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Low Temperature Investigations of Nanostructures and Disordered Mesoscopic Systems

Low Temperature Investigations of Nanostructures and Disordered Mesoscopic Systems
纳米结构和无序介观系统的低温研究
批准号:
9107460
负责人:
Wiley Kirk
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-09-01 至 1993-08-31

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中文摘要
翻译
我们建议继续我们的低温研究计划,无序介观体系和特殊设计的纳米结构。第一部分涉及输运过程中的量子干涉效应,将包括窄带隙介观导体和超晶格效应的研究。此外,我们设想在垂直隧道结构中进行单电子充电,探索“库仑封锁”与量子化通量电导效应的问题,并开发一种分栅静电AB装置。材料制造和加工的独特进步使全新的实验系统成为可能。这项工作旨在全面了解量子相位干涉和相关输运效应如何在复杂的无序系统中进化。它直接关系到当前和不久的将来在科学和工业中开发强大的测量和控制新设备的努力。
英文摘要
We propose to continue our low-temperature research program on disordered mesoscopic systems and specially designed nanostructures. The first part, which concerns quantum interference effects in transport processes, will comprise studies of narrow-bandgap mesoscopic conductors and superlattice effects. In addition, we envisage work on single-electron charging in a vertical tunneling structure, probing the question of "coulomb blockade" vs quantized-flux conductance effects, and developing a split-gate, electrostatic AB device. Unique advances in materials fabrication and processing have given accessibility to entirely new experimental systems. This work aims at a comprehensive understanding of how quantum phase interference and correlated transport effects evolve in complex disordered systems. It bears directly upon current and near-future efforts to develop powerful new devices for measurement and control in science and industry.
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Workshop: Designed Quantum Materials Workshop; To be Held at The National Institute of Standards and Technology, in Gaithersburg, MD January 23-24, 2018
  • 批准号:
    1747578
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    2017
  • 负责人:
    Wiley Kirk
  • 依托单位:
GOALI: Nanomanufacturing of Atomically Precise Bipolar Electronic Devices
  • 批准号:
    1563233
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.0万
  • 财政年份:
    2016
  • 负责人:
    Wiley Kirk
  • 依托单位:
Two-Stage Buffer Layers for Solar Power in a InGaP - Si Double Junction Cell
  • 批准号:
    1214172
  • 项目类别:
    Standard Grant
  • 资助金额:
    $32.21万
  • 财政年份:
    2012
  • 负责人:
    Wiley Kirk
  • 依托单位:
Two-Stage Buffer Layers for Solar Power in a InGaP - Si Double Junction Cell
  • 批准号:
    1002133
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2010
  • 负责人:
    Wiley Kirk
  • 依托单位:
海外基金