Contact Formation to Gallium Nitride: Interfacial Chemistry, Structure and Properties

氮化镓的接触形成：界面化学、结构和性能

• 批准号: 9902885
• 负责人: Y. Austin Chang
• 金额: $ 52.38万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2003-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9902885&HistoricalAwards=false
• 关键词: Contact; Formation; Gallium; Nitride; Interfacial

This GOALI project represents a collaborative effort between researchers at the U. of Wisconsin and Hewlett-Packard Laboratories to address fundamental materials science issues in ohmic contacts to GaN. The project takes a comprehensive approach to study basic issues concerning the thermodynamic and kinetic stability at metal/GaN interfaces as well as the transport behavior for both n- and p-type GaN. Extensive electrical and metallurgical characterization will be performed on annealed metal/GaN contacts fabricated using selected metallizations as model systems. The electrical characterization will include current-voltage (I-V) and capacitance-voltage (C-V) measurements to determine such properties as the specific contact resistance, the magnitude of the Schottky or contact barrier height, and the changes in the space charge region near the surface. Metallurgical characterization of the reacted interfaces will be performed using a variety of techniques such as SAM, XRD, TEM, HRTEM, SIMS and RBS. To address initial stages of contact formation, the evolution of interfaces will be examined by x-ray photoemission spectroscopy (XPS), utilizing synchrotron radiation. The XPS-based studies on metal/GaN will complement the more extensive characterization of the bulk thin films. The combined studies are expected to provide insight into metal/GaN interfaces not currently available and furnish information critical for development of metallizations to nitride based semiconductor devices.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important fabrication aspects of electronic/photonic devices. New experimental materials science and optical tools are now available to allow more detailed observation of elementary surface/interface processes which when better understood allow advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits for computing and communications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project is co-supported by the DMR/Electronic Materials program and the MPS OMA(Office of Multidisciplinary Activities).***

这个GOALI项目代表了美国研究人员之间的合作努力。的威斯康星州和惠普实验室，以解决欧姆接触GaN的基本材料科学问题。该项目采用综合方法研究有关金属/GaN界面的热力学和动力学稳定性以及n型和p型GaN的输运行为的基本问题。广泛的电气和冶金特性将进行退火金属/GaN接触制作使用选定的金属化模型系统。电气特性将包括电流-电压（I-V）和电容-电压（C-V）测量，以确定特定接触电阻、肖特基或接触势垒高度的大小以及表面附近空间电荷区域的变化等特性。反应界面的冶金表征将使用各种技术进行，如SAM、XRD、TEM、HRTEM、西姆斯和RBS。为了解决接触形成的初始阶段，界面的演变将通过X射线光电子能谱（XPS），利用同步辐射检查。基于XPS的金属/GaN的研究将补充更广泛的大块薄膜的表征。这些综合研究有望深入了解目前尚不存在的金属/GaN界面，并为氮化物基半导体器件的金属化开发提供关键信息。%该项目涉及材料科学专题领域的基础研究问题，具有很高的潜在技术相关性。该研究将在基础水平上为电子/光子器件的重要制造方面提供基础材料科学知识。 新的实验材料科学和光学工具现在可以允许更详细地观察基本表面/界面过程，当更好地理解时，可以促进基础科学和技术的进步。从研究中获得的基本知识和理解预计将有助于提高计算和通信的先进设备和电路的性能和稳定性。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目由DMR/电子材料计划和MPS OMA（多学科活动办公室）共同支持。