Demonstrating SiC Gate Controlled Thyristors for High Power and High Temperature Applications

演示适用于高功率和高温应用的 SiC 门控晶闸管

• 批准号: 9522634
• 负责人: Jian Zhao
• 金额: $ 10万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-15 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9522634&HistoricalAwards=false
• 关键词: Demonstrating; SiC; Gate; Controlled; Thyristors

9522634 Zhao The potential for SiC is based upon its high breakdown field strength, high temperature operation (due to its wide bandgap) and good thermal conductivity. However, this potential will not be realized unless fundamental studies are carried out on SiC surfaces and with ohmic constacts, especially to p-type regions. The research is directed towards the realization of a Gate Controlled Thyristor (GCT) which is an important device for SiC Power Electronics. A Plasma-Etched (ECR) U-Groove vertical GCT structure fabricated in 6H-SiC is proposed which requires (1) high quality gate oxides over p-type regions and (2) good ohmic to the p-type regions. ***

9522634 SiC的潜力基于其高击穿场强、高温操作（由于其宽带隙）和良好的导热性。 然而，除非对SiC表面和欧姆结构，特别是p型区进行基础研究，否则这种潜力将无法实现。 本论文的研究工作是针对SiC电力电子器件中的一种重要器件&门控晶闸管（GCT）的实现而展开的。 提出了一种在6 H-SiC中制备的等离子体刻蚀（ECR）U型槽垂直GCT结构，该结构要求（1）p型区上的高质量栅氧化层和（2）与p型区的良好欧姆接触。 ***