Topological and Spin Transport Experiments in Narrow Bandgap Materials
Topological and Spin Transport Experiments in Narrow Bandgap Materials
批准号:
1207537
负责人:
Michael Santos
金额:
$51.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-07-01 至 2016-06-30
中文摘要
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英文摘要
****Technical Abstract****Theoretical progress on topological insulators has flourished, while experimental work has made more modest progress due to the general lack of high quality crystals in which surface states dominate the conductivity. This project is a broad effort to grow Sb-based semiconductors by molecular beam epitaxy for topological and spin studies. The project will develop quantum confined Sb as a new 3D topological insulator; advance the growth of InAs/GaSb composite quantum wells for 2D topological insulator studies; explore topological superconductors based on InSb quantum wires and wells in proximity to a superconductor; and study spin interference and gate-control of spin-orbit coupling. In addition to the role Sb-based materials may play in fundamental physics, their high electron mobility and small bandgaps are of interest for electronic and photonic device applications. Because the project focuses on crystal growth, it will contribute to the preparation of students for employment in areas of technological importance. The group has an established record of mentoring female students and will continue to encourage K-12 students to explore careers in science and engineering via their outreach activities and efforts to promote greater diversity in STEM.****Non-Technical Abstract****Historically, materials growth has been of profound importance for both fundamental condensed matter physics and technological advancement. Theoretical progress on topological insulators, a recently discovered class of materials with unparalleled properties, has flourished. Experimental work, however, has made more modest strides due to the scarcity of high quality materials for conductivity and related transport experiments. This project addresses the experimental limitation with a broad effort on the growth of Sb-based semiconductors for topological and spin studies. In addition to the role Sb-based materials may play in fundamental physics, their high electron mobility and small bandgaps are of interest for device applications. The materials studied in this project will address issues relevant to both fundamental and applied science. Because the project focuses on crystal growth, it will contribute to the preparation of students for employment in areas of technological importance. The group has an established record of mentoring female graduate students and will continue to encourage younger students to explore careers in science and engineering via their outreach activities and other efforts to promote greater diversity in science.
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Conference: Support for Student Participation at the 16th International Conference on Mid-infrared Optoelectronics: Materials and Devices
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批准号:2310806
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:2023
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负责人:Michael Santos
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依托单位:
MRI: Acquisition of a Molecular Beam Epitaxy Chamber for Quantum-Engineered Structures and Devices
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批准号:1229678
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项目类别:Standard Grant
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资助金额:$81.3万
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财政年份:2012
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负责人:Michael Santos
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依托单位:
InSb-Based Electron and Hole Systems for Charge and Spin Transport Experiments
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批准号:0808086
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项目类别:Continuing Grant
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资助金额:$49.52万
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财政年份:2008
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负责人:Michael Santos
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依托单位:
InSb Heterostructures for Spin and Quantum Electronic Experiments
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批准号:0510056
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Michael Santos
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依托单位:
IMR: Acquisition of Fourier Transform Infrared Spectrometer for Research and Education on Spintronics and Semiconductor Nanostructures
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批准号:0415161
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项目类别:Standard Grant
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资助金额:$9.1万
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财政年份:2004
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负责人:Michael Santos
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依托单位:
The Earliest Generations of Stars and Galaxies in the Universe
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批准号:0302148
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项目类别:Standard Grant
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资助金额:$13.93万
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财政年份:2003
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负责人:Michael Santos
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依托单位:
Spin and Other Electronic Properties of InSb Quantum Wells
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批准号:0209371
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项目类别:Continuing Grant
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资助金额:$43.5万
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财政年份:2002
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负责人:Michael Santos
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依托单位:
Electronic Properties of Strained Narrow-Gap Quantum Wells
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批准号:9973167
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项目类别:Continuing Grant
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资助金额:$35.0万
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财政年份:1999
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负责人:Michael Santos
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依托单位:
CAREER: Electronic Device Applications for InSb-Based Heterostructures
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批准号:9733966
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:1998
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负责人:Michael Santos
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依托单位:
Electronic Properties and Growth of Novel InSb Based Quantum Wells
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批准号:9624699
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项目类别:Continuing Grant
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资助金额:$31.0万
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财政年份:1996
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负责人:Michael Santos
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依托单位:
RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb
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批准号:9410015
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1994
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负责人:Michael Santos
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依托单位:
国内基金
海外基金
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