Degenerate Quantum Numbers in Silicon Germanium Heterostructures

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w:\awards\awards96\*.doc 9631709 Murphy This Research Planning Grant will provide support for research to investigate the possibility of using the newly developed high mobility Si/SiGe heterostructures (by others) to study skyrmions. These skyrmions are topological many-body excitations in a two dimensional electron system (2DES) and have at present been observed in high mobility GaAs material. The Si/SiGe material has potential for integrated circuit use and this planning grant will attempt to control the valley splitting in Si/SiGe and tune it to near zero in order to enhance the prospects to observe skyrmions. Demonstration of tunability is the primary goal. %%% A predicted new type of electron excitation in a planar electron system (two-dimensional) called skyrmions has been observed in gallium arsenide material that can be made with high electron mobility. This high electron mobility has recently been produced in a silicon/silicon-germanium multilayer structure and this Research Planning Grant will support the investigation of this new material in which skyrmions can be identified. Since the silicon/silicon-germanium material has potential for commercial use in the electronics industry the understanding of the behavior of the excitations that affect the electron transport is of considerable interest. ***