CAREER: Strain Effects in Semiconductor Nanostructures

摘要本研究的重点是应变对半导体纳米结构电子性能的影响。由于应变不均匀性强，缺乏二维异质结构的面内对称性，一维线和0D点的应变诱导效应研究相对较少。我们将研究两种不同类型的结构：硅锗（SiGe）线和点，以及通过再生制造的应变III-V线和环。SiGe研究将建立在我们最近对亚微米SiGe量子点的应变松弛和应变诱导量子化的测量基础上。III-V型结构将通过在直接连接到MBE系统的腔室中对应变异质结构中蚀刻的原位图案表面进行调制掺杂再生来制备。这项研究不仅与应变纳米结构物理有关，而且与许多包含应变区域的纳米器件有关。除了研究生训练外，本研究将提供足够的学期和一年的项目给对实验室经验感兴趣的学生。摘要：随着技术的进步，支撑现代计算机和激光器的半导体器件变得越来越小。这些超小型结构受到制造过程中产生的机械应变的复杂影响。我们将实验研究两种半导体的应变效应：用于大多数电子电路的硅，以及对于需要非常高速操作或光学信号的应用至关重要的砷化镓。为了揭示超小型结构中的应变和衡量新设备的前景，这项研究将与布朗大学半导体物理与技术专业的研究生和本科生的教育相结合。教育计划包括半导体器件课程的更新和一个学期的晶体管制造实验室的改造，在完成后，学生将有背景，在拟议研究的子部分进行学期和一年的监督项目。＊＊＊

9702725 Zaslavsky Technical CAREER Abstract The focus of the proposed research is the effect of strain on electronic properties of semiconductor nanostructures. Strain-induced effects in 1D wires and 0D dots are relatively unexplored, because the strain is strongly inhomogeneous and lacks the in-plane symmetry of the much studied 2D heterostructures. We will study two distinct classes of structures: silicon-germanium (SiGe) wires and dots, and strained III-V wires and rings fabricated by regrowth. The SiGe research will build on our recent measurements of strain relaxation and strain-induced quantization in submicron SiGe Quantum dots. The III-V structures will be fabricated by modulation-doping regrowth of in-situ patterned surfaces etched in strained heterostructures in a chamber attached directly to an MBE system. This research is relevant not only to strained nanostructure physics, but also to a number of proposed nanodevices that incorporate strained regions. In addition to graduate student training, this research will provide an ample number of semester and year-long projects for students interested in laboratory experience. %%% Nontechnical CAREER Abstract: As technology advances, semiconductor devices that underpin modern computers and lasers are becoming ever smaller. These ultrasmall structures are affected in complex ways by the mechanical strains that arise during their manufacture. We will experimentally investigate strain effects in two types of semiconductors: silicon, which is used for most electronic circuits, and gallium arsenide, which is crucial for applications that require very high speed operation or optical signals. In shedding light on strain in ultrasmall structures and gauging the promise of novel devices, this research will couple to the education of graduate and undergraduate students in semiconductor physics and technology at Brown. The education plan includes an update of semiconductor device courses and the revamping of a semester-long transistor fabrication laboratory, upon completing which students will have the background to take on semester and year-long supervised projects on sub- sections of the proposed research. ***