Development of an Inductively-Coupled Plasma Etching and Deposition System for Advanced Material and Device Processing

开发用于先进材料和器件加工的感应耦合等离子体蚀刻和沉积系统

• 批准号: 9512152
• 负责人: Jian Zhao
• 金额: $ 10万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9512152&HistoricalAwards=false
• 关键词: Development; Inductively; Coupled; Plasma; Etching

Abstract Zhao 9512152 This proposal is for the development and testing of an inductively-coupled plasma (ICP) etching and deposition system for advanced material and device processing. A class-100 clean room will be used in which etching of stable semiconductors such as 6H-SiC and GaN among others will be carried out. A major goal of this research is to provide feedback and suggestions to the industrial partner regarding possible improved design for final commercialization of the ICP system. Efforts will include the setting up of a prototype ICP system and evaluate its etching capabilities and its comparison with other available systems such as RIE and ECR.

摘要赵9512152 该提案是用于先进材料和器件加工的电感耦合等离子体（ICP）蚀刻和沉积系统的开发和测试。 将使用100级洁净室，其中将进行稳定半导体的蚀刻，例如6 H-SiC和GaN等。 本研究的一个主要目标是为工业合作伙伴提供反馈和建议，以便为ICP系统的最终商业化提供可能的改进设计。 工作将包括建立一个原型ICP系统，评估其蚀刻能力，并将其与其他现有系统（如RIE和ECR）进行比较。