U.S.-Saudi Arabia Workshop on Photonics Technology for Advanced Energy Conservation, Thuwal, Saudi Arabia, November 2010

美国-沙特阿拉伯高级节能光子技术研讨会,沙特阿拉伯图瓦尔,2010 年 11 月

基本信息

  • 批准号:
    1032576
  • 负责人:
  • 金额:
    $ 4.62万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2010
  • 资助国家:
    美国
  • 起止时间:
    2010-08-15 至 2012-07-31
  • 项目状态:
    已结题

项目摘要

DenBaarsThis project supports a "US-Saudi Arabia workshop on Photonics Technology for Advanced Energy Conservation" to be held at King Abdullah University for Science and Technology (KAUST) in Thuwal, Saudi Arabia in November 2010. The US organizer is Dr. Steven P. DenBaars, University of California-Santa Barbara. The Saudi organizer is Dr. Iman Rogan, Professor of Material Science and Engineering at KAUST. The objective of the workshop is to identify areas for collaboration that will lead to joint US-Saudi proposals. The workshop will provide a forum for interaction between US scientists who are at the leading edge of lighting for energy conservation, and the faculty at KAUST and other universities in Saudi Arabia. KAUST has established a "Solar and Alternative Energy Science and Engineering Research Center" with a significant mission to support collaboration with researches abroad. It also plans to establish a "Center for Advanced Photonics Technology", with a similar mission for collaboration with researchers abroad. The workshop will also help direct the research activities for that Center for Advanced Photonics Technology at KAUST. The three day workshop will address the basic materials science and engineering issues required to achieve an all semiconductor-based white-light source with an output greater than 300 lumens/watt, corresponding to greater than 85% wall-plug efficiency. The last half day of the workshop, participants will be asked to proposed directions for the Center for Advanced Photonics Technology at KAUST and propose a working relation with faculty within the KSA leading to proposed research projects.All lighting consumes over 20% of all electricity produced which corresponds to over 25 Quads of primary fuel (with an associated 410 million tons of carbon emissions), at an annual cost approaching $300 billion. Conventional lighting sources include incandescent lamps and fluorescent lamps, which are inefficient at converting electricity to light, i.e., 2-4% (7-15 lumens/watt (lm/W)) for incandescent, and 15-20% (50-80 lm/W) for fluorescent. The workshop topics seek to ameliorate this inefficiency by focusing research efforts in key areas of materials for solid-state lighting. It is expected that the solid state lighting approach will achieve 85% energy efficiency, with a corresponding luminous efficacy of over 300 lumens/watt, and be able to run entirely off sustainable energy sources such as solar or wind. Solid state lighting sources, in addition, offer nearly an infinite field lifetime (e.g., 25-50 years). The outcome of this workshop and the proposed research will be directed towards the science of Light Emitting Diodes (LEDs) based on GaN, the ultimate lighting source that will eventually replace existing lighting technologies.Intellectual Merits: The workshop will discuss areas of: Non-polar and semi-polar LED devices; light devices; defect free bulk GaN crystals, phosphors for solid-state white lighting and energy efficient photonic devices and systems. These are among the cutting edge topics in developing energy efficient lighting systems and devices. The work carried out in the US is among the most advanced in the world, but can benefit from interactions and collaborations with new and upcoming institutes with material and human resources that can expand the work in this important area, which has world-wide benefit.Broader Impacts: The results of the workshop may lead to collaboration between several US institutions with leading Saudi and other Middle East universities in an area that can have a very significant impact on how lighting is provided, and the energy consumption for that lighting. The work can have significant environmental impact by curbing energy consumption. It is planned that 10 senior and 6 junior US scientists, as well as four US post-docs, will participate. Ten participants from within the Kingdom of Saudi Arabia (KSA) and in the Mid-East have also been invited.
DenBaars该项目支持将于2010年11月在沙特阿拉伯图瓦尔的阿卜杜拉国王科技大学(KAUST)举办的“美国-沙特先进节能光子学技术研讨会”。美国组织者是加州大学圣巴巴拉分校的史蒂文·P·登巴尔斯博士。沙特的组织者是KAUST材料科学与工程教授伊曼·罗根博士。研讨会的目标是确定将导致美国和沙特联合提议的合作领域。研讨会将为处于照明节能前沿的美国科学家与KAUST和沙特阿拉伯其他大学的教师之间的互动提供一个论坛。科大科技大学成立了“太阳能和替代能源科学与工程研究中心”,其重要使命是支持与国外研究人员的合作。它还计划建立一个“先进光子学技术中心”,肩负着与国外研究人员合作的类似使命。研讨会还将帮助指导科大先进光子学技术中心的研究活动。为期三天的研讨会将讨论基本的材料科学和工程问题,以实现输出大于300流明/瓦的全半导体白光光源,相当于超过85%的壁塞效率。在研讨会的最后半天,与会者将被要求向KAUST高级光子学技术中心提出方向建议,并建议与KSA内的教职员工建立工作关系,从而导致拟议的研究项目。所有照明设备消耗超过20%的电力,相当于超过25夸脱的初级燃料(相关的4.1亿吨碳排放),年成本接近3000亿美元。传统的光源包括白炽灯和荧光灯,它们在将电能转化为光方面效率较低,即白炽灯为2-4%(7-15流明/瓦(lm/W)),荧光灯为15-20%(50-80 lm/W)。研讨会的主题寻求通过将研究重点放在固态照明材料的关键领域来改善这种低效率。预计固态照明方法将实现85%的能效,相应的发光效率超过300流明/瓦,并能够完全使用太阳能或风能等可持续能源。此外,固态光源提供了几乎无限长的场寿命(例如,25-50年)。本次研讨会和拟议的研究成果将针对基于GaN的发光二极管(LED)的科学,GaN是最终将取代现有照明技术的光源。智力优势:研讨会将讨论以下领域:非极性和半极性LED器件;发光器件;无缺陷块状GaN晶体、用于固态白色照明的荧光粉以及高能效光子器件和系统。这些都是开发节能照明系统和设备的前沿课题。在美国开展的工作是世界上最先进的工作之一,但可以从与新的和即将到来的机构的互动和合作中受益,这些机构拥有物质和人力资源,可以扩大这一重要领域的工作,这对世界各地都有好处。广泛影响:研讨会的结果可能导致几个美国机构与沙特和其他中东顶尖大学在一个领域进行合作,该领域可以对照明的提供方式和照明的能源消耗产生非常重要的影响。这项工作可以通过限制能源消耗来对环境产生重大影响。计划将有10名资深美国科学家和6名初级美国科学家以及4名美国博士后参加。还邀请了来自沙特阿拉伯王国和中东的10名与会者。

