p-type Doping of ZnO Using Ion Implantation

技术：该项目旨在更好地了解ZnO中的受主掺杂行为。调查包括：（i）将p型掺杂剂注入ZnO薄膜和纳米线中，然后退火;将研究均匀的p纳米线和纵向p-n结。(ii)测量电输运和光发射特性，以确定掺杂剂电离水平和激活效率。基于尺寸和稳定性参数（N，P和As），注入最有可能成功的掺杂剂候选物的未掺杂ZnO的电性能，作为注入温度和退火后温度的函数，将从霍尔和电化学CV测量获得。扩散特性将从相同样品的西姆斯测量进行评估，以确定ZnO注入掺杂的最合适的选择。具体要调查的领域有：1.在蓝宝石衬底上以低补偿水平生长的绝缘ZnO膜中注入N、P或As受体物质; 2.在某些情况下，O的共注入将用于维持化学计量并减少O空位的形成; 3.掺杂剂激活的激活能将从片载流子浓度的时间和温度依赖性获得; 4.注入的掺杂剂的再分布将通过西姆斯轮廓测量; 5.通过在轻掺杂n-ZnO薄膜中注入受主形成p-n结并表征结特性（击穿电压、击穿温度系数）; 6. Te共掺杂的V族掺杂ZnO; 7.通过将受体注入到绝缘或轻n型线中，然后退火，来产生p型ZnO纳米线。线的传输性质将使得能够确定膜与线中的活化行为的差异，从而量化表面相关现象对掺杂剂活化的影响。非技术性：该项目解决了电子/光子材料科学中具有高技术相关性的基础研究问题，预计将为学生培训提供重要机会。了解p型ZnO的掺杂行为和性质将有助于开发这种用于紫外光子学和透明电子技术的材料。它将使研究生和本科生接触到一系列基本的材料科学现象以及设备问题，以及各种实验技术。联合佛罗里达州有一个学生科学培训计划，带来了一组精选的10日和11年级的学生做科学和工程研究。两个这样的学生将作为该项目的一部分接待。PI还将在夏季为教师研究更新体验计划举办ZnO讲座，并将与教师合作，将研究经验转化为可以带回初中和高中的模块。

Technical: This project aims for greater understanding of acceptor dopant behavior in ZnO. The investigation includes: (i) Implantation of p-type dopants into ZnO thin films and nanowires followed by annealing; both uniform p-nanowires and longitudinal p-n junctions will be studied. (ii) Measurement of electrical transport and optical emission properties to establish dopant ionization levels and activation efficiency. Electrical properties of undoped ZnO implanted with the most likely successful dopant candidates, based on size and stability arguments ( N, P and As), as a function of both implant temperature and post-anneal temperature will be obtained from Hall and electrochemical CV measurements. Diffusion properties will be assessed from SIMS measurements on the same samples to establish the most appropriate choice for implant doping of ZnO. Specific areas to be investigated are : 1. implantation of N, P or As acceptor species into insulating ZnO films grown with low compensation levels on sapphire substrates; 2. in some cases co-implantation of O will be used to maintain stoichiometry and reduce formation of O vacancies; 3. the activation energy of dopant activation will be obtained from time and temperature dependence of sheet carrier concentrations; 4. the redistribution of implanted dopants will be measured by SIMS profiling; 5. formation of p-n junctions by implantation of acceptors into lightly doped n-ZnO films and characterization of the junction properties (breakdown voltage, temperature coefficient of breakdown); 6. Te co-doping of group-V doped ZnO; 7. creation of p-type ZnO nanowires by acceptor implantation into insulating or lightly n-type wires, followed by annealing. Transport properties of wires will enable determination of differences in activation behavior in films versus wires and thus to quantify the effects of surface - related phenomena on dopant activation. Non-technical: The project addresses basic research issues in electronics/photonics materials science with high technological relevance, and is expected to provide important opportunities for student training. Understanding the doping behavior and properties of p-type ZnO will assist in developing this material for UV photonics and transparent electronics technology. It will expose graduate and undergraduate students to a range of fundamental materials science phenomena as well as device issues, and to a variety of experimental techniques. The U. FL has a Student Science Training Program which brings in a select group of 10th and llth grade students to do research in science and engineering. Two such students will be hosted as part of this project. The PI will also present a lecture on ZnO to a Teacher Research Update Experience program during the summer and will collaborate with teachers to translate research experiences into modules which can be taken back to middle and high schools.