Topological and Spin Transport Experiments in Narrow Bandgap Materials

窄带隙材料的拓扑和自旋输运实验

• 批准号: 1207537
• 负责人: Michael Santos
• 金额: $ 51万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2016-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1207537&HistoricalAwards=false
• 关键词: Topological; Spin; Transport; Experiments; Narrow

****Technical Abstract****Theoretical progress on topological insulators has flourished, while experimental work has made more modest progress due to the general lack of high quality crystals in which surface states dominate the conductivity. This project is a broad effort to grow Sb-based semiconductors by molecular beam epitaxy for topological and spin studies. The project will develop quantum confined Sb as a new 3D topological insulator; advance the growth of InAs/GaSb composite quantum wells for 2D topological insulator studies; explore topological superconductors based on InSb quantum wires and wells in proximity to a superconductor; and study spin interference and gate-control of spin-orbit coupling. In addition to the role Sb-based materials may play in fundamental physics, their high electron mobility and small bandgaps are of interest for electronic and photonic device applications. Because the project focuses on crystal growth, it will contribute to the preparation of students for employment in areas of technological importance. The group has an established record of mentoring female students and will continue to encourage K-12 students to explore careers in science and engineering via their outreach activities and efforts to promote greater diversity in STEM.****Non-Technical Abstract****Historically, materials growth has been of profound importance for both fundamental condensed matter physics and technological advancement. Theoretical progress on topological insulators, a recently discovered class of materials with unparalleled properties, has flourished. Experimental work, however, has made more modest strides due to the scarcity of high quality materials for conductivity and related transport experiments. This project addresses the experimental limitation with a broad effort on the growth of Sb-based semiconductors for topological and spin studies. In addition to the role Sb-based materials may play in fundamental physics, their high electron mobility and small bandgaps are of interest for device applications. The materials studied in this project will address issues relevant to both fundamental and applied science. Because the project focuses on crystal growth, it will contribute to the preparation of students for employment in areas of technological importance. The group has an established record of mentoring female graduate students and will continue to encourage younger students to explore careers in science and engineering via their outreach activities and other efforts to promote greater diversity in science.

****技术摘要****拓扑绝缘子的理论进步蓬勃发展，而实验性工作则取得了更大的进步，这是由于一般缺乏高质量的晶体，表面状态主导了电导率。该项目是通过分子束外延和自旋研究来增强基于SB的半导体的广泛努力。该项目将开发量子限制为新的3D拓扑绝缘子。推进INAS/GASB复合量子井的生长，用于2D拓扑绝缘体研究；探索基于INSB量子线和井的拓扑超导体，以靠近超导体；并研究自旋轨道耦合的自旋干扰和栅极对照。除了基于SB的材料在基本物理学中可以发挥作用外，它们的高电子迁移率和小带镜头对电子和光子设备的应用也很感兴趣。由于该项目着重于晶体增长，因此它将有助于学生在技术重要性领域的就业。该小组拥有指导女学生的既定记录，并将继续鼓励K-12学生通过外展活动和促进STEM的更大多样性的努力来探索科学和工程学的职业。拓扑绝缘子的理论进步是一种最近发现的具有无与伦比性能的材料类，已经蓬勃发展。然而，由于高质量的电导率和相关运输实验的高质量材料的稀缺，实验工作取得了更大的进步。该项目通过在基于SB的半导体和自旋研究的基于SB的半导体增长方面解决了实验限制。除了基于SB的材料在基本物理学中的作用外，它们的高电子迁移率和小带镜头对设备应用感兴趣。该项目中研究的材料将解决与基本科学和应用科学相关的问题。由于该项目着重于晶体增长，因此它将有助于学生在技术重要性领域的就业。该小组拥有指导女研究生的既定记录，并将继续鼓励年轻的学生通过其外展活动以及其他促进科学上更加多样性的努力来探索科学和工程学的职业。