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NSF Young Investigator

NSF Young Investigator
NSF 青年研究员
批准号:
9457926
负责人:
Steven DenBaars
金额:
$27.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-08-01 至 2000-12-31
关键词:

项目摘要

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中文摘要
翻译
这个研究项目旨在理解和开发新的金属有机化学气相沉积方案,用于合成III - V氮化物半导体薄膜。金属有机化学气相沉积(MOCVD)原子层外延和流动调制外延的生长技术将被用于制造(铝、镓、铟)氮化异质结构材料和器件。这些新的MOCVD生长方法是为了降低生长温度和提高薄膜质量而提出的。研究人员将研究在蓝宝石、碳化硅、氧化锌和氧化镁等多种衬底上的生长,以及使用叔丁胺等替代前驱体,以改善氮化膜的光学和电学性能。这个研究项目涉及新兴的氮化半导体材料和器件的制造。这种材料系统具有巨大的商业意义,因为它是在紫外到蓝光波长范围内工作的光电器件中最有前途的材料之一。用这些材料制造的激光二极管将大大提高CD rom的光存储密度,并且可以想象实现全彩投影显示。该计划的一个重要特点是在材料和加工研究的基础和技术上具有重要意义的领域培养研究生和本科生。这项研究将有助于提高整体性能,实现用于计算、信息处理和远程通信的先进器件和集成电路。* * *
英文摘要
9457926 DenBaars This research program is directed toward understanding and developing novel metallo-organic chemical vapor deposition schemes for the synthesis of III V nitride serniconductor films. The growth techniques of atomic layer epitaxy and flow modulated epitaxy by metallo-organic chemical vapor deposition (MOCVD) will be used to fabricate (aluminum, gallium, indium) nitride heterostructure materials and devices. These novel approaches of MOCVD growth are proposed in order to lower the growth temperature and increase the quality of the films. Growth on a variety of substrates such as: sapphire, silicon carbide, zinc and magnesium oxides, and the use of alternative precursors, such as tertiary-butylamine, will be investigated to improve the optical and electrical properties of the nitride films. %%% This research project involves the fabrication of newly emerging nitride semiconductor materials and devices. This material system has enormous commercial relevance since it is one of the most promising materials for optoelectronic devices operating in the ultraviolet to blue wavelengths. A laser diode fabricated with these materials will vastly improve the optical storage density for CD ROMs and could conceivably enable full color projection displays. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance and to the realization of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***
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会议论文
U.S.-Saudi Arabia Workshop on Photonics Technology for Advanced Energy Conservation, Thuwal, Saudi Arabia, November 2010
Understanding Defects Generated by the Low Temperature Aqueous Synthesis of ZnO
Acquisition of Multi-User Instrumentation for the Epitaxial Growth and Fabrication of III-V Nitride Semiconductor Materials and Devices
Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials
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