Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials

光子和电子材料非平面外延和选择性区域应变层外延的新型生长和加工技术

• 批准号: 9202290
• 负责人: Steven DenBaars
• 金额: $ 28万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1995-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202290&HistoricalAwards=false
• 关键词: Novel; Growth; Processing; Technologies; Non

Complementary, novel growth and processing techniques for photonic and electronic materials are being investigated. Metalorganic chemical vapor deposition (MOCVD)-based growth on non-planar substrates can give rise to innovative, three-dimensional device concepts. Selective layer epitaxy onto pre-patterned substrates can be used to extend the amount of strain and lattice mismatch possible for defect-free heterostructures. High quality regrowth necessitates clean, defect free surfaces, which imposes constraints in the concomitant etch processes used. This research utilizes largely ion-free, dry chemical cleaning and etch processes. In both materials growth and etching, laser-induced processing to extend the process control possible is being explored. Laser-assisted atomic layer epitaxy will be used to obtain self- limiting, monolayer control of grown layers. Laser-induced photoelectrochemical dry etching will be studied in order to achieve highly controlled, bandgap selective dry etching of heterostructures. %%% Modern electronic and optical semiconductor devices impose increasingly stringent demands on the materials and processes used to form them. The research proposed here, utilizes laser controlled materials deposition, low-damage laser-induced etching and extensive process monitoring, allowing greater inherent process control. Moreover, the innovative approach of growth on previously sculpted structures allows a truly three dimensional approach to device and circuit formation allowing higher ultimate device density in integrated circuits.

人们正在研究用于光子和电子材料的互补、新颖的生长和加工技术。基于金属有机化学气相沉积(MOCVD)在非平面衬底上的生长可以产生创新的三维器件概念。在预图案化衬底上的选择性层外延可用于扩展无缺陷异质结构可能存在的应变和晶格失配量。高质量的再生需要清洁、无缺陷的表面，这对所使用的伴随蚀刻工艺施加了限制。这项研究在很大程度上利用了无离子、干式化学清洗和蚀刻工艺。在材料生长和刻蚀方面，人们正在探索激光诱导加工以扩大工艺控制的可能性。激光辅助原子层外延将被用来获得对生长的层的自限，单层控制。为了实现异质结构的高度可控、带隙选择性干法刻蚀，将对激光诱导光电化学干法刻蚀进行研究。现代电子和光学半导体设备对用于形成它们的材料和工艺提出了越来越严格的要求。在这里提出的研究，利用激光控制材料沉积，低损害激光诱导蚀刻和广泛的工艺监控，允许更大的内在工艺控制。此外，在以前雕刻的结构上生长的创新方法允许真正的三维方法来形成器件和电路，从而在集成电路中实现更高的最终器件密度。