Degenerate Quantum Numbers in Silicon Germanium Heterostructures

硅锗异质结构中的简并量子数

• 批准号: 9631709
• 负责人: Sheena Murphy
• 金额: $ 2.3万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-01 至 1998-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9631709&HistoricalAwards=false
• 关键词: Degenerate; Quantum; Numbers; Silicon; Germanium

w:\awards\awards96\*.doc 9631709 Murphy This Research Planning Grant will provide support for research to investigate the possibility of using the newly developed high mobility Si/SiGe heterostructures (by others) to study skyrmions. These skyrmions are topological many-body excitations in a two dimensional electron system (2DES) and have at present been observed in high mobility GaAs material. The Si/SiGe material has potential for integrated circuit use and this planning grant will attempt to control the valley splitting in Si/SiGe and tune it to near zero in order to enhance the prospects to observe skyrmions. Demonstration of tunability is the primary goal. %%% A predicted new type of electron excitation in a planar electron system (two-dimensional) called skyrmions has been observed in gallium arsenide material that can be made with high electron mobility. This high electron mobility has recently been produced in a silicon/silicon-germanium multilayer structure and this Research Planning Grant will support the investigation of this new material in which skyrmions can be identified. Since the silicon/silicon-germanium material has potential for commercial use in the electronics industry the understanding of the behavior of the excitations that affect the electron transport is of considerable interest. ***

w：\awards\awards96\*.doc 9631709 Murphy 这项研究规划补助金将为研究提供支持，以调查使用新开发的高机动性的可能性。 Si/SiGe 异质结构（其他） 到 研究Skyrmions。 这些skyrmions是拓扑多体激发的二维电子系统（2DES），目前已被观察到在高迁移率GaAs材料。 硅/硅锗材料具有集成电路使用的潜力，这项计划拨款将试图控制硅/硅锗中的谷分裂，并将其调整到接近零，以提高观察skyrmions的前景。 演示可调性是主要目标。 在砷化镓材料中观察到了一种被称为skyrmions的平面电子系统（二维）中预测的新型电子激发，这种材料可以制成高电子迁移率。这种高电子迁移率最近已在硅/硅锗多层结构中产生，这项研究计划资助将支持对这种新材料的研究，其中可以识别skyrmions。 由于硅/硅锗材料在电子工业中具有商业用途的潜力，因此对影响电子传输的激发行为的理解具有相当大的兴趣。 ***