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Stability of Metal Contacts to Indium Phosphide

Stability of Metal Contacts to Indium Phosphide
金属与磷化铟接触的稳定性
批准号:
9121766
负责人:
Y. Austin Chang
金额:
$19.3万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-07-15 至 1995-06-30

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中文摘要
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英文摘要
Fundamental research to investigate the thermodynamic, kinetic and morphological stabilities of metal contacts to indium phosphide and to correlate the electrical behavior of selected InP/metal and intermetallic contacts in terms of their stabilities at the interfaces will be conducted. The research is of particular interest for providing a sounder scientific basis for the improvement--performance and reliability--of ohmic contacts and Shottky barriers to compound semiconductor materials, and is considered critical to advanced electronics and photonics science and technology. %%% This research is expected to provide deeper fundamental understanding of basic properties of metal interfaces to electronic/photonic materials. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.
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