Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials

互补的，新颖的生长和加工技术， 正在研究电子材料。 金属有机化学 在非平面衬底上的基于气相沉积（MOCVD）的生长可以给出 上升到创新的三维设备概念。 选择性层 可以使用在预图案化的衬底上的外延 应变和晶格失配的可能性， 异质结构 高质量的再生需要清洁，无缺陷 表面，这在伴随的蚀刻工艺中施加了约束 采用这项研究主要利用无离子，干式化学清洗， 蚀刻工艺。 在材料生长和蚀刻中，激光诱导 正在探索扩大过程控制的可能性。 激光辅助原子层外延将用于获得自 限制生长层的单层控制。 激光诱导 将研究光电化学干蚀刻，以实现 异质结构的高度受控的带隙选择性干法蚀刻。 %%% 现代电子和光学半导体器件日益增加 对用于形成它们的材料和工艺的严格要求。 的 这里提出的研究，利用激光控制的材料沉积， 低损伤激光诱导蚀刻和广泛的工艺监控， 允许更大的固有过程控制。 此外，创新 在先前雕刻的结构上生长的方法允许真正的 器件和电路形成的三维方法 集成电路中的更高的最终器件密度。

Complementary, novel growth and processing techniques for photonic and electronic materials are being investigated. Metalorganic chemical vapor deposition (MOCVD)-based growth on non-planar substrates can give rise to innovative, three-dimensional device concepts. Selective layer epitaxy onto pre-patterned substrates can be used to extend the amount of strain and lattice mismatch possible for defect-free heterostructures. High quality regrowth necessitates clean, defect free surfaces, which imposes constraints in the concomitant etch processes used. This research utilizes largely ion-free, dry chemical cleaning and etch processes. In both materials growth and etching, laser-induced processing to extend the process control possible is being explored. Laser-assisted atomic layer epitaxy will be used to obtain self- limiting, monolayer control of grown layers. Laser-induced photoelectrochemical dry etching will be studied in order to achieve highly controlled, bandgap selective dry etching of heterostructures. %%% Modern electronic and optical semiconductor devices impose increasingly stringent demands on the materials and processes used to form them. The research proposed here, utilizes laser controlled materials deposition, low-damage laser-induced etching and extensive process monitoring, allowing greater inherent process control. Moreover, the innovative approach of growth on previously sculpted structures allows a truly three dimensional approach to device and circuit formation allowing higher ultimate device density in integrated circuits.