Stability of Metal Contacts to Indium Phosphide

金属与磷化铟接触的稳定性

• 批准号: 9121766
• 负责人: Y. Austin Chang
• 金额: $ 19.3万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-07-15 至 1995-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9121766&HistoricalAwards=false
• 关键词: Stability; Metal; Contacts; Indium; Phosphide

Fundamental research to investigate the thermodynamic, kinetic and morphological stabilities of metal contacts to indium phosphide and to correlate the electrical behavior of selected InP/metal and intermetallic contacts in terms of their stabilities at the interfaces will be conducted. The research is of particular interest for providing a sounder scientific basis for the improvement--performance and reliability--of ohmic contacts and Shottky barriers to compound semiconductor materials, and is considered critical to advanced electronics and photonics science and technology. %%% This research is expected to provide deeper fundamental understanding of basic properties of metal interfaces to electronic/photonic materials. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.

将进行基础研究，以调查金属与磷化铟接触的热力学、动力学和形态稳定性，并将选定的 InP/金属和金属间接触的电学行为与界面稳定性相关联。 这项研究特别令人感兴趣的是，为改善化合物半导体材料的欧姆接触和肖特基势垒的性能和可靠性提供了更可靠的科学基础，并且被认为对先进电子和光子科学技术至关重要。 %%% 这项研究预计将为电子/光子材料金属界面的基本性质提供更深入的基础理解。 从应用的角度来看，了解这些特性及其与材料合成和加工的关系有利于半导体器件的设计和制造。 研究结果对于大规模、高速集成电子和光子器件和电路技术具有普遍意义。