GOALI: Germanium-on-insulator tunneling transistors

拟议的研究的目的是调查一类新的半导体器件兼容占主导地位的硅技术-隧道晶体管在外延锗绝缘体沟道制造。 这些器件原则上不受标准场效应晶体管的亚阈值摆幅限制的约束，因此有可能在室温下获得大的开/关电流比，同时降低电源电压，从而降低大型集成电路的功耗。 使能的方法涉及使用的晶格匹配的外延高锗，所有生长在硅衬底上的单晶锗绝缘体上的通道相结合。 智力优点：虽然硅基隧穿晶体管是当前工业研究的主题，但绝缘体上锗器件既未开发又有前景，因为较小的Ge带隙承诺在相同的电源电压下具有数量级更高的隧穿电流，并且电流驱动是缩小尺寸的晶体管的关键度量，隧穿或场效应，这将决定未来器件缩放将有多大帮助。 隧穿晶体管的另一个有趣的方面是，它们可以完全省去反型沟道，大大降低电容，这可能会证明对高速模拟放大器有意义。 平面横向隧穿晶体管，有和没有反型沟道，在全外延绝缘体上锗异质结构制造将由IBM-布朗联合研究小组研究，该研究小组具有互补的专业知识和现有的密切合作PI合作的锗设备。更广泛的影响：拟议的研究将衡量锗基隧道晶体管与标准场效应器件相比的技术潜力。替代沟道材料（如Ge）的插入是硅技术路线图的关键部分。 待研究的替代隧穿器件保持VLSI兼容性和室温操作，使它们适用于混合电子电路。 拟议的研究将产生教育影响，布朗研究生与IBM研究密切互动（包括暑期实习），本科生获得研究经验，包括通过布朗MRSEC确定的少数民族机构的本科生，该机构有一个重点推广计划。

The objective of the proposed research is to investigate a new class of semiconductor devices compatible with dominant silicon technology -- tunneling transistors fabricated in epitaxial germanium-on-insulator channels. These devices are not constrained, in principle, by the subthreshold swing limit of standard field effect transistors, so there is the potential of obtaining large on/off current ratios at room temperature while reducing the power supply voltage and hence the power consumption of large integrated circuits. The enabling approach involves the use of ultrathin single-crystal germanium-on-insulator channels combined with lattice-matched epitaxial high- dielectrics, all grown on silicon substrates. Intellectual merit: Although silicon-based tunneling transistors are a topic of current research in industry, germanium-on-insulator devices are both unexplored and promising, because the smaller Ge bandgap promises orders of magnitude higher tunneling current at the same power supply voltage and current drive is a key metric for downscaled transistors, tunneling or field-effect, that will determine how much device scaling will help in the future. Another interesting aspect of tunneling transistors is that they can dispense with the inversion channel altogether, greatly reducing the capacitance, which may prove of interest for high-speed analog amplifiers. Planar lateral tunneling transistors, with and without an inversion channel, fabricated in all-epitaxial Ge-on-insulator heterostructures will be studied by the combined IBM-Brown research team, which has complementary expertise and an existing close co-PI collaboration on Ge devices. Broader Impact: The proposed research will gauge the technological potential of germanium-based tunneling transistors compared to standard field-effect devices. The insertion of alternative channel materials, such as Ge, is a key part of the silicon technology roadmap. The alternative tunneling devices to be studied maintain VLSI compatibility and room temperature operation, making them viable for hybrid electronic circuits. The proposed research will have an educational impact, with Brown graduate students interacting closely with IBM Research (including summer internships), and undergraduates gaining research experience, including undergraduates from minority institutions identified through the Brown MRSEC, which has a focused outreach program.