Heterostructure Synthesis of Silicon-Based Materials for Quantum Electronics

量子电子硅基材料的异质结构合成

• 批准号: 9306293
• 负责人: Wiley Kirk
• 金额: $ 46.11万
• 依托单位: Texas A&M Engineering Experiment Station
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9306293&HistoricalAwards=false
• 关键词: Heterostructure; Synthesis; Silicon; Based; Materials

9306293 Kirk Silicon heterostructures, such as Si/ZnS, represent new directions for increasing the functional density of electronic systems through novel nanoelectronic device designs. In addition to single junction heterostructures, we propose investigation double and multilayer heteorstructures of the type ZnS/SiZnS/Si both experimentally and theoretically. The main efforts will go toward the determination of the physical conditions necessary for epitaxial growth of both ZnS onto Si as well Si onto ZnS. Once grown, the epilayers will be studied to determine their electronic transport, defect or dopant incorporation, interface conditions, and other characteristics (e.g. band offsets) which would affect device behavior. The growth of monocrystalline heterostructure layers of Si/ZnS will be done with molecular beam epitaxy in the first stage of the project. In later stages of the project, atomic layer eptitaxy will be developed since it offers greater potential for producing higher quality materials. To assist the experimental growth and processing work, theoretical band structure KKR calculations will be employed to determine bandgap line-ups, which will help refine and improve the growth conditions. ***

硅异质结构，如Si/ZnS，代表了通过新型纳米电子器件设计来提高电子系统功能密度的新方向。除了单结异质结构外，我们还从实验和理论上研究了ZnS/SiZnS/Si型的双层和多层异质结构。主要的工作将是确定ZnS向Si和Si向ZnS外延生长所需的物理条件。一旦生长，将对脱膜进行研究，以确定其电子输运、缺陷或掺杂、界面条件和其他会影响器件行为的特性（例如带偏移）。项目一期将采用分子束外延的方法生长单晶Si/ZnS异质结构层。在项目的后期阶段，原子层外延技术将得到发展，因为它为生产更高质量的材料提供了更大的潜力。为了辅助实验生长和加工工作，将采用理论能带结构KKR计算来确定带隙线，这将有助于改进和改善生长条件。＊＊＊