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Acquisition of Multi-User Instrumentation for the Epitaxial Growth and Fabrication of III-V Nitride Semiconductor Materials and Devices

收购用于 III-V 氮化物半导体材料和器件外延生长和制造的多用户仪器

基本信息

批准号：
9413689
负责人：
Steven DenBaars
金额：
$ 23万
依托单位：
University of California-Santa Barbara
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1994
资助国家：
美国
起止时间：
1994-09-15 至 1996-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9413689&HistoricalAwards=false
关键词：
Acquisition Multi User Instrumentation Epitaxial

项目摘要

Instrumentation will be acquired for the metallo-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) synthesis of III-V nitrides using funds from the Academic Research Infrastructure Program. The major items include a RF heated III-V MOCVD nitride system and a nitrogen plasma source for MBE growth. The aluminum, gallium and indium nitride materials are the most promising materials for optoelectronic devices to operate in the ultraviolet to blue wavelength regime. The research activities will focus on: 1) development of novel epitaxial growth technologies for III-V nitride semiconductors, 2) fundamental studies of the epitaxial growth mechanism, and 3) the fabrication of UV/blue laser diodes, high temperature electronics, and vacuum electronics devices. This research involves substantial support and interest from industrial collaborators. Studies of the epitaxial growth of III-V nitride semiconductors will be conducted with the ultimate objective of producing high quality laser diodes for use in the ultraviolet and blue wavelength regimes. The III-V nitride semiconductors are useful materials for high temperature electronics and also for vacumn electronics devices. The III-V nitrides are technologically important materials for devices, particularly at shorter wavelengths and at higher temperatures.

使用学术研究基础设施计划的资金，将购买用于金属有机化学气相沉积(MOCVD)和分子束外延(MBE)合成III-V氮化物的仪器。主要设备包括射频加热的III-V MOCVD氮化物系统和用于MBE生长的氮等离子体源。铝、镓和铟氮化物材料是最有希望在紫外光到蓝光波段工作的光电子器件材料。研究活动将集中在：1)开发新的III-V氮化物半导体外延生长技术；2)外延生长机理的基础研究；3)紫外光/蓝光激光二极管、高温电子器件和真空电子器件的制造。这项研究涉及到来自行业合作者的大量支持和兴趣。将对III-V氮化物半导体的外延生长进行研究，最终目标是生产用于紫外光和蓝光波段的高质量激光二极管。III-V氮化物半导体是用于高温电子器件和真空电子器件的有用材料。III-V氮化物是器件的重要技术材料，特别是在较短波长和较高温度下。