Impact Ionization Coefficients in Ga2O3

Ga2O3 中的碰撞电离系数

• 批准号: 1856662
• 负责人: Stephen Pearton
• 金额: $ 33.12万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1856662&HistoricalAwards=false
• 关键词: Impact; Ionization; Coefficients; Ga2O3

Nontechnical description: The project is focused on fundamental materials properties of wide bandgap semiconductor, gallium oxide, which shows promise in a range of electrical and optical systems. Since this is a relatively unexplored material, there is a need to establish its basic properties, including parameters that are important for understanding how the material will behave under high electric fields. The research is particularly addressing the impact ionization coefficients, which are currently not established experimentally. The proposed research plan is tackling these parameters at different electric fields and temperatures and is comparing them to the established theory for high voltage behavior in other semiconductor materials. The research, which combines both experimental studies and advanced simulations, is aimed at developing a fundamental understanding of the way in which electrons and holes behave in this promising wide bandgap semiconductor. The role of defects and impurities on the high voltage characteristics of this material impacts a range of technologies including power control electronics in electric vehicles and associated charging infrastructure, ultraviolet emitters and detectors and high frequency/high temperature electronics. The activities provide collaborative research opportunities for a graduate student and several undergraduate students and also engages high school students from underrepresented groups and economically disadvantaged backgrounds.Technical description: The research focuses on fundamental studies of the breakdown mechanism and the role of common defect types and their density on carrier multiplication in gallium oxide. This is a promising material for high power, high temperature systems applications. This proposal will establish basic materials parameters and their electric field and temperature dependence, which are needed to understand the carrier transport and multiplication mechanisms in gallium oxide. The fundamental relations governing the electron and hole transport at high electric fields and over a range of temperatures in gallium oxide needs to be established experimentally. More specifically, the experimental studies focus on examining the temperature dependence of impact ionization coefficients using carrier injection into structures which are biased at a variety of voltages to establish an electric field. The carrier multiplication anticipated under such conditions effect can also be affected by the type and density of defects in the material and this needs to be quantified by examining samples with different defect densities. The research employs electrical characterization techniques, including temperature-dependent current-voltage and diffusion length measurements, with structural analysis using transmission electron microscopy with chemical analysis to provide detailed insights on how defects affect the breakdown characteristics of gallium oxide at high voltages. The experiments are supported by advanced electrical simulations as a function of temperature and voltage, which are used to study the expected influence of these parameters on impact ionization of carriers and transport through the gallium oxide layers. The studies are establishing the transport parameters, which are relevant not only for the basic materials science but also for understanding high temperature operation of gallium oxide based power electronics and solar-blind photodetectors.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：该项目专注于宽禁带半导体氧化镓的基本材料性能，该材料在一系列电子和光学系统中显示出前景。由于这是一种相对未被探索的材料，有必要确定其基本属性，包括对于了解材料在高电场下的行为非常重要的参数。这项研究特别涉及碰撞电离系数，目前还没有通过实验确定。拟议的研究计划是在不同的电场和温度下处理这些参数，并将它们与其他半导体材料中高压行为的既定理论进行比较。这项研究结合了实验研究和高级模拟，旨在从根本上了解电子和空穴在这种有希望的宽禁带半导体中的行为方式。缺陷和杂质对这种材料的高压特性的作用影响了一系列技术，包括电动汽车中的功率控制电子设备和相关的充电基础设施、紫外线发射器和探测器以及高频/高温电子设备。这些活动为一名研究生和几名本科生提供了合作研究的机会，也吸引了来自代表不足的群体和经济困难背景的高中生。技术描述：研究重点是对氧化镓中常见缺陷类型和密度对载流子倍增的击穿机制和作用的基础研究。这是一种很有前途的材料，可用于高功率、高温系统。这一提议将建立基本的材料参数以及它们与电场和温度的关系，这是理解氧化镓中载流子传输和倍增机制所必需的。在高电场和一定温度范围内，氧化镓中电子和空穴输运的基本关系需要通过实验来建立。更具体地说，实验研究的重点是通过向结构中注入载流子来检验碰撞电离系数的温度依赖性，这些结构被偏置在不同的电压下以建立电场。在这种条件下预期的载流子倍增效应也可能受到材料中缺陷的类型和密度的影响，这需要通过检查具有不同缺陷密度的样品来量化。这项研究采用了电学表征技术，包括随温度变化的电流-电压和扩散长度测量，并使用透射电子显微镜结合化学分析进行结构分析，以提供关于缺陷如何影响高电压下氧化镓击穿特性的详细见解。这些实验得到了作为温度和电压函数的高级电子模拟的支持，这些模拟用于研究这些参数对载流子碰撞电离和通过氧化镓层的传输的预期影响。这些研究正在确定传输参数，这些参数不仅与基础材料科学有关，而且与理解氧化镓电力电子设备和日盲光探测器的高温运行有关。这一奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga 2 O 3 Schottky rectifiers

18 MeV α 粒子和 10 MeV 质子辐照 Si 掺杂 β -Ga 2 O 3 肖特基整流器中非平衡载流子动力学的电子束探测

• DOI: 10.1063/5.0052601
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Modak, Sushrut;Chernyak, Leonid;Schulte, Alfons;Xian, Minghan;Ren, Fan;Pearton, Stephen J.;Lubomirsky, Igor;Ruzin, Arie;Kosolobov, Sergey S.;Drachev, Vladimir P.
• 通讯作者: Drachev, Vladimir P.

Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H + - and D + -Implanted Ga 2 O 3

编辑选择 – H 和 D 注入 Ga 2 O 3 中氧-氢中心的振动特性

• DOI: 10.1149/2162-8777/abd458
• 发表时间: 2020
• 期刊: ECS Journal of Solid State Science and Technology
• 影响因子: 2.2
• 作者: Portoff, Amanda;Venzie, Andrew;Qin, Ying;Stavola, Michael;Fowler, W. Beall;Pearton, Stephen J.
• 通讯作者: Pearton, Stephen J.

Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

质子辐照超厚 γ-Ga2O3 中的输运态和俘获态

• DOI: 10.1116/6.0002673
• 发表时间: 2023
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Polyakov, A. Y.;Nikolaev, V. I.;Pechnikov, A. I.;Yakimov, E. B.;Lagov, P. B.;Shchemerov, I. V.;Vasilev, A. A.;Kochkova, A. I.;Chernykh, A. V.;Lee, In-Hwan
• 通讯作者: Lee, In-Hwan

Deep level defect states in β-, α-, and ɛ -Ga 2 O 3 crystals and films: Impact on device performance

β-、α- 和 É-Ga 2 O 3 晶体和薄膜中的深能级缺陷态：对器件性能的影响

• DOI: 10.1116/6.0001701
• 发表时间: 2022
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Polyakov, Alexander Y.;Nikolaev, Vladimir I.;Yakimov, Eugene B.;Ren, Fan;Pearton, Stephen J.;Kim, Jihyun
• 通讯作者: Kim, Jihyun

Ga + -focused ion beam damage in n-type Ga 2 O 3

n 型 Ga 2 O 3 中的 Ga 聚焦离子束损伤

• DOI: 10.1116/5.0099892
• 发表时间: 2022
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Xia, Xinyi;Al-Mamun, Nahid Sultan;Warywoba, Daudi;Ren, Fan;Haque, Aman;Pearton, S. J.
• 通讯作者: Pearton, S. J.