Two-Stage Buffer Layers for Solar Power in a InGaP - Si Double Junction Cell

InGaP-Si 双结电池中用于太阳能的两级缓冲层

• 批准号: 1002133
• 负责人: Wiley Kirk
• 金额: --
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-15 至 2012-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1002133&HistoricalAwards=false
• 关键词: Two; Stage; Buffer; Layers; Solar

AbstractIntellectual MeritThe objective of this project is to monolithically integrate In0.50Ga0.50P on Si wafer substrates by using a thin nucleation layer of Ge followed by a metamorphic buffer comprised of step-graded InxGa1-xP. The thin 3 ML Ge layer will provide a nucleation template for the step-graded InxGa1-xP as well as provide a coherent, pseudomorphic interface at the top surface of the Si bottom p-n junction. We will be able to solve two key materials science issues together ? (i) provide nucleation for III-P semiconductors that normally do not interface well directly with Si atoms and (ii) provide a clean interfacial layer that can electrically passivate the n-type Si emitter layer of the Si bottom p-n junction. Broader ImpactThe National Academy of Engineering selected the top 14 engineering challenges for the 21st century facing humanity worldwide. Challenge #1 - "Make Solar Energy Economical? by ?overcoming the barriers to widespread solar power generation." Our project provides a way to address this societal grand challenge by demonstrating a two stage metamorphic buffer designed to monolithically integrate In0.50Ga0.50P and Si, despite lattice mismatch, into an efficient, affordable and nontoxic solar cell. Two graduate students will be engaged in semiconductor material characterization and epitaxial thin film synthesis. In addition, we will select a K-12 teacher from a local Independent School District to participate in a 6-week summer program. This program will focus on engaging the teacher with our research and the subsequent development of classroom materials for teaching future scientists, engineers, and technologists.

这个项目的目标是通过使用一个薄的Ge成核层和一个由分级的InxGa1-XP组成的变质缓冲器，在硅片衬底上单片集成In0.50Ga0.50P。薄的3ML Ge层将为阶梯状InxGa1-Xp提供成核模板，并在Si底部p-n结的顶部表面提供相干的、假象的界面。我们将能够一起解决两个关键的材料科学问题吗？(I)为通常不能与硅原子很好地直接界面的III-P半导体提供成核，以及(Ii)提供清洁的界面层，该界面层可以电钝化硅底部p-n结的n型硅发射极层。更广泛的影响美国国家工程院选出了21世纪全球人类面临的14大工程挑战。挑战1--“克服广泛使用太阳能发电的障碍，让太阳能变得经济实惠。”我们的项目提供了一种应对这一社会重大挑战的方法，展示了一种两阶段变形缓冲器，旨在尽管晶格不匹配，但将In0.50Ga0.50P和Si单片集成到高效、负担得起和无毒的太阳能电池中。两名研究生将从事半导体材料表征和外延薄膜合成。此外，我们将从当地独立学区挑选一名K-12教师参加为期6周的暑期计划。本课程的重点是让老师参与我们的研究，以及随后为教授未来的科学家、工程师和技术专家而开发的课堂材料。