An InP/InGaAsp Based Thyristor for Optical Amplification and Power Switching Applications

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We propose a project directed towards exploring an ultra high power thyristor based on InP homojunctions and the related heterostructures. With higher resistivity and direct band gap InP homojunctions the thyristor is expected to greatly out perform those commercial Si thyristors in power handling capability and switching speed. A new device based on InP related heterostructures is proposed which combines both electrical and optical power switching and lasing action into a single device. The lasing action is realized by introducing a heterostructure laser into the thyristor structure. This new device could be a basic building block for a wide range of applications such as power integrated circuits, ultra high power switching, and optical amplification and communications because the proposed device can be easily scaled up or down depending on the structure of the thyristor. The proposed project will investigate how to best utilize, in a single device, the band discontinuity advantage for optical performance (lasers) and to suppress the disadvantage for electronic performance (thyristors) by utilizing the unique capability being developed by ETDL and some industrial partners to grow graded, lattice matched InGaAsP thin films. The proposed research will also contribute to the knowledge base related to heterointerfaces.