Heterostructure Synthesis of Silicon-Based Materials for Quantum Electronics

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9306293 Kirk Silicon heterostructures, such as Si/ZnS, represent new directions for increasing the functional density of electronic systems through novel nanoelectronic device designs. In addition to single junction heterostructures, we propose investigation double and multilayer heteorstructures of the type ZnS/SiZnS/Si both experimentally and theoretically. The main efforts will go toward the determination of the physical conditions necessary for epitaxial growth of both ZnS onto Si as well Si onto ZnS. Once grown, the epilayers will be studied to determine their electronic transport, defect or dopant incorporation, interface conditions, and other characteristics (e.g. band offsets) which would affect device behavior. The growth of monocrystalline heterostructure layers of Si/ZnS will be done with molecular beam epitaxy in the first stage of the project. In later stages of the project, atomic layer eptitaxy will be developed since it offers greater potential for producing higher quality materials. To assist the experimental growth and processing work, theoretical band structure KKR calculations will be employed to determine bandgap line-ups, which will help refine and improve the growth conditions. ***