Ion Implantation Doping Isolation of III-Nitrides

III 族氮化物的离子注入掺杂隔离

• 批准号: 9732865
• 负责人: Stephen Pearton
• 金额: --
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-04-15 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9732865&HistoricalAwards=false
• 关键词: Ion; Implantation; Doping; Isolation; III

9732865 Pearton This project will investigate n- and p-type doping of GaN and related alloys by ion implantation and high temperature annealing to achieve greater understanding of doping in GaN and related materials. Research activities include study of several major topics: (i) use of Mg/O or Be/O co-implantation to achieve high (10E18cm-3) p-type doping of GaN and AlGaN. By varying the doses of each co-implanted species existing theory will be tested, and the role of O established by comparing its effect to that of other species; co-implant species include N, Ar or F. (ii) comparison of different acceptor dopants: Ca was found to have a similar ionization level to that of Mg, i.e., ~170meV. Zn, Cd, Be will be implanted, and C, Ge and Sn will be co- implanted with group III species to assess their functionality as acceptors. (iii) comparison of different donor dopants; the doping properties of the group VI species, S, Se and Te are, as yet, not established in GaN. (iv) use of ultra-high annealing temperatures to achieve higher activation efficiency. Preliminary data indicate higher doping can be achieved for annealing at 1500 C. The major problem at these temperatures is preservation of the GaN surfaces - various methods of AlN deposition will be investigated as a solution. (v) investigation of new implant isolation species, such as V, Fe or Co, which might create thermally stable deep levels in GaN and have application to produce device isolation. The significance of this work will be the development of a more complete understanding of doping in GaN and related materials providing a materials science basis for selective area implantation in the development of advanced devices. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. The basic knowled ge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

小行星9732865 该项目将通过离子注入和高温退火研究GaN和相关合金的n型和p型掺杂，以更好地了解GaN和相关材料的掺杂。研究活动包括几个主要课题的研究：（i）使用Mg/O或Be/O共注入实现GaN和AlGaN的高（10 E18 cm-3）p型掺杂。通过改变每种共注入物质的剂量，将测试现有的理论，并通过将其效果与其他物质的效果进行比较来确定O的作用;共注入物质包括N、Ar或F。 (ii)不同受体掺杂剂的比较：发现Ca具有与Mg相似的电离水平，即，~170meV。 Zn、Cd、Be将被注入，C、Ge和Sn将与III族物质共同注入，以评估它们作为受体的功能。(iii)不同施主掺杂剂的比较;第VI族物质S、Se和Te的掺杂性质尚未在GaN中建立。(iv)使用超高退火温度以实现更高的激活效率。初步数据表明，在1500 ℃下退火可以实现更高的掺杂。在这些温度下的主要问题是GaN表面的保护-将研究AlN沉积的各种方法作为解决方案。(v)研究新的注入隔离物质，如V、Fe或Co，它们可能在GaN中产生热稳定的深能级，并应用于产生器件隔离。这项工作的意义将是发展一个更完整的了解掺杂在GaN和相关材料提供了材料科学的基础上，选择性区域注入先进器件的发展。 该项目解决了具有高技术相关性的材料科学专题领域的基础研究问题。该研究将在基础层面上为电子/光子器件的重要方面提供基础材料科学知识。从研究中获得的基本知识和理解，预计将有助于提高先进器件和电路的性能和稳定性，为设计和生产改进的材料和材料组合提供基本的理解和基础。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。 ***