Role of Light Ion Impurities (Hydrogen, Oxygen, Carbon) in III-V Nitrides

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9421109 Pearton This research aims to investigate the properties of the most common light ion impurities (H, O, C) in binary (GaN, AIN, InN), ternary (InGaN, AlGaN, AlInN) and mixed group V (GaAsN, InAsN, AlAsN, GaPN) nitrides. These materials have strong potential for short wavelength optical emitting devices and high temperature electronics. Basic materials science information regarding energy levels, solubility and diffusivity of these most common impurities in epitaxially-grown films is lacking, and will provide important information to further progress in the understanding and utilization of III-N materials. As in other semiconductors it is expected that H, O and C will have a strong effect on the electrical and optical properties of nitrides. %%% The knowledge gained during this project will significantly improve understanding of the effects of the dominant residual impurities in epitaxially grown nitrides. These thin films may find extensive application in visible and near-UV lasers for denser optical storage media and in electronics for automotive and other high volume markets where elevated temperatures and corrosive environments are present. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. ***