas were addressed with innovative possible solutions and to this end it is felt that this proposal is worthy of funding. Based on the written evaluations and the panel discussion, this proposal is recommended for a CAREER award at $200,000 for 48 months. The PI has submitted a revised budget without substantial change in the scope of the work. February 20, 1998

计划：启用技术的物理基础职业竞赛提案编号：ECS-9733966主要调查员：Michael Santos标题：职业：基于INSB的异质结构的电子设备应用。 摘要拟议的工作与三种设备的开发有关，这些设备利用了Alinsb和Insb异质结构和量子井的高内在迁移率属性。所研究的设备包括磁场传感器，具有高速和低功率耗散的场效应晶体管以及自旋偏振FET。拟议工作的教育部分与PIS参与工程学学生计划的参与以及在设备制造和表征领域的许多高级项目的支持。 据信，如果成功，PI将在高级材料和设备研究领域做出重大贡献。 还指出了他与通用汽车的合作关系，他对教育活动的坚定承诺受到赞赏。 这是一个书面良好的建议，并提出了一个精心设计的研究和教育计划。 通过创新的解决方案来解决高风险领域，为此，人们认为该提议值得提供资金。 根据书面评估和小组讨论，建议该提案以200,000美元的价格颁发48个月的职业奖。 PI已提交了修订预算，没有工作范围进行实质性变化。 1998年2月20日