NSF Young Investigator
NSF Young Investigator
批准号:
9457926
负责人:
Steven DenBaars
金额:
$27.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-08-01 至 2000-12-31
关键词:
中文摘要
9457926 DenBaars该研究计划旨在了解和开发用于合成III V氮化物半导体薄膜的新型金属有机化学气相沉积方案。采用原子层外延和金属有机化学气相沉积(MOCVD)流动调制外延技术制备(铝、镓、铟)氮化物异质结材料和器件。这些新的MOCVD生长方法是为了降低生长温度和提高薄膜质量而提出的。将研究在蓝宝石、碳化硅、锌和镁氧化物等各种衬底上生长以及叔丁胺等替代前驱体的使用,以改善氮化物薄膜的光学和电学性能。这个研究项目涉及制造新出现的氮化物半导体材料和器件。这种材料体系具有巨大的商业意义,因为它是工作在紫外光到蓝色波长的光电子器件最有前途的材料之一。用这些材料制造的激光二极管将极大地提高CD只读存储器的光存储密度,并可以想见地实现全色投影显示。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高通用性能,实现用于计算、信息处理和远程通信的先进器件和集成电路。***
英文摘要
9457926 DenBaars This research program is directed toward understanding and developing novel metallo-organic chemical vapor deposition schemes for the synthesis of III V nitride serniconductor films. The growth techniques of atomic layer epitaxy and flow modulated epitaxy by metallo-organic chemical vapor deposition (MOCVD) will be used to fabricate (aluminum, gallium, indium) nitride heterostructure materials and devices. These novel approaches of MOCVD growth are proposed in order to lower the growth temperature and increase the quality of the films. Growth on a variety of substrates such as: sapphire, silicon carbide, zinc and magnesium oxides, and the use of alternative precursors, such as tertiary-butylamine, will be investigated to improve the optical and electrical properties of the nitride films. %%% This research project involves the fabrication of newly emerging nitride semiconductor materials and devices. This material system has enormous commercial relevance since it is one of the most promising materials for optoelectronic devices operating in the ultraviolet to blue wavelengths. A laser diode fabricated with these materials will vastly improve the optical storage density for CD ROMs and could conceivably enable full color projection displays. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance and to the realization of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
U.S.-Saudi Arabia Workshop on Photonics Technology for Advanced Energy Conservation, Thuwal, Saudi Arabia, November 2010
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批准号:1032576
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项目类别:Standard Grant
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资助金额:$4.62万
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财政年份:2010
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负责人:Steven DenBaars
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依托单位:
Understanding Defects Generated by the Low Temperature Aqueous Synthesis of ZnO
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批准号:0905254
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项目类别:Continuing Grant
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资助金额:$33.0万
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财政年份:2009
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负责人:Steven DenBaars
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依托单位:
Acquisition of Multi-User Instrumentation for the Epitaxial Growth and Fabrication of III-V Nitride Semiconductor Materials and Devices
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批准号:9413689
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项目类别:Standard Grant
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资助金额:$23.0万
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财政年份:1994
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负责人:Steven DenBaars
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依托单位:
Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials
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批准号:9202290
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项目类别:Continuing Grant
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资助金额:$28.0万
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财政年份:1992
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负责人:Steven DenBaars
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依托单位:
Laser-Assisted Atomic Layer Epitaxy for Selective Area Deposition of InGaAsP/InP Optoelectronic Devices
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批准号:9112192
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项目类别:Standard Grant
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资助金额:$5.63万
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财政年份:1991
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负责人:Steven DenBaars
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依托单位:
海外基金