Degenerate Quantum Numbers in Silicon Germanium Heterostructures

这项研究计划资助将为研究使用新开发的高迁移率Si/SiGe异质结构（由其他人）研究skyrmions的可能性提供支持。这是二维电子系统（2DES）中的拓扑多体激发，目前已在高迁移率的砷化镓材料中观察到。Si/SiGe材料具有集成电路使用的潜力，该计划拨款将试图控制Si/SiGe中的谷分裂，并将其调整到接近零，以增强观测天空的前景。演示可调性是主要目标。在具有高电子迁移率的砷化镓材料中观察到一种被预测的平面电子系统（二维）中称为skyrmions的新型电子激发。这种高电子迁移率最近已经在硅/硅-锗多层结构中生产出来，这项研究计划拨款将支持对这种新材料的研究，在这种新材料中可以识别出skyrmions。由于硅/硅锗材料在电子工业中具有潜在的商业用途，因此对影响电子传输的激发行为的理解是相当有趣的。＊＊＊

w:\awards\awards96\*.doc 9631709 Murphy This Research Planning Grant will provide support for research to investigate the possibility of using the newly developed high mobility Si/SiGe heterostructures (by others) to study skyrmions. These skyrmions are topological many-body excitations in a two dimensional electron system (2DES) and have at present been observed in high mobility GaAs material. The Si/SiGe material has potential for integrated circuit use and this planning grant will attempt to control the valley splitting in Si/SiGe and tune it to near zero in order to enhance the prospects to observe skyrmions. Demonstration of tunability is the primary goal. %%% A predicted new type of electron excitation in a planar electron system (two-dimensional) called skyrmions has been observed in gallium arsenide material that can be made with high electron mobility. This high electron mobility has recently been produced in a silicon/silicon-germanium multilayer structure and this Research Planning Grant will support the investigation of this new material in which skyrmions can be identified. Since the silicon/silicon-germanium material has potential for commercial use in the electronics industry the understanding of the behavior of the excitations that affect the electron transport is of considerable interest. ***