Scanned Probe Lithography for Nano Structures

9522195 Quate教授的建议解决了纳米科学和工程中的一个基本问题，即利用基于原子力显微镜的新型纳米光刻技术制造纳米结构电子器件。该提案使用了带有AFM提示的“直接写入”的概念，并以创新的方法构建了低于0.1 PM的设备，从而为下个世纪令人兴奋的新设备研究打开了大门。顺便说一句，如果我们允许SIA路线图，那么到2010年，设备尺寸预计为700 nm c Hannel长度，而该提议在这个方向上是相当领先的。通过使用MEMS技术来解决直通制造的问题，利用MEMS技术形成平行的近端硅探针阵列(即悬臂梁上的AFM尖端)，该阵列由压阻悬臂梁上集成的压电式氧化锌致动器控制。AFM探针尖端靠近半导体表面产生的高电场导致尖端下方的束缚质子释放，从而导致随后的场增强氧化。这随后用作将纳米光刻图案转移到底层半导体中的蚀刻剂掩模。这项工作具有高度的革命性和远见卓识。自适应控制的‘Nanowriter’的基本元素是本仪器研究的组成部分，在转移到类似元素的大型矩阵阵列之前应该得到很好的理解。***

9522195 Quate The proposal by Prof. Quate addresses a fundamental issue in nanoscience and engineering, namely, the fabrication of nanostructure electronic devices with a novel anomic-force-microscopy (AFM)-based nanolithographic technique. The proposal uses the concept of 'direct writing' with AFM tips with an innovative approach to building sub 0.1 pm devices and , thereby, open the door to exciting new devices research in the next century. Parenthetically, if we allow the SIA roadmap, then device dimensions are predicted for 700 nm c hannel lengths by the year 2010 and the proposal by Quite leads in this direction. The problem of manufacturing through is addressed with the use of MEMS technology to form an array of parallel proximal silicon probes (i.e. AFM tips on cantilever beams) which are controlled by integrated piezoelectric ZnO actuators on a piezoresisitive cantilever. The high electric field which is produced by the proximity of the AFM probe tip up to the semiconductor surface causes bound protons to be released under the tip with subsequent field-enhanced oxidation. This subsequently serves as an etchant mask to transfer a nanolithograph pattern into the underlying semiconductor. This work is highly revolutionary and visionary. The basic element of and adaptively controlled 'nanowriter' is the component for this instrument research and should be well understood before moving to a large matrix array of similar elements. ***