Role of Light Ion Impurities (Hydrogen, Oxygen, Carbon) in III-V Nitrides

本研究旨在研究二元（GaN， AIN, InN）、三元（InGaN, AlGaN, AlInN）和混合V族（GaAsN, InAsN, AlAsN, GaPN）氮化物中最常见的光离子杂质（H， O， C）的性质。这些材料在短波光发射器件和高温电子器件方面具有很强的潜力。关于外延生长薄膜中这些最常见杂质的能级、溶解度和扩散率的基础材料科学信息是缺乏的，这些信息将为进一步了解和利用III-N材料提供重要信息。正如在其他半导体中一样，氢、氧和碳将对氮化物的电学和光学性质产生强烈的影响。在这个项目中获得的知识将大大提高对外延生长氮化物中主要残留杂质影响的理解。这些薄膜可以广泛应用于可见光和近紫外激光器，用于更密集的光存储介质，以及汽车和其他高容量市场的电子产品，这些市场存在高温和腐蚀性环境。该计划的一个重要特点是培养学生在材料研究的一个基本的和技术上重要的领域。＊＊＊

9421109 Pearton This research aims to investigate the properties of the most common light ion impurities (H, O, C) in binary (GaN, AIN, InN), ternary (InGaN, AlGaN, AlInN) and mixed group V (GaAsN, InAsN, AlAsN, GaPN) nitrides. These materials have strong potential for short wavelength optical emitting devices and high temperature electronics. Basic materials science information regarding energy levels, solubility and diffusivity of these most common impurities in epitaxially-grown films is lacking, and will provide important information to further progress in the understanding and utilization of III-N materials. As in other semiconductors it is expected that H, O and C will have a strong effect on the electrical and optical properties of nitrides. %%% The knowledge gained during this project will significantly improve understanding of the effects of the dominant residual impurities in epitaxially grown nitrides. These thin films may find extensive application in visible and near-UV lasers for denser optical storage media and in electronics for automotive and other high volume markets where elevated temperatures and corrosive environments are present. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. ***