NER: Solid Electrolytic Flash Memory Devices

提案编号：0403218 INSTUTION：CASE WESTERN RESTORY PRINCIPAL调查员：Tabib-Azar，MassoodTITLE：NER：Solid Electrlytic Flash Memory Devices摘要：这项探索性研究的主要目标是开发一种新型的基于固体电解质(如CuxS和AgST)的非易失性？存储设备这些设备基于纳米级的金属线，通过在薄的固体电解质薄膜上通过电极传递电流而生长。非常类似于机械开关，由电极之间的金属线的存在(即，高电导)状态或缺少(即，低电导)状态来给出存储器的“1”和“0”状态。所提出的器件具有简单的“交叉杆”几何结构，这使得它们非常适合于高成品率的超大规模集成。非易失性存储器是嵌入式系统中不可或缺的一部分，在新兴系统中的重要性日益增长。在新兴系统中，操作系统存储在非易失性存储器中以便于更新。所提出的研究在纳米对象的自组织和强制组装、自愈和可编程互连和断开结以及用于传感和信息处理的弱耦合量子粒子中还有许多其他应用。所提出的装置可用于研究和演示具有有趣和重要的量子化电学性质的光学透明固体电解质薄膜中具有分形几何形状的导线的实时生长。

PROPOSAL NO: 0403218INSTITUTION: Case Western ReservePRINCIPAL INVESTIGATOR: Tabib-Azar , MassoodTITLE: NER: Solid Electrolytic Flash Memory DevicesAbstract:The main objective of this exploratory study is to develop a new class of non-volatile ?memory devices based on solid-electrolytes such as CuxS and AgSThese devices are based on nanometer scale metallic wires grown by passing electric currents through electrodes on thin solid-electrolyte films. Very much like mechanical switches the "1" and "0" states of the memory is given by the presence (i.e., high conductance) state or lack (i.e., low conductance) state of a metallic wire between the electrodes. The proposed devices have a simple "cross-bar" geometry that makes them ideal for very large scale integration with high yield. Non-volatile memories are an integral part of "embedded systems" with growing importance in emerging systems where operating systems are stored in non-volatile memories for easy updating.There are many other applications of the proposed studies in self-organized and forced assembly of nano-objects self-healing and programmable interconnects and break junctions and in weakly-coupled quantum particles for sensing and information processing. The proposed devices can be used to study and demonstrate real-time growth of wires with fractal geometry in optically transparent solid electrolyte films with interesting and important quantized electrical properties.