NSF Young Investigator

NSF 青年研究员

• 批准号: 9457926
• 负责人: Steven DenBaars
• 金额: $ 27.5万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 2000-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9457926&HistoricalAwards=false
• 关键词: NSF; Young; Investigator

9457926 DenBaars This research program is directed toward understanding and developing novel metallo-organic chemical vapor deposition schemes for the synthesis of III V nitride serniconductor films. The growth techniques of atomic layer epitaxy and flow modulated epitaxy by metallo-organic chemical vapor deposition (MOCVD) will be used to fabricate (aluminum, gallium, indium) nitride heterostructure materials and devices. These novel approaches of MOCVD growth are proposed in order to lower the growth temperature and increase the quality of the films. Growth on a variety of substrates such as: sapphire, silicon carbide, zinc and magnesium oxides, and the use of alternative precursors, such as tertiary-butylamine, will be investigated to improve the optical and electrical properties of the nitride films. %%% This research project involves the fabrication of newly emerging nitride semiconductor materials and devices. This material system has enormous commercial relevance since it is one of the most promising materials for optoelectronic devices operating in the ultraviolet to blue wavelengths. A laser diode fabricated with these materials will vastly improve the optical storage density for CD ROMs and could conceivably enable full color projection displays. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance and to the realization of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***

9457926 DenBaars本研究计划旨在了解和开发新的金属有机化学气相沉积方案，用于合成III V族氮化物半导体薄膜。 金属有机化学气相沉积（MOCVD）原子层外延和流动调制外延生长技术将用于制备（铝、镓、铟）氮化物异质结构材料和器件。 这些新的MOCVD生长方法的提出是为了降低生长温度，提高薄膜的质量。 生长在各种基板上，如：蓝宝石，碳化硅，锌和镁的氧化物，和使用替代前体，如叔丁胺，将被调查，以提高光学和电学性能的氮化物薄膜。 本研究计画主要针对新兴氮化物半导体材料与元件之制作。 这种材料系统具有巨大的商业意义，因为它是在紫外到蓝光波长下工作的光电器件的最有前途的材料之一。 用这些材料制造的激光二极管将大大提高CD ROM的光存储密度，并可能实现全色投影显示。 该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 这一研究将有助于提高通用性能和实现先进的器件和集成电路，用于计算，信息处理和远程通信。 ***