p-type Doping of ZnO Using Ion Implantation

使用离子注入进行 ZnO 的 p 型掺杂

• 批准号: 0703340
• 负责人: Stephen Pearton
• 金额: $ 24万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-05-15 至 2010-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0703340&HistoricalAwards=false
• 关键词: type; Doping; ZnO; Using; Ion

Technical: This project aims for greater understanding of acceptor dopant behavior in ZnO. The investigation includes: (i) Implantation of p-type dopants into ZnO thin films and nanowires followed by annealing; both uniform p-nanowires and longitudinal p-n junctions will be studied. (ii) Measurement of electrical transport and optical emission properties to establish dopant ionization levels and activation efficiency. Electrical properties of undoped ZnO implanted with the most likely successful dopant candidates, based on size and stability arguments ( N, P and As), as a function of both implant temperature and post-anneal temperature will be obtained from Hall and electrochemical CV measurements. Diffusion properties will be assessed from SIMS measurements on the same samples to establish the most appropriate choice for implant doping of ZnO. Specific areas to be investigated are : 1. implantation of N, P or As acceptor species into insulating ZnO films grown with low compensation levels on sapphire substrates; 2. in some cases co-implantation of O will be used to maintain stoichiometry and reduce formation of O vacancies; 3. the activation energy of dopant activation will be obtained from time and temperature dependence of sheet carrier concentrations; 4. the redistribution of implanted dopants will be measured by SIMS profiling; 5. formation of p-n junctions by implantation of acceptors into lightly doped n-ZnO films and characterization of the junction properties (breakdown voltage, temperature coefficient of breakdown); 6. Te co-doping of group-V doped ZnO; 7. creation of p-type ZnO nanowires by acceptor implantation into insulating or lightly n-type wires, followed by annealing. Transport properties of wires will enable determination of differences in activation behavior in films versus wires and thus to quantify the effects of surface - related phenomena on dopant activation. Non-technical: The project addresses basic research issues in electronics/photonics materials science with high technological relevance, and is expected to provide important opportunities for student training. Understanding the doping behavior and properties of p-type ZnO will assist in developing this material for UV photonics and transparent electronics technology. It will expose graduate and undergraduate students to a range of fundamental materials science phenomena as well as device issues, and to a variety of experimental techniques. The U. FL has a Student Science Training Program which brings in a select group of 10th and llth grade students to do research in science and engineering. Two such students will be hosted as part of this project. The PI will also present a lecture on ZnO to a Teacher Research Update Experience program during the summer and will collaborate with teachers to translate research experiences into modules which can be taken back to middle and high schools.

技术：该项目旨在更好地了解受主掺杂在氧化锌中的行为。研究内容包括：(I)将p型掺杂注入到氧化锌薄膜和纳米线中，然后进行热处理；将研究均匀的p-纳米线和纵向的p-n结。(2)测量电传输和光发射特性，以确定掺杂剂的电离水平和激活效率。根据尺寸和稳定性参数(N、P和As)，通过霍尔和电化学循环伏安测量，将获得注入最有可能成功的候选掺杂的未掺杂氧化锌的电学性质，作为注入温度和退火后温度的函数。扩散性能将通过对相同样品的SIMS测量进行评估，以确定最合适的植入掺杂氧化锌的选择。需要研究的具体领域是：1.在蓝宝石衬底上低补偿水平生长的绝缘氧化锌薄膜中注入N、P或As受主物种；2.在某些情况下，将使用O的共注入来保持化学计量比并减少O空位的形成；3.掺杂激活的激活能将由单载流子浓度与时间和温度的关系得到；4.注入杂质的再分布将通过SIMS分布来测量；5.受主注入到轻掺杂的n-ZnO薄膜中形成p-n结，并表征结的性质(击穿电压、击穿温度系数)；6.钒族掺杂氧化锌的TE共掺杂；7.受主注入绝缘线或轻n型线，然后进行退火制得p型氧化锌纳米线。导线的输运性质将能够确定薄膜和导线中活化行为的差异，从而量化与表面相关的现象对掺杂活化的影响。非技术性：该项目涉及具有高度技术相关性的电子/光子学材料科学的基础研究问题，预计将为学生培训提供重要机会。了解p型氧化锌的掺杂行为和性质将有助于开发用于紫外光光子学和透明电子技术的这种材料。它将使研究生和本科生接触到一系列基本的材料科学现象和设备问题，以及各种实验技术。美国佛罗里达大学有一个学生科学培训计划，该计划挑选一批10年级和11年级的学生进行科学和工程方面的研究。作为该项目的一部分，将接待两名这样的学生。PI还将在暑期向教师研究更新体验计划提供一堂关于氧化锌的讲座，并将与教师合作，将研究经验转化为模块，可以带回初中和高中。