Electronic Structure of Semiconductor and Main Group Cluster

半导体电子结构及主族簇

基本信息

  • 批准号:
    9417459
  • 负责人:
  • 金额:
    $ 13.9万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    1995
  • 资助国家:
    美国
  • 起止时间:
    1995-02-15 至 1998-01-31
  • 项目状态:
    已结题

项目摘要

Professor Krishnan Balasubramanian at the Department of Chemistry and Biochemistry, Arizona State University, is supported by a grant from the Theoretical and Computational Chemistry Program at NSF for theoretical studies of the electronic structure of molecules and small clusters. Accurate ab initio wavefunctions are being obtained for several systems, all of which contain semi-conductor or other main group elements. The systems being studied fall into three groups: (1) Mixed III-V, IV-V, and II-VI clusters with up to 9 atoms. (2) Pure clusters with up to 8 atoms formed from group III, IV, and V elements. And, (3) hydrides and halides of group III and V elements. In this work relativistic effects are explicitly treated because they are needed in order to be able to obtain accurate energetic and geometric properties when the systems studied contain heavy atoms. Examples of heavy atoms treated in this work are gallium, indium, lead, and selenium. Relativistic effective core potentials are used to represent the electrons in the atomic cores in order to make calculations of the wavefunctions tractable, especially for the larger clusters. In order to obtain the required accuracy, relativistic complete active space self-consistent field wavefunctions are further correlated using multi-reference configuration interaction and relativistic configuration interaction methods. The work under this grant is directed toward resolving questions about a wide range of properties of semi-conductor and main group clusters containing heavy atoms. Clusters constitute a vital bridge between molecules and solids. However, they also exhibit interesting and technologically useful properties in their own right. In this project, the systems studied have relevance for semi-conductor processing and for chemical vapor deposition.
化学系的Krishnan Balasubramanian教授和 生物化学,亚利桑那州立大学,是由赠款的支持, 理论和计算化学计划在NSF的理论 研究分子和小团簇的电子结构。 精确的从头算波函数正在获得几个系统, 它们都含有半导体或其它主族元素。的 研究的系统分为三类:(1)混合III-V,IV-V, II-VI族原子团簇,最多9个原子。(2)最多8个原子的纯团簇 由III、IV和V族元素组成。(3)卤素和卤化物 第三和第五族元素。在这项工作中, 明确地对待,因为他们是需要的,以便能够获得 研究系统时准确的能量和几何性质 含有重原子。在这项工作中处理的重原子的例子是 镓、铟、铅和硒。相对论有效原子实 势被用来表示原子核中的电子, 为了使波函数的计算易于处理,特别是对于 更大的集群。为了获得所需的精度, 相对论完全活动空间自洽场波函数 使用多参考配置相互作用进一步关联 和相对论组态相互作用方法。 这项补助金下的工作是针对解决问题, 半导体和主族团簇的广泛性质 含有重原子。集群构成了一个重要的桥梁, 分子和固体。然而,他们也表现出有趣的, 技术上有用的特性。在本项目中, 所研究的系统与半导体加工和 化学气相沉积

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
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Krishnan Balasubramanian其他文献

Engineered Graphene Grain Boundaries as Molecular Sieves for Water Desalination
工程石墨烯晶界作为海水淡化的分子筛
Computational combinatorics of hyperplane colorings of 6D-hypercube for all irreducible representations and applications
  • DOI:
    10.1007/s10910-019-01079-0
  • 发表时间:
    2019-11-23
  • 期刊:
  • 影响因子:
    2.000
  • 作者:
    Krishnan Balasubramanian
  • 通讯作者:
    Krishnan Balasubramanian
Distance-based topological indices of nanosheets, nanotubes and nanotori of $$\hbox {SiO}_2$$
  • DOI:
    10.1007/s10910-018-0956-8
  • 发表时间:
    2018-10-08
  • 期刊:
  • 影响因子:
    2.000
  • 作者:
    Micheal Arockiaraj;Sandi Klavžar;Shagufa Mushtaq;Krishnan Balasubramanian
  • 通讯作者:
    Krishnan Balasubramanian
Combinatorial S-function method for relativistic spinor states of 5g-row dimers: (E-121)2 to (E-137)2
  • DOI:
    10.1007/s10910-025-01715-y
  • 发表时间:
    2025-04-15
  • 期刊:
  • 影响因子:
    2.000
  • 作者:
    Krishnan Balasubramanian
  • 通讯作者:
    Krishnan Balasubramanian
Combinatorial enumeration of relativistic states of actinide dimers
  • DOI:
    10.1007/s10910-020-01196-1
  • 发表时间:
    2021-01-02
  • 期刊:
  • 影响因子:
    2.000
  • 作者:
    Krishnan Balasubramanian
  • 通讯作者:
    Krishnan Balasubramanian

