CAREER: Strain Effects in Semiconductor Nanostructures

职业：半导体纳米结构中的应变效应

• 批准号: 9702725
• 负责人: Alexander Zaslavsky
• 金额: $ 30万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-06-01 至 2001-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9702725&HistoricalAwards=false
• 关键词: CAREER; Strain; Effects; Semiconductor; Nanostructures

9702725 Zaslavsky Technical CAREER Abstract The focus of the proposed research is the effect of strain on electronic properties of semiconductor nanostructures. Strain-induced effects in 1D wires and 0D dots are relatively unexplored, because the strain is strongly inhomogeneous and lacks the in-plane symmetry of the much studied 2D heterostructures. We will study two distinct classes of structures: silicon-germanium (SiGe) wires and dots, and strained III-V wires and rings fabricated by regrowth. The SiGe research will build on our recent measurements of strain relaxation and strain-induced quantization in submicron SiGe Quantum dots. The III-V structures will be fabricated by modulation-doping regrowth of in-situ patterned surfaces etched in strained heterostructures in a chamber attached directly to an MBE system. This research is relevant not only to strained nanostructure physics, but also to a number of proposed nanodevices that incorporate strained regions. In addition to graduate student training, this research will provide an ample number of semester and year-long projects for students interested in laboratory experience. %%% Nontechnical CAREER Abstract: As technology advances, semiconductor devices that underpin modern computers and lasers are becoming ever smaller. These ultrasmall structures are affected in complex ways by the mechanical strains that arise during their manufacture. We will experimentally investigate strain effects in two types of semiconductors: silicon, which is used for most electronic circuits, and gallium arsenide, which is crucial for applications that require very high speed operation or optical signals. In shedding light on strain in ultrasmall structures and gauging the promise of novel devices, this research will couple to the education of graduate and undergraduate students in semiconductor physics and technology at Brown. The education plan includes an update of semiconductor device courses and the revamping of a semester-long transistor fabrication laboratory, upon completing which students will have the background to take on semester and year-long supervised projects on sub- sections of the proposed research. ***

9702725 Zaslavsky 技术生涯 摘要 本研究的重点是应变对半导体纳米结构电子特性的影响。 一维线和零维点中的应变引起的效应相对尚未被探索，因为应变非常不均匀，并且缺乏大量研究的二维异质结构的面内对称性。 我们将研究两类不同的结构：硅锗 (SiGe) 线和点，以及通过再生长制造的应变 III-V 线和环。 SiGe 研究将建立在我们最近对亚微米 SiGe 量子点应变弛豫和应变诱导量子化的测量基础上。 III-V族结构将通过在直接连接到MBE系统的腔室中的应变异质结构中蚀刻的原位图案化表面的调制掺杂再生长来制造。 这项研究不仅与应变纳米结构物理相关，而且与许多提出的包含应变区域的纳米器件相关。 除了研究生培训外，这项研究还将为对实验室体验感兴趣的学生提供大量的学期和学年项目。 %%% 非技术职业 摘要：随着技术的进步，支撑现代计算机和激光器的半导体设备变得越来越小。这些超小型结构会受到制造过程中产生的机械应变的复杂影响。 我们将通过实验研究两种半导体的应变效应：硅（用于大多数电子电路）和砷化镓（对于需要超高速运行或光信号的应用至关重要）。 为了揭示超小型结构的应变并衡量新型器件的前景，这项研究将与布朗大学半导体物理和技术研究生和本科生的教育相结合。 该教育计划包括半导体器件课程的更新和为期一个学期的晶体管制造实验室的改造，完成这些课程后，学生将具备在拟议研究的各个子部分中进行学期和一年的监督项目的背景。 ***