Development of an Inductively-Coupled Plasma Etching and Deposition System for Advanced Material and Device Processing

摘要：本课题旨在开发和测试一种用于先进材料和器件加工的电感耦合等离子体（ICP）蚀刻和沉积系统。将使用100级洁净室，进行6H-SiC和GaN等稳定半导体的蚀刻。这项研究的一个主要目标是就ICP系统最终商业化的可能改进设计向工业伙伴提供反馈和建议。努力将包括建立一个ICP原型系统，评价其蚀刻能力，并与RIE和ECR等其他现有系统进行比较。

Abstract Zhao 9512152 This proposal is for the development and testing of an inductively-coupled plasma (ICP) etching and deposition system for advanced material and device processing. A class-100 clean room will be used in which etching of stable semiconductors such as 6H-SiC and GaN among others will be carried out. A major goal of this research is to provide feedback and suggestions to the industrial partner regarding possible improved design for final commercialization of the ICP system. Efforts will include the setting up of a prototype ICP system and evaluate its etching capabilities and its comparison with other available systems such as RIE and ECR.