CAREER: Strain Effects in Semiconductor Nanostructures

小行星9702725 技术职业摘要拟议的研究重点是应变对半导体纳米结构的电子性质的影响。 1D导线和0 D导线中的应变诱导效应 点 相对来说还没有被探索过，因为这种菌株 强烈的不均匀性和缺乏平面对称性的研究多的二维异质结构。 我们将研究两类不同的结构：硅锗（SiGe）线和点，应变III-V线和环制造的再生长。 硅锗的研究将建立在我们最近的测量基础上 的 应变松弛和 亚微米SiGe量子点中的应变诱导量子化。 III-V族结构将通过调制掺杂再生长来制造。 原位 图案化 表面 蚀刻 在 应变异质结构的腔室直接连接到MBE系统。 这项研究不仅与应变纳米结构物理学有关，而且还与一些提出的包含应变区域的纳米器件有关。 除了研究生培训，这项研究将为对实验室经验感兴趣的学生提供足够数量的学期和长达一年的项目。 %非技术职业摘要：随着技术的进步，支撑现代计算机和激光器的半导体器件正变得越来越小。这些超小型结构受到制造过程中产生的机械应变的复杂影响。 我们将通过实验研究两种类型的 半导体： 硅，用于 大多数电子电路和砷化镓，这对于需要非常高速操作或光信号的应用至关重要。 在揭示超小型结构中的应变和衡量新器件的前景方面，这项研究将与研究生和本科生的教育相结合。 学生 在半导体 物理 在布朗的技术。 该教育计划包括半导体器件课程的更新和为期一个学期的 晶体管制造 实验室， 完成后，学生将有背景采取学期和一年之久的监督项目的子部分的拟议研究。 ***

9702725 Zaslavsky Technical CAREER Abstract The focus of the proposed research is the effect of strain on electronic properties of semiconductor nanostructures. Strain-induced effects in 1D wires and 0D dots are relatively unexplored, because the strain is strongly inhomogeneous and lacks the in-plane symmetry of the much studied 2D heterostructures. We will study two distinct classes of structures: silicon-germanium (SiGe) wires and dots, and strained III-V wires and rings fabricated by regrowth. The SiGe research will build on our recent measurements of strain relaxation and strain-induced quantization in submicron SiGe Quantum dots. The III-V structures will be fabricated by modulation-doping regrowth of in-situ patterned surfaces etched in strained heterostructures in a chamber attached directly to an MBE system. This research is relevant not only to strained nanostructure physics, but also to a number of proposed nanodevices that incorporate strained regions. In addition to graduate student training, this research will provide an ample number of semester and year-long projects for students interested in laboratory experience. %%% Nontechnical CAREER Abstract: As technology advances, semiconductor devices that underpin modern computers and lasers are becoming ever smaller. These ultrasmall structures are affected in complex ways by the mechanical strains that arise during their manufacture. We will experimentally investigate strain effects in two types of semiconductors: silicon, which is used for most electronic circuits, and gallium arsenide, which is crucial for applications that require very high speed operation or optical signals. In shedding light on strain in ultrasmall structures and gauging the promise of novel devices, this research will couple to the education of graduate and undergraduate students in semiconductor physics and technology at Brown. The education plan includes an update of semiconductor device courses and the revamping of a semester-long transistor fabrication laboratory, upon completing which students will have the background to take on semester and year-long supervised projects on sub- sections of the proposed research. ***