CAREER: Electronic Device Applications for InSb-Based Heterostructures
CAREER: Electronic Device Applications for InSb-Based Heterostructures
批准号:
9733966
负责人:
Michael Santos
金额:
$25.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-15 至 2003-09-30
中文摘要
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英文摘要
Program: Physical Foundations of Enabling Technologies CAREER Competition Proposal Number: ECS-9733966 Principle Investigator: Michael Santos Title: CAREER: Electronic Device Applications for InSb-Based Heterostructures. Abstract The proposed work is related to the development of three devices that exploit the high intrinsic mobility attribute of AlInSb and InSb heterostructures and quantum wells. The devices under investigation include magnetic field sensors, field-effect transistors with high-speed and low power dissipation, and spin-polarized FETs. The educational component of the proposed work is related to the PIs involvement in an Engineering Physics students program and to the support of a number of senior projects in the area of device fabrication and characterization. It is believed that if successful, the PI will make a significant contribution in the area of advanced materials and device research. His partnership with GM was also noted and his strong commitment to educational activities was appreciated. This is a well written proposal and presents a well designed research and educational program. High risk areas were addressed with innovative possible solutions and to this end it is felt that this proposal is worthy of funding. Based on the written evaluations and the panel discussion, this proposal is recommended for a CAREER award at $200,000 for 48 months. The PI has submitted a revised budget without substantial change in the scope of the work. February 20, 1998
期刊论文(0)
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会议论文
Conference: Support for Student Participation at the 16th International Conference on Mid-infrared Optoelectronics: Materials and Devices
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批准号:2310806
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:2023
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负责人:Michael Santos
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依托单位:
Topological and Spin Transport Experiments in Narrow Bandgap Materials
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批准号:1207537
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项目类别:Continuing Grant
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资助金额:$51.0万
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财政年份:2012
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负责人:Michael Santos
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依托单位:
MRI: Acquisition of a Molecular Beam Epitaxy Chamber for Quantum-Engineered Structures and Devices
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批准号:1229678
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项目类别:Standard Grant
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资助金额:$81.3万
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财政年份:2012
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负责人:Michael Santos
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依托单位:
InSb-Based Electron and Hole Systems for Charge and Spin Transport Experiments
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批准号:0808086
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项目类别:Continuing Grant
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资助金额:$49.52万
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财政年份:2008
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负责人:Michael Santos
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依托单位:
InSb Heterostructures for Spin and Quantum Electronic Experiments
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批准号:0510056
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Michael Santos
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依托单位:
IMR: Acquisition of Fourier Transform Infrared Spectrometer for Research and Education on Spintronics and Semiconductor Nanostructures
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批准号:0415161
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项目类别:Standard Grant
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资助金额:$9.1万
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财政年份:2004
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负责人:Michael Santos
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依托单位:
The Earliest Generations of Stars and Galaxies in the Universe
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批准号:0302148
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项目类别:Standard Grant
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资助金额:$13.93万
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财政年份:2003
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负责人:Michael Santos
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依托单位:
Spin and Other Electronic Properties of InSb Quantum Wells
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批准号:0209371
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项目类别:Continuing Grant
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资助金额:$43.5万
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财政年份:2002
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负责人:Michael Santos
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依托单位:
Electronic Properties of Strained Narrow-Gap Quantum Wells
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批准号:9973167
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项目类别:Continuing Grant
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资助金额:$35.0万
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财政年份:1999
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负责人:Michael Santos
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依托单位:
Electronic Properties and Growth of Novel InSb Based Quantum Wells
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批准号:9624699
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项目类别:Continuing Grant
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资助金额:$31.0万
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财政年份:1996
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负责人:Michael Santos
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依托单位:
RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb
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批准号:9410015
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1994
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负责人:Michael Santos
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依托单位:
海外基金