GOALI: A Multidisciplinary Industry-University Partnership to Assess the Processes Controlling Chemical-Mechanical Polishing

GOALI：多学科产学合作，评估控制化学机械抛光的工艺

• 批准号: 9974381
• 负责人: Stephen Beaudoin
• 金额: $ 55万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-09-01 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9974381&HistoricalAwards=false
• 关键词: GOALI; Multidisciplinary; Industry; University; Partnership

Chemical-mechanical polishing (CMP) is a technology of tremendous interest to the semiconductor manufacturing community. It transforms wafers with varying surface topography into wafers with locally and globally flat surfaces. During CMP, a wafer is pressed face-down against a rotating polishing pad that is covered with an aqueous suspension of abrasive particles (slurry). Chemical and materials engineering faculty at Arizona State University will work with industry engineers from Motorola, Rodel, and SpeedFam-IPEC to develop fundamental descriptions of key chemical and mechanical polishing phenomena, and will combine these descriptions into unified, experimentally validated models of CMP processes. Polishing of SiO2 and Cu surfaces will be studied using these models. Molecular dynamic simulations of the interactions between slurry particles and the wafer surfaces will be performed, as well as the reactions that occur on and within thin films during CMP. Surface spectroscopy studies will be performed to assess the rates of surface passivation and dissolution reactions occurring during CMP, and the rate of slurry penetration into the wafer surfaces will be assessed. These fundamental chemical and physical descriptions will be combined with existing finite element removal rate models that are based on stress effects to produce unified CMP process models. The project is expected to provide the identification and quantification of the physical and chemical phenomena of CMP and expression of these results in fundamental models. The models will be useful to industry in the optimization and development of polishing protocols for semiconductor wafers.

化学机械抛光（CMP）是半导体制造界非常感兴趣的技术。 它将具有不同表面形貌的晶片转换为具有局部和全局平坦表面的晶片。 在CMP过程中，晶片面朝下压在旋转的抛光垫上，该抛光垫覆盖有磨料颗粒的水悬浮液（浆料）。 亚利桑那州立大学的化学和材料工程学院将与摩托罗拉、Rodel和SpeedFam-IPEC的工业工程师合作，开发关键化学和机械抛光现象的基本描述，并将联合收割机将这些描述结合成统一的、实验验证的CMP工艺模型。 SiO2和Cu表面的抛光将使用这些模型进行研究。 将进行浆料颗粒和晶片表面之间的相互作用的分子动力学模拟，以及在CMP过程中薄膜上和薄膜内发生的反应。 将进行表面光谱学研究，以评估CMP过程中发生的表面钝化和溶解反应的速率，并评估浆料渗透到晶片表面的速率。这些基本的化学和物理的描述将结合现有的有限元去除率模型，是基于应力的影响，以产生统一的CMP工艺模型。 预计该项目将提供CMP的物理和化学现象的识别和量化，并在基本模型中表达这些结果。 这些模型将有助于工业界优化和发展半导体晶片的抛光方案。