GOALI: Nanomanufacturing of Atomically Precise Bipolar Electronic Devices

GOALI：原子级精确双极电子器件的纳米制造

• 批准号: 1563233
• 负责人: Wiley Kirk
• 金额: $ 20万
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-09-01 至 2020-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1563233&HistoricalAwards=false
• 关键词: GOALI; Nanomanufacturing; Atomically; Precise; Bipolar

The impact of atomically precise manufacturing on future economic activity cannot be overstated. In particular the development of atomically-precise bipolar electronic devices is a potentially disruptive technology, leading to job growth in manufacturing arenas where novel high-value applications can be exploited. It is expected that this development will also positively impact national security. Recent efforts show that precise placement of donor dopant atoms is feasible. This award will study the placement of acceptor dopant atoms with atomic precision and it should open pathways to empower a wide range of high-performance nanoelectronic devices, as well as potentially advance the development of quantum computation devices. A successful outcome would permit nanomanufacturing of a wide range of new bipolar devices with extraordinary performance characteristics. An atomically precise acceptor doping capability would enable new device regimes since both n-type and p-type regions would allow engineering new devices and circuit designs. Solving this problem would open new realms of unique device physics for later exploration. The collaborative effort with a proven nanotechnology industry partner will accelerate the rate of technology transfer and sharpen the focus on parts of the investigations that yield the most effective outcomes. This academic-small business collaboration offers opportunities for a graduate student to gain valuable experience in a well-established high-tech environment. The goal of the project is to demonstrate an acceptor as a p-type dopant for nanomanufacturing bipolar devices by atomically precise doping methods. This capability would enable new types of device regimes that offer unprecedented low-noise, high-bandwidth performances in analog electronic applications. Although atomically precise doping of n-type dopants has been demonstrated using phosphorous donors, the development of a suitable acceptor dopant species is unsolved since basic science questions remain unanswered. University researchers will address this problem by collaborating with the scientific staff of an industrial partner, which is the nation's leading small company in nanomanufacturing, using scanning tunneling microscopy (STM) lithography tools to produce atomically precise nanostructures. An innovative ultra-high vacuum approach that produces alanes will be investigated. These studies will produce acceptor species that adsorbs selectively on patterns of clean Si dimers. This outcome is needed by the industrial partner to enable STM based nanomanufacturing steps. In addition to the absorption studies, low-temperature dopant activation processes and the prevention of deleterious diffusion effects using silicon molecular-beam-epitaxy technology will be explored. Also, electrical characterization investigations will be done to examine electrical properties of p-doped regions.

原子精密制造对未来经济活动的影响怎么强调都不为过。特别是，原子精密双极电子器件的开发是一项潜在的颠覆性技术，导致制造业领域的就业增长，在这些领域，可以开发新的高价值应用。预计这一事态发展也将对国家安全产生积极影响。最近的努力表明，精确放置施主掺杂原子是可行的。该奖项将研究原子精度的受主掺杂原子的放置，它应该会为广泛的高性能纳米电子设备提供动力，并有可能推动量子计算设备的发展。一个成功的结果将允许纳米制造具有非凡性能特征的广泛的新的双极器件。原子精确的受主掺杂能力将实现新的器件制度，因为n型和p型区域都将允许设计新的器件和电路设计。解决这个问题将为以后的探索开辟独特的设备物理学的新领域。与一家经过验证的纳米技术行业合作伙伴的合作将加快技术转让的速度，并将重点放在产生最有效结果的部分调查上。这种学术与小企业的合作为研究生提供了在成熟的高科技环境中获得宝贵经验的机会。该项目的目标是展示接受者作为p型掺杂剂，通过原子精确掺杂方法制造纳米制造双极器件。这一能力将使新型设备制度成为可能，在模拟电子应用中提供前所未有的低噪声、高带宽性能。虽然已经证明了使用磷施主对n型掺杂剂进行原子精确掺杂，但由于基础科学问题仍未得到解答，合适的受主掺杂剂种类的开发仍未解决。大学研究人员将通过与一个工业合作伙伴的科学人员合作来解决这个问题，该工业合作伙伴是美国领先的纳米制造小公司，使用扫描隧道显微镜(STM)光刻工具来生产原子精密的纳米结构。将研究一种产生丙烷的创新超高真空方法。这些研究将产生选择性地吸附在干净的硅二聚体图案上的受体物种。工业合作伙伴需要这一成果来实现基于STM的纳米制造步骤。除了吸收研究，还将探索使用硅分子束外延技术的低温掺杂激活过程和防止有害扩散效应。此外，还将进行电学特性研究，以检查p掺杂区的电学性质。