p-type Doping of ZnO Using Ion Implantation

技术：该项目旨在更好地了解ZnO中受体掺杂物的行为。研究内容包括：(1)在ZnO薄膜和纳米线中注入p型掺杂剂并进行退火处理；将研究均匀p-纳米线和纵向p-n结。测量电输运和光发射特性，以确定掺杂剂的电离水平和激活效率。基于尺寸和稳定性参数（N， P和As），未掺杂的ZnO的电学性质作为植入温度和退火后温度的函数将通过霍尔和电化学CV测量得到。通过对相同样品的SIMS测量来评估扩散特性，以确定ZnO植入物掺杂的最合适选择。具体要调查的领域有：1。在蓝宝石衬底上以低补偿水平生长的ZnO绝缘薄膜中植入N、P或As受体；2. 在某些情况下，O的共注入将用于维持化学计量并减少O空位的形成；3. 从载流子浓度对时间和温度的依赖关系可以得到掺杂剂活化的活化能；4. 植入掺杂剂的再分布将通过SIMS谱分析来测量；5. 在轻掺杂的n-ZnO薄膜中植入受体形成p-n结，并对结的性质（击穿电压、击穿温度系数）进行了表征；6. v族掺杂ZnO的共掺杂7. 将受体植入绝缘或轻n型线中制备p型ZnO纳米线，然后退火。金属丝的输运特性将有助于测定薄膜和金属丝中活化行为的差异，从而量化表面相关现象对掺杂剂活化的影响。非技术：本项目涉及电子/光子材料科学的基础研究问题，具有很高的技术相关性，并有望为学生的培训提供重要的机会。了解p型ZnO的掺杂行为和性质将有助于开发这种用于紫外光子学和透明电子技术的材料。它将使研究生和本科生接触到一系列基础材料科学现象和器件问题，以及各种实验技术。美国州立大学有一个学生科学训练项目，这个项目将挑选出一群10年级和11年级的学生来做科学和工程方面的研究。作为这个项目的一部分，将接待两名这样的学生。项目负责人还将在暑期为教师研究更新经验项目做一个关于氧化锌的讲座，并将与教师合作，将研究经验转化为可以带回初中和高中的模块。

Technical: This project aims for greater understanding of acceptor dopant behavior in ZnO. The investigation includes: (i) Implantation of p-type dopants into ZnO thin films and nanowires followed by annealing; both uniform p-nanowires and longitudinal p-n junctions will be studied. (ii) Measurement of electrical transport and optical emission properties to establish dopant ionization levels and activation efficiency. Electrical properties of undoped ZnO implanted with the most likely successful dopant candidates, based on size and stability arguments ( N, P and As), as a function of both implant temperature and post-anneal temperature will be obtained from Hall and electrochemical CV measurements. Diffusion properties will be assessed from SIMS measurements on the same samples to establish the most appropriate choice for implant doping of ZnO. Specific areas to be investigated are : 1. implantation of N, P or As acceptor species into insulating ZnO films grown with low compensation levels on sapphire substrates; 2. in some cases co-implantation of O will be used to maintain stoichiometry and reduce formation of O vacancies; 3. the activation energy of dopant activation will be obtained from time and temperature dependence of sheet carrier concentrations; 4. the redistribution of implanted dopants will be measured by SIMS profiling; 5. formation of p-n junctions by implantation of acceptors into lightly doped n-ZnO films and characterization of the junction properties (breakdown voltage, temperature coefficient of breakdown); 6. Te co-doping of group-V doped ZnO; 7. creation of p-type ZnO nanowires by acceptor implantation into insulating or lightly n-type wires, followed by annealing. Transport properties of wires will enable determination of differences in activation behavior in films versus wires and thus to quantify the effects of surface - related phenomena on dopant activation. Non-technical: The project addresses basic research issues in electronics/photonics materials science with high technological relevance, and is expected to provide important opportunities for student training. Understanding the doping behavior and properties of p-type ZnO will assist in developing this material for UV photonics and transparent electronics technology. It will expose graduate and undergraduate students to a range of fundamental materials science phenomena as well as device issues, and to a variety of experimental techniques. The U. FL has a Student Science Training Program which brings in a select group of 10th and llth grade students to do research in science and engineering. Two such students will be hosted as part of this project. The PI will also present a lecture on ZnO to a Teacher Research Update Experience program during the summer and will collaborate with teachers to translate research experiences into modules which can be taken back to middle and high schools.