Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials

互补的，新的生长和加工技术的光子和电子材料正在研究。基于金属有机化学气相沉积（MOCVD）在非平面基底上的生长可以产生创新的三维器件概念。选择性层外延到预图型衬底上可以用于扩展应变和晶格错配的量，可能用于无缺陷异质结构。高质量的再生需要清洁，无缺陷的表面，这对所使用的伴随蚀刻工艺施加了限制。这项研究主要利用无离子，干化学清洗和蚀刻工艺。在材料生长和蚀刻两方面，人们都在探索激光诱导加工以扩展过程控制的可能性。激光辅助原子层外延将用于获得自限制，单层控制的生长层。为了实现对异质结构的高度可控、带隙选择性的干刻蚀，将研究激光诱导的光电化学干刻蚀。现代电子和光学半导体器件对制造它们的材料和工艺提出了越来越严格的要求。这里提出的研究，利用激光控制材料沉积，低损伤激光诱导蚀刻和广泛的过程监控，允许更大的内在过程控制。此外，在先前雕刻结构上的创新增长方法允许真正的三维方法来器件和电路形成，从而在集成电路中实现更高的最终器件密度。

Complementary, novel growth and processing techniques for photonic and electronic materials are being investigated. Metalorganic chemical vapor deposition (MOCVD)-based growth on non-planar substrates can give rise to innovative, three-dimensional device concepts. Selective layer epitaxy onto pre-patterned substrates can be used to extend the amount of strain and lattice mismatch possible for defect-free heterostructures. High quality regrowth necessitates clean, defect free surfaces, which imposes constraints in the concomitant etch processes used. This research utilizes largely ion-free, dry chemical cleaning and etch processes. In both materials growth and etching, laser-induced processing to extend the process control possible is being explored. Laser-assisted atomic layer epitaxy will be used to obtain self- limiting, monolayer control of grown layers. Laser-induced photoelectrochemical dry etching will be studied in order to achieve highly controlled, bandgap selective dry etching of heterostructures. %%% Modern electronic and optical semiconductor devices impose increasingly stringent demands on the materials and processes used to form them. The research proposed here, utilizes laser controlled materials deposition, low-damage laser-induced etching and extensive process monitoring, allowing greater inherent process control. Moreover, the innovative approach of growth on previously sculpted structures allows a truly three dimensional approach to device and circuit formation allowing higher ultimate device density in integrated circuits.