Role of Light Ion Impurities (Hydrogen, Oxygen, Carbon) in III-V Nitrides

III-V 氮化物中轻离子杂质（氢、氧、碳）的作用

• 批准号: 9421109
• 负责人: Stephen Pearton
• 金额: --
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-04-01 至 1998-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9421109&HistoricalAwards=false
• 关键词: Role; Light; Ion; Impurities; Hydrogen

9421109 Pearton This research aims to investigate the properties of the most common light ion impurities (H, O, C) in binary (GaN, AIN, InN), ternary (InGaN, AlGaN, AlInN) and mixed group V (GaAsN, InAsN, AlAsN, GaPN) nitrides. These materials have strong potential for short wavelength optical emitting devices and high temperature electronics. Basic materials science information regarding energy levels, solubility and diffusivity of these most common impurities in epitaxially-grown films is lacking, and will provide important information to further progress in the understanding and utilization of III-N materials. As in other semiconductors it is expected that H, O and C will have a strong effect on the electrical and optical properties of nitrides. %%% The knowledge gained during this project will significantly improve understanding of the effects of the dominant residual impurities in epitaxially grown nitrides. These thin films may find extensive application in visible and near-UV lasers for denser optical storage media and in electronics for automotive and other high volume markets where elevated temperatures and corrosive environments are present. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. ***

9421109 Pearton本研究旨在研究二元（GaN，AlN，InN），三元（InGaN，AlGaN，AlInN）和混合V族（GaAsN，InAsN，AlAsN，GaPN）氮化物中最常见的轻离子杂质（H，O，C）的性质。 这些材料在短波长光发射器件和高温电子器件方面具有很强的潜力。 基本的材料科学信息，这些最常见的杂质在外延生长的薄膜中的能级，溶解度和扩散率是缺乏的，并将提供重要的信息，以进一步了解和利用III-N材料的进展。 正如在其他半导体中一样，预计H，O和C将对氮化物的电学和光学性质产生强烈影响。在这个项目中获得的知识将大大提高对外延生长氮化物中主要残留杂质影响的理解。 这些薄膜可以广泛应用于可见光和近紫外激光器中，用于更密集的光学存储介质，以及用于汽车和其他高容量市场的电子产品，其中存在高温和腐蚀性环境。 该计划的一个重要特点是在材料研究的基础和技术重要领域对学生进行培训。***