Laser-Assisted Atomic Layer Epitaxy for Selective Area Deposition of InGaAsP/InP Optoelectronic Devices

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An experimental project is proposed to investigate laser-assisted layer epitaxy (LALE) for the selective area deposition of InGaAsP/InP based optoelectronic devices. Demonstration of the LALE process for the selective area deposition of InGaAsP/InP heterstructures could revolutionize the methods currently used to grow and fabricate these devices. Current fabrication techniques for optoelectronic integrated circuits (OEICs) involve several epitaxial growth runs and processing sequences. On the other hand, LALE would provide a spatially controlled epitaxial process to grow OEICs in a single growth run. TO date, no research has been conducted on LALE in the InGaAsP/InP materials system, which is playing an every increasing role in optical communication and photonic integrated circuits. The principal objective of this project is to demonstrate the LALE of InGaAs and InGaAsP in a metalorganic chemical vapor deposition system (MOCVD).