Stability of Metal Contacts to Indium Phosphide

基础研究，研究热力学，动力学 以及金属与铟接触的形态稳定性 磷化物和相关的电行为选择 InP/金属和金属间接触， 将在界面处进行稳定。 这项研究是 特别有意义的是， 为了提高欧姆电阻的性能和可靠性， 化合物半导体的接触和肖特基势垒 材料，并被认为是至关重要的先进电子和 光子科学与技术 %%% 这项研究有望提供更深入的基础知识。 了解金属界面的基本性质， 电子/光子材料。 从应用的角度来看， 查看，了解这些属性及其与 材料合成和加工有利于半导体 器件设计和制造。 结果将是重要的 在一般的方式，以大规模，高速度的技术 集成电子和光子器件和电路。

Fundamental research to investigate the thermodynamic, kinetic and morphological stabilities of metal contacts to indium phosphide and to correlate the electrical behavior of selected InP/metal and intermetallic contacts in terms of their stabilities at the interfaces will be conducted. The research is of particular interest for providing a sounder scientific basis for the improvement--performance and reliability--of ohmic contacts and Shottky barriers to compound semiconductor materials, and is considered critical to advanced electronics and photonics science and technology. %%% This research is expected to provide deeper fundamental understanding of basic properties of metal interfaces to electronic/photonic materials. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.