Development and Contruction of an In-situ Processing Extension for Existing Molecular Beam Epitaxy System

现有分子束外延系统原位加工扩展的开发和构建

• 批准号: 9503708
• 负责人: Alexander Zaslavsky
• 金额: $ 12.5万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-01 至 1996-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9503708&HistoricalAwards=false
• 关键词: Development; Contruction; situ; Processing; Extension

9503708 Zaslavsky The addition of this processing extension equipment will enable new research in nansostructure fabrication by regrowth and in the transport, optical properties, and device physics of novel nanostructures. This processing extension will permit regrowth of modulation-doping, contacting and isolating layers on patterned heterostructures prepared with in-situ etched and clearned regrowth surfaces. The processing extension will have the following capabilities: low-damage electron-cyclotron resonance (ECR) plasma reactive ion etching of III-V semiconductors; ECR hydrogen plasma cleaning of etched substrates; surface cleanliness monitoring by Auger spectroscopy; and invacuum transfer of patterned substrates into the MBE growth chamber. The properties of strained and unstained uniform quantum wires fabricated by etching through quantum wells and regrowth with modulation-doping layers on the sidewalls will be studied. A heavily-doped gate electrode layer in the regrowth sequence will permit carrier density modulation in these wires independent of the confining potentials determined by the original heterostructure. Analogously, by pregrowing the appropriate barrier potentials, gated 2-dimensional tunneling structures and superlattices in III-V heterostructures will be fabricated and their transport and optical properties will be investigated down to the quantum dot limit. % This equipment will be used by a group of investigators having complimentary expertise ranging from semiconductor epitaxial growth to nanofabrication and fro transport and optical characterization to device physics and engineering. It represents fundamental materials research important for understanding processing of semiconductor materials, and is ultimately relevant for manufacturing.

小行星9503708 这种加工扩展设备的增加将使新的研究nansostructures制造的再生长和运输，光学性能和设备物理的新型纳米结构。 此处理扩展将允许在用原位蚀刻和清除的再生长表面制备的图案化异质结构上再生长调制掺杂、接触和隔离层。 加工扩展将具有以下能力：低损伤电子回旋共振（ECR）等离子体反应离子蚀刻III-V族半导体; ECR氢等离子体清洗蚀刻基板;表面清洁度监测俄歇光谱;和真空转移图案基板到MBE生长室。 研究了通过刻蚀量子威尔斯阱和再生长调制掺杂层制备的应变和未污染的均匀量子线的性质。 在再生长序列中的重掺杂栅电极层将允许这些线中的载流子密度调制，而与由原始异质结构确定的限制电势无关。 类似地，通过预生长适当的势垒势，将制造III-V异质结构中的门控二维隧穿结构和超晶格，并将研究它们的输运和光学性质直至量子点极限。 该设备将由一组具有互补专业知识的研究人员使用，从半导体外延生长到纳米纤维，从运输和光学特性到器件物理和工程。 它代表了基础材料研究，对于理解半导体材料的加工非常重要，并且最终与制造相关。