A Novel Optoelectronic Thyristor for Picosecond High Power Switching Applications (REU Supplement)

用于皮秒高功率开关应用的新型光电晶闸管（REU 补充）

• 批准号: 9009370
• 负责人: Jian Zhao
• 金额: $ 8万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1992-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9009370&HistoricalAwards=false
• 关键词: Novel; Optoelectronic; Thyristor; Picosecond; Power

A new three terminal device, double heterostructure optoelectronic thyristor (DHOET), will be investigated for picosecond high power switching and for generating short laser pulse with high output power. The device is developed from concepts of Si thyristors and double heterostructure (DH) lasers and will be based on GaInAsP/InP heterostructures grown by liquid phase epitaxy. While numerous research works have been reported about Si based thyristors, little has been done as A1GaAs/GaAs and no work has been reported on GaInAsP/InP based thyristors. The main thrust of this proposed study is to understand the effects of band discontinuities ( Ec, Ev) on the turn-on and turn-off speed of the proposed DHOETs and to explore their unique features as compared to Si thyristors including: (i) much higher device speed, (ii) higher device operating temperature, (iii) higher radiation resistance, and (iv) excellent optical triggering sensitivity with InP as the optical window. This research may open up a practically important new research area of III- V-DHOETs for the applications of high speed pulsed power switching and the generation of subnanosecond electrical and optical high power pulses. Research performed in this project is expected to advance our understanding of heterostructures and will have many other important applications such as the potential of fabricating novel optical amplifiers.

研究了一种新型三端器件--双异质结构光电晶闸管(DHOET)，用于实现皮秒级高功率开关和产生高功率短激光脉冲。该器件是从硅晶闸管和双异质结激光器的概念发展而来的，将基于液相外延生长的GaInAsP/InP异质结。虽然关于硅基晶闸管的研究已经有了大量的报道，但对AlGaAsP/GaP晶闸管的研究还很少，对GaInAsP/InP基晶闸管的研究还没有报道。这项拟议研究的主要目的是了解频带不连续(EC，Ev)关于所提出的DHOET的导通和关断速度，并探索它们与硅晶闸管相比的独特特征，包括：(I)更高的器件速度，(Ii)更高的器件工作温度，(Iii)更高的抗辐射性，以及(Iv)以InP为光学窗口的优异的光触发灵敏度。这项研究可能为III-V-DHOET在高速脉冲功率开关和产生亚纳秒电和光高功率脉冲方面的应用开辟一个具有实际意义的新研究领域。本项目所开展的研究有望促进我们对异质结构的理解，并将有许多其他重要的应用，如制造新型光放大器的潜力。