项目成果

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Steven DenBaars其他文献

Steven DenBaars的其他文献

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{{ truncateString('Steven DenBaars', 18)}}的其他基金

Understanding Defects Generated by the Low Temperature Aqueous Synthesis of ZnO
了解低温水相合成 ZnO 产生的缺陷
  • 批准号:
    0905254
  • 财政年份:
    2009
  • 资助金额:
    $ 4.62万
  • 项目类别:
    Continuing Grant
NSF Young Investigator
NSF 青年研究员
  • 批准号:
    9457926
  • 财政年份:
    1994
  • 资助金额:
    $ 4.62万
  • 项目类别:
    Continuing Grant
Acquisition of Multi-User Instrumentation for the Epitaxial Growth and Fabrication of III-V Nitride Semiconductor Materials and Devices
收购用于 ​​III-V 氮化物半导体材料和器件外延生长和制造的多用户仪器
  • 批准号:
    9413689
  • 财政年份:
    1994
  • 资助金额:
    $ 4.62万
  • 项目类别:
    Standard Grant
Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials
光子和电子材料非平面外延和选择性区域应变层外延的新型生长和加工技术
  • 批准号:
    9202290
  • 财政年份:
    1992
  • 资助金额:
    $ 4.62万
  • 项目类别:
    Continuing Grant
Laser-Assisted Atomic Layer Epitaxy for Selective Area Deposition of InGaAsP/InP Optoelectronic Devices
用于 InGaAsP/InP 光电器件选择性区域沉积的激光辅助原子层外延
  • 批准号:
    9112192
  • 财政年份:
    1991
  • 资助金额:
    $ 4.62万
  • 项目类别:
    Standard Grant

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