Krishnan Balasubramanian的其他文献

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{{ truncateString('Krishnan Balasubramanian', 18)}}的其他基金

ARI-MA: Collaborative Research: An Experimental and Computational Study of Actinide Detection and Identification by Engineered Mesoporous Sensor Materials for Actinide Forensics
ARI-MA:合作研究:用于锕系元素取证的工程介孔传感器材料对锕系元素检测和识别的实验和计算研究
  • 批准号:
    0833344
  • 财政年份:
    2008
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Standard Grant
Electronic Structure of SemiConductor and Main Group Clusters and Compounds
半导体和主族团簇及化合物的电子结构
  • 批准号:
    0540251
  • 财政年份:
    2005
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Standard Grant
Electronic Structure of SemiConductor and Main Group Clusters and Compounds
半导体和主族团簇及化合物的电子结构
  • 批准号:
    0236434
  • 财政年份:
    2003
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Standard Grant
Electronic Structure of Semiconductor Clusters
半导体簇的电子结构
  • 批准号:
    0196031
  • 财政年份:
    2000
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Standard Grant
Electronic Structure of Semiconductor Clusters
半导体簇的电子结构
  • 批准号:
    9814056
  • 财政年份:
    1998
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Standard Grant
Electronic Structure of Semiconductor and Heavy Main Group Clusters
半导体和重主族团簇的电子结构
  • 批准号:
    9204999
  • 财政年份:
    1992
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Continuing Grant
Electronic Structure of Semiconductor and Heavy Main Group Clusters
半导体和重主族团簇的电子结构
  • 批准号:
    8818869
  • 财政年份:
    1989
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Continuing Grant
Theoretical Investigations of Spectroscopic Properties and Reactivities of Molecules Containing Heavy Atoms
含重原子分子的光谱性质和反应性的理论研究
  • 批准号:
    8520556
  • 财政年份:
    1986
  • 资助金额:
    $ 13.9万
  • 项目类别:
    Continuing Grant

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Understanding and control of structure and electronic state of thin film of highly ordered organic semiconductor molecule via photoelectron-imaging
通过光电子成像了解和控制高度有序有机半导体分子薄膜的结构和电子状态
  • 批准号:
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  • 财政年份:
    2022
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III-V semiconductor nanowires: correlation of local electronic structure, conductivity, and carrier lifetime
III-V族半导体纳米线:局部电子结构、电导率和载流子寿命的相关性
  • 批准号:
    390247238
  • 财政年份:
    2018
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    $ 13.9万
  • 项目类别:
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Developing Structure-Property Relationships for Electronic Structure and Dynamics at Organic Semiconductor Interfaces
建立有机半导体界面电子结构和动力学的结构-性能关系
  • 批准号:
    1565497
  • 财政年份:
    2016
  • 资助金额:
    $ 13.9万
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Structure and Electronic Gap State Density at Organic Semiconductor Interfaces
有机半导体界面的结构和电子能隙态密度
  • 批准号:
    283296803
  • 财政年份:
    2015
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通过调节有机半导体薄膜与导电基底界面的结构来控制其电子性能
  • 批准号:
    25410093
  • 财政年份:
    2013
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有机半导体薄膜界面处的未占据电子结构
  • 批准号:
    24350013
  • 财政年份:
    2012
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Perpendicular magnetic anisotropy enhanced by tuning electronic structure of organic-semiconductor/metallic-magnet interface
通过调整有机半导体/金属磁体界面的电子结构增强垂直磁各向异性
  • 批准号:
    24750120
  • 财政年份:
    2012
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Structure and Dynamics at Organic Semiconductor Interfaces: The Influence of Molecular Electronic Structure
有机半导体界面的结构和动力学:分子电子结构的影响
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    1213243
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有机半导体中的电子电荷传输取决于各向异性分子的农业结构
  • 批准号:
    23760278
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FOR 1282: Controlling the Electronic Structure of Semiconductor Nanoparticles by Doping and Hybrid Formation
FOR 1282:通过掺杂和混合形成控制半导体纳米粒子的电子结构
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