Electronic Structure of Interfaces, Defects, and Dopants in Wide Band Gap Nitride Semiconductors

9504948史密斯这个合作的跨学科研究项目包括全面测定薄膜难熔金属氮化物和立方氮化硼的详细电子结构，这些氮化物是由最先进的回旋共振辅助分子束外延和离子辅助脉冲激光沉积方法生长的。将研究这些氮化物中缺陷和掺杂的电子结构，薄膜与其衬底之间以及薄膜与金属覆盖层之间的界面的电子结构。此外，还将研究薄膜的化学反应性(特别是当有缺陷或掺杂时)，以了解这些氮化物与衬底和覆盖层的基本化学键和附着力的性质，并了解薄膜在高温下的化学稳定性。电子结构将用互补光电子能谱、逆光电子能谱和软x射线荧光光谱仪进行研究。软X射线荧光将在该项目上得到进一步发展，因为它的优点是可以在外部电场或磁场存在的情况下以及在高温下确定电子结构。本课程的主要目标是对宽禁带半导体材料的电子和光子特性以及外延生长和加工有一个基本的了解，以便利用它们来实现各种先进的电子和光子器件。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和电信的先进器件和集成电路的综合性能。***

9504948 Smith This collaborative, interdisciplinary research project includes a comprehensive determination of detailed electronic structure of thin film refractory metal nitrides and cubic boron nitride grown by state-of-the-art cyclotron resonance-assisted MBE and ion-assisted pulsed laser deposition methods. The electronic structure of defects and dopants in these nitrides, the electronic structure of the interface between the films and their substrates, and between the films and metal overlayers will be studied. Additionally, the chemical reactivity of the films (in particular, when defective or doped) will be investigated in order to understand the nature of elementary chemical bonding and adhesion of these nitrides to both substrates and overlayers, and to understand the chemical stability of the films at elevated temperatures. The electronic structure will be studied using complementary photoemission, inverse photoemission, and soft x-ray fluorescence spectroscopies. Soft x-ray fluorescence will be further developed on the project since it has the advantage that electronic structure can be determined in the presence of external electric or magnetic fields, and at elevated temperatures. %%% The primary goal of this program is to develop a fundamental-understanding of the electronic and photonic properties and the epitaxial growth and processing of wide bandgap semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***