Scanned Probe Lithography for Nano Structures

纳米结构的扫描探针光刻

• 批准号: 9522195
• 负责人: Calvin Quate
• 金额: $ 33万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-01 至 1999-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9522195&HistoricalAwards=false
• 关键词: Scanned; Probe; Lithography; Nano; Structures

9522195 Quate The proposal by Prof. Quate addresses a fundamental issue in nanoscience and engineering, namely, the fabrication of nanostructure electronic devices with a novel anomic-force-microscopy (AFM)-based nanolithographic technique. The proposal uses the concept of 'direct writing' with AFM tips with an innovative approach to building sub 0.1 pm devices and , thereby, open the door to exciting new devices research in the next century. Parenthetically, if we allow the SIA roadmap, then device dimensions are predicted for 700 nm c hannel lengths by the year 2010 and the proposal by Quite leads in this direction. The problem of manufacturing through is addressed with the use of MEMS technology to form an array of parallel proximal silicon probes (i.e. AFM tips on cantilever beams) which are controlled by integrated piezoelectric ZnO actuators on a piezoresisitive cantilever. The high electric field which is produced by the proximity of the AFM probe tip up to the semiconductor surface causes bound protons to be released under the tip with subsequent field-enhanced oxidation. This subsequently serves as an etchant mask to transfer a nanolithograph pattern into the underlying semiconductor. This work is highly revolutionary and visionary. The basic element of and adaptively controlled 'nanowriter' is the component for this instrument research and should be well understood before moving to a large matrix array of similar elements. ***

9522195 Quate Quate教授的提案解决了纳米科学和工程中的一个基本问题，即用一种新的基于失范力显微镜（AFM）的纳米光刻技术制造纳米结构电子器件。 该提案使用“直接写入”的概念与原子力显微镜提示与创新的方法来建立亚0.1 pm的设备，从而打开了大门，令人兴奋的新设备的研究在下一个世纪。 附带说明一下，如果我们允许SIA路线图，那么到2010年，器件尺寸预计为700 nm c沟道长度，Quite的提案在这个方向上领先。 制造通过的问题是解决与使用MEMS技术，形成一个阵列的平行近端硅探针（即悬臂梁上的AFM尖端），这是由集成的压电ZnO致动器上的压阻悬臂控制。 由AFM探针尖端接近半导体表面产生的高电场导致结合质子在尖端下释放，随后发生场增强氧化。 这随后用作蚀刻剂掩模以将纳米光刻图案转移到下面的半导体中。 这项工作具有很强的革命性和前瞻性。 自适应控制的“重写器”的基本元素是本仪器研究的组成部分，在转向类似元素的大型矩阵阵列之前，应充分理解。 ***