SGER: Nanoelectronic Functional Devices

SGER：纳米电子功能器件

• 批准号: 9523423
• 负责人: Vwani Roychowdhury
• 金额: $ 5万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-15 至 1996-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9523423&HistoricalAwards=false
• 关键词: SGER; Nanoelectronic; Functional; Devices

9523423 Roychowdhury Continuing advances in the miniaturization of electron devices have made possible the fabrication of nanoelectric devices with feature sizes in the 1-100nm range. However, it is widely believed that conventional integrated circuit design techniques will become impractical, due to the small size and the low current carrying capacity of nanostructured devices. Proposals which envision novel ways to circumvent this problem have begun to appear in earnest. The majority of these proposals use globally coherent quantum systems to generate computational abilities. We differ from these proposals in that we use semiclassical global models as the basis from which to conceive nanoelectronic functional devices. An additional point of departure, is our assumption that currently perceived limitations to realizing interconnects amongst the nanostructured devices will in time be overcome. Finally, we restrict attention to niche applications, in which the collective activity of a large number of nanostructured devices give rise to useful computational functions. The special purpose functional device concept adopted here can be contrasted with other approaches which envision the design of general purpose computers on the basis of quantum mechanical logic gates. This work has been unified under a particular technology based on the creation of arrays of nanometer-sized metallic islands. We consider different types of network mechanisms for the transfer of electrons between islands. Depending on the types of transport nonlinearities permitted by the network links, we show that it is possible to generated different kinds of global activity in these networks. We show, in addition that it is possible to impart a computational interpretation to these global activities. In particular, we show that within a classical circuit theoretic model, non-monotone nonlinearities in the local transport can yield global associative memory effects. We then show that this interpretation will remain valid even when single-electron effects come into play, provided that the effective capacitance of the nanometallic islands is not too small. We then investigate networks of islands in which the sole nonlinearity arises from single-electronics. These networks are shown to be capable of associative memory effects, as well as yield approximate solutions to certain NP-complete optimization problems, provided that there is sufficient flexibility in the choice of inter-island capacitances. Proposed future work includes: (a) Development of novel theoretical techniques for the analysis and design of nanoelectronic networks, (b) Development of detailed simulators for nanoelectronic functional devices on parallel machines, and (c) Incorporation of novel nanoelectronic device and network mechanisms in functional devices. ***

9523423 Roychowdhury 电子器件小型化的不断进步使得制造特征尺寸在 1-100nm 范围内的纳米电子器件成为可能。 然而，人们普遍认为，由于纳米结构器件的尺寸小和载流能力低，传统的集成电路设计技术将变得不切实际。 设想新方法来规避这个问题的提案已经开始认真出现。 这些提案中的大多数都使用全局相干量子系统来产生计算能力。 我们与这些提议的不同之处在于，我们使用半经典全局模型作为构思纳米电子功能器件的基础。 另一个出发点是我们的假设，即当前感知到的实现纳米结构器件之间互连的限制将及时得到克服。 最后，我们将注意力限制在利基应用中，其中大量纳米结构器件的集体活动产生了有用的计算功能。 这里采用的专用功能器件概念可以与设想基于量子力学逻辑门的通用计算机设计的其他方法进行对比。 这项工作已统一在基于纳米尺寸金属岛阵列创建的特定技术下。 我们考虑用于岛屿之间电子传输的不同类型的网络机制。 根据网络链接允许的传输非线性类型，我们表明可以在这些网络中产生不同类型的全局活动。 此外，我们还表明，可以对这些全球活动进行计算解释。 特别是，我们证明在经典电路理论模型中，局部传输中的非单调非线性可以产生全局联想记忆效应。 然后我们证明，即使单电子效应发挥作用，只要纳米金属岛的有效电容不太小，这种解释仍然有效。 然后，我们研究了岛屿网络，其中唯一的非线性来自单电子器件。 这些网络被证明能够产生关联记忆效应，并且能够为某些 NP 完全优化问题提供近似解决方案，前提是岛间电容的选择有足够的灵活性。 拟议的未来工作包括：（a）开发用于分析和设计纳米电子网络的新颖理论技术，（b）开发并行机上纳米电子功能器件的详细模拟器，以及（c）将新颖的纳米电子器件和网络机制纳入功能器件中。 ***