An InP/InGaAsp Based Thyristor for Optical Amplification and Power Switching Applications

用于光放大和功率开关应用的 InP/InGaAsp 晶闸管

• 批准号: 9114689
• 负责人: Jian Zhao
• 金额: $ 7.99万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1994-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9114689&HistoricalAwards=false
• 关键词: InP; InGaAsp; Based; Thyristor; Optical

We propose a project directed towards exploring an ultra high power thyristor based on InP homojunctions and the related heterostructures. With higher resistivity and direct band gap InP homojunctions the thyristor is expected to greatly out perform those commercial Si thyristors in power handling capability and switching speed. A new device based on InP related heterostructures is proposed which combines both electrical and optical power switching and lasing action into a single device. The lasing action is realized by introducing a heterostructure laser into the thyristor structure. This new device could be a basic building block for a wide range of applications such as power integrated circuits, ultra high power switching, and optical amplification and communications because the proposed device can be easily scaled up or down depending on the structure of the thyristor. The proposed project will investigate how to best utilize, in a single device, the band discontinuity advantage for optical performance (lasers) and to suppress the disadvantage for electronic performance (thyristors) by utilizing the unique capability being developed by ETDL and some industrial partners to grow graded, lattice matched InGaAsP thin films. The proposed research will also contribute to the knowledge base related to heterointerfaces.

我们提出了一个项目，旨在探索一个 InP基超大功率晶闸管 同质结和相关的异质结构。 具有较高的电阻率和直接带隙InP 同质结晶闸管有望大大 性能优于那些商用硅晶闸管， 功率处理能力和开关速度。 一 基于InP相关异质结构的新器件， 提出了一种结合了电子和光学 功率开关和激光作用， 设备. 激光作用是通过引入 异质结构激光器进入晶闸管结构。 这种新设备可能是一个基本的构建块， 广泛的应用，如电力 集成电路、超高功率开关和 光放大和通信，因为 所提出的装置可以容易地按比例放大 这取决于晶闸管的结构。 拟议的项目将研究如何最好地 在单个设备中利用带不连续性 光学性能（激光器）的优点， 抑制了电子 性能（热敏电阻）， 正在开发的能力， 产业合作伙伴成长分级，晶格匹配 InGaAsP薄膜 拟议的研究将 也有助于知识库有关， 异质界面