InSb-Based Electron and Hole Systems for Charge and Spin Transport Experiments

用于电荷和自旋输运实验的 InSb 基电子和空穴系统

• 批准号: 0808086
• 负责人: Michael Santos
• 金额: $ 49.52万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-07-01 至 2012-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0808086&HistoricalAwards=false
• 关键词: InSb; Based; Electron; Hole; Systems

Technical: This project is to study the growth of semiconductor quantum wells made of indium antimonide (InSb) and to study charge and spin transport phenomena that are enabled by these materials. It attempts to address the needs of future computer technologies by focusing on InSb materials, which possess high carrier mobilities, small effective masses, and large spin-orbit effects. Such attributes imply higher operating speeds for field-effect transistors, higher operating temperatures for ballistic transport devices, and the opportunity for spintronic devices that could provide new routes for computation and data storage. Both n-type and p-type quantum wells with high carrier mobilities are required for transistors in logic applications. The electrical properties of the proposed metamorphic heterostructures, on GaAs and Si substrates, will be optimized in this project through defect filtering by interlayers and judicious design of strain-balanced barrier and well layers. Maximum strain is particularly important for p-type quantum wells, where a small effective mass, and consequently a high mobility, relies on the degree to which degeneracy is lifted in the valence bands. Magneto-optics experiments are designed to characterize the effects of strain and confinement on the effective mass of holes in InSb. The optimization of the growth of quantum wells will make possible studies of strong spin-orbit coupling effects via weak anti-localization experiments, carrier focusing devices, and spin interferometers.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance, and is expected to provide new scientific understanding of spin-orbit coupling of not only InSb, but zinc blende semiconductors in general. The research group at the University of Oklahoma is one of the only two groups worldwide who are able to grow high-quality InSb heterostructures needed by many scientists in studying fundamental physics and materials science. This project will also contribute to the preparation of students, including members of underrepresented groups, for employment in areas of technological importance.

技术：该项目是研究由抑制剂（INSB）制成的半导体量子井的生长，并研究这些材料实现的电荷和自旋传输现象。它试图通过专注于具有高载体迁移率，小有效质量和较大旋转轨道效应的INSB材料来解决未来计算机技术的需求。这些属性意味着较高的现场效应晶体管工作速度，弹道传输设备的较高工作温度以及可以为计算和数据存储提供新途径的自旋设备的机会。逻辑应用中的晶体管需要具有高载体迁移率的N型和P型量子井。在GAA和SI底物上提出的变质异质结构的电气特性将通过中间层和明智的应变平衡的屏障和井层设计通过缺陷过滤来优化该项目。最大应变对于P型量子井特别重要，在P型量子井中，小质量较小的质量以及高迁移率依赖于价带中解脱的​​程度。磁磁实验旨在表征应变和限制对INSB孔有效质量的影响。 The optimization of the growth of quantum wells will make possible studies of strong spin-orbit coupling effects via weak anti-localization experiments, carrier focusing devices, and spin interferometers.Non-technical: The project addresses basic research issues in a topical area of​​ materials science with high technological relevance, and is expected to provide new scientific understanding of spin-orbit coupling of not only InSb, but zinc blende semiconductors in 一般的。俄克拉荷马大学的研究小组是全球仅有的两个小组之一，他们能够在研究基本物理学和材料科学方面需要许多科学家所需的高质量INSB异质结构。该项目还将有助于学生的准备，包括代表性不足的群体成员在技术重要领域的就业。