Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials
Novel Growth and Processing Technologies for Non-Planar Epitaxy and Selective-Areas Strained Layer Epitaxy of Photonic and Electronic Materials
批准号:
9202290
负责人:
Steven DenBaars
金额:
$28.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-09-01 至 1995-10-31
中文摘要
互补的,新颖的生长和加工技术, 正在研究电子材料。 金属有机化学 在非平面衬底上的基于气相沉积(MOCVD)的生长可以给出 上升到创新的三维设备概念。 选择性层 可以使用在预图案化的衬底上的外延 应变和晶格失配的可能性, 异质结构 高质量的再生需要清洁,无缺陷 表面,这在伴随的蚀刻工艺中施加了约束 采用这项研究主要利用无离子,干式化学清洗, 蚀刻工艺。 在材料生长和蚀刻中,激光诱导 正在探索扩大过程控制的可能性。 激光辅助原子层外延将用于获得自 限制生长层的单层控制。 激光诱导 将研究光电化学干蚀刻,以实现 异质结构的高度受控的带隙选择性干法蚀刻。 %%% 现代电子和光学半导体器件日益增加 对用于形成它们的材料和工艺的严格要求。 的 这里提出的研究,利用激光控制的材料沉积, 低损伤激光诱导蚀刻和广泛的工艺监控, 允许更大的固有过程控制。 此外,创新 在先前雕刻的结构上生长的方法允许真正的 器件和电路形成的三维方法 集成电路中的更高的最终器件密度。
英文摘要
Complementary, novel growth and processing techniques for photonic and electronic materials are being investigated. Metalorganic chemical vapor deposition (MOCVD)-based growth on non-planar substrates can give rise to innovative, three-dimensional device concepts. Selective layer epitaxy onto pre-patterned substrates can be used to extend the amount of strain and lattice mismatch possible for defect-free heterostructures. High quality regrowth necessitates clean, defect free surfaces, which imposes constraints in the concomitant etch processes used. This research utilizes largely ion-free, dry chemical cleaning and etch processes. In both materials growth and etching, laser-induced processing to extend the process control possible is being explored. Laser-assisted atomic layer epitaxy will be used to obtain self- limiting, monolayer control of grown layers. Laser-induced photoelectrochemical dry etching will be studied in order to achieve highly controlled, bandgap selective dry etching of heterostructures. %%% Modern electronic and optical semiconductor devices impose increasingly stringent demands on the materials and processes used to form them. The research proposed here, utilizes laser controlled materials deposition, low-damage laser-induced etching and extensive process monitoring, allowing greater inherent process control. Moreover, the innovative approach of growth on previously sculpted structures allows a truly three dimensional approach to device and circuit formation allowing higher ultimate device density in integrated circuits.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
U.S.-Saudi Arabia Workshop on Photonics Technology for Advanced Energy Conservation, Thuwal, Saudi Arabia, November 2010
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批准号:1032576
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项目类别:Standard Grant
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资助金额:$4.62万
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财政年份:2010
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负责人:Steven DenBaars
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依托单位:
Understanding Defects Generated by the Low Temperature Aqueous Synthesis of ZnO
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批准号:0905254
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项目类别:Continuing Grant
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资助金额:$33.0万
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财政年份:2009
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负责人:Steven DenBaars
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依托单位:
NSF Young Investigator
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批准号:9457926
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项目类别:Continuing Grant
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资助金额:$27.5万
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财政年份:1994
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负责人:Steven DenBaars
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依托单位:
Acquisition of Multi-User Instrumentation for the Epitaxial Growth and Fabrication of III-V Nitride Semiconductor Materials and Devices
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批准号:9413689
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项目类别:Standard Grant
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资助金额:$23.0万
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财政年份:1994
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负责人:Steven DenBaars
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依托单位:
Laser-Assisted Atomic Layer Epitaxy for Selective Area Deposition of InGaAsP/InP Optoelectronic Devices
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批准号:9112192
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项目类别:Standard Grant
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资助金额:$5.63万
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财政年份:1991
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负责人:Steven DenBaars
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依托单位:
国内基金
海外基金
基于FP-Growth关联分析算法的重症患者抗菌药物精准决策模型的构建和实证研究
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批准号:2024Y9049
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项目类别:省市级项目
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资助金额:100.0万元
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批准年份:2024
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负责人:阮君山
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依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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依托单位: