Laser-Assisted Atomic Layer Epitaxy for Selective Area Deposition of InGaAsP/InP Optoelectronic Devices

提出了一个实验项目， 激光辅助层外延（LALE） InGaAsP/InP基区域淀积 光电子器件. 论证 选择性区域沉积的LALE工艺 InGaAsP/InP异质结构将带来革命性的 目前用于生长和制造的方法 这些装置。 目前的制造技术 光电集成电路（OEIC）涉及 几次外延生长运行和处理 序列的 另一方面， 提供空间受控的外延工艺， 在单次增长运行中增长OEIC。 至今没有 研究已经进行了LALE在 InGaAsP/InP材料体系，是一种具有广阔应用前景的材料体系。 在光通信中日益重要的作用， 光子集成电路 主要目标 该项目的目的是展示 金属有机化学品中的InGaAs和InGaAsP 气相沉积系统（MOCVD）。

An experimental project is proposed to investigate laser-assisted layer epitaxy (LALE) for the selective area deposition of InGaAsP/InP based optoelectronic devices. Demonstration of the LALE process for the selective area deposition of InGaAsP/InP heterstructures could revolutionize the methods currently used to grow and fabricate these devices. Current fabrication techniques for optoelectronic integrated circuits (OEICs) involve several epitaxial growth runs and processing sequences. On the other hand, LALE would provide a spatially controlled epitaxial process to grow OEICs in a single growth run. TO date, no research has been conducted on LALE in the InGaAsP/InP materials system, which is playing an every increasing role in optical communication and photonic integrated circuits. The principal objective of this project is to demonstrate the LALE of InGaAs and InGaAsP in a metalorganic chemical vapor deposition system (MOCVD).