Stability of Intermetallic Contacts to Compound Semiconductor Alloys Lattice-Matched to Indium Phosphide

与磷化铟晶格匹配的化合物半导体合金金属间接触的稳定性

• 批准号: 9424478
• 负责人: Y. Austin Chang
• 金额: $ 27.37万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-07-01 至 1999-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9424478&HistoricalAwards=false
• 关键词: Stability; Intermetallic; Contacts; Compound; Semiconductor

9424478 Chang The objectives of this research are to investigate the stability of intermetallic contacts to two compound semiconductor alloys, InGaAs and InAlAs, which are lattice-matched to InP, and to study the electrical behavior of selected intermetallic contacts to these two compound semiconductor alloys. The thermodynamic stabilities of the quaternary systems will be studied by determining relevant phase equilibria. Both the four-point probe and transmission line methods will be used to study the electrical behavior of the ohmic contacts. For those material combinations giving significant Schottky contacts, both I-V and C-V methods will be used. Films of intermetallics will be deposited on the compound semiconductor alloys by sputter deposition, and annealing of the contacts will be carried out using a rapid thermal annealing furnace. The metal/semiconductor interfaces will be characterized in the as-deposited state and after annealing using a variety of surface-sensitive techniques, including TEM, SAM and GAXRD (glancing angle x-ray diffraction). %%% The results of the proposed study are expected to provide improved fundamental understanding of the relationship between electrical behavior of intermetallics/compound semiconductor alloy combinations, and the thermodynamic and kinetic stabilities at their interfaces. Concurrently, the research investigation can have a significant impact on the design and development of optoelectronic and high-speed electronic devices for practical applications. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. ***

本研究的目的是研究与InP晶格匹配的InGaAs和InAlAs两种化合物半导体合金的金属间接触点的稳定性，并研究这两种化合物半导体合金的金属间接触点的电学行为。通过确定相平衡来研究四元体系的热力学稳定性。四点探头法和传输线法都将用于研究欧姆触点的电学行为。对于那些具有显著肖特基接触的材料组合，将同时使用I-V和C-V方法。金属间化合物薄膜将通过溅射沉积在化合物半导体合金上，触点的退火将使用快速热退火炉进行。金属/半导体界面将在沉积状态和退火后使用各种表面敏感技术进行表征，包括TEM， SAM和GAXRD（掠角x射线衍射）。该研究的结果有望对金属间化合物/化合物半导体合金组合的电学行为及其界面的热力学和动力学稳定性之间的关系提供改进的基本理解。同时，该研究对实际应用的光电和高速电子器件的设计和开发具有重要影响。该计划的一个重要特点是培养学生在材料研究的一个基本的和技术上重要的领域。＊＊＊