Graduate Student Industrial Fellowship: Investigation of Transport Properties in Bipolar Quantum Resonant Tunneling Transistors

我们建议测量和分析优化双极量子阱谐振调谐晶体管（Biopolar Quantum-Well Resonant-Tunnel Transistor，简称BRTT）性能所需的器件参数，这是量子器件研究的前沿。 该器件可以最有效地用于无线通信的低相位噪声频率乘法器、冗余数字算术处理器的中央加法器元件以及超微型磁场传感器。 为这些应用准备这种量子晶体管需要对器件电流-电压（I-V）行为以及系统性能参数的基准测量有基本的了解。 该研究计划涉及德克萨斯A M大学NanoFAB中心和德州仪器公司之间的合作。 ***

9625590 Kirk We propose to measure and analyze device parameters needed to optimize the performance of the Biopolar Quantum-Well Resonant-Tunneling Transistor (BiQuaRTT) which is on the cutting edge of quantum device research. The applications where this device can be most effectively used are low-phase-noise frequency multipliers for wireless communications, central adder elements for redundant digit arithmetic processors, and submircon magnetic field sensors. The preparation of this quantum transistor for these applications requires a fundamental understanding of the device current-voltage (I-V) behavior, as well as benchmark measurements of system performance parameters. The research plan involves a collaboration between the NanoFAB Center at Texas A&M University and Texas Instruments, Incorporated. ***