Epitaxial Microstructures and Metallic Interfaces on Siliconand Silicon Germanium Alloys

9633547 Nemanich本研究项目旨在显著提高对金属-半导体界面的基本了解，特别是在GeSi表面肖特基势垒的形成方面，而且还在应变对势垒高度的影响等更广泛的问题方面。具体目标包括研究应变对势垒高度的影响，结合实验和理论研究金属-硅-锗相的形成，以及表面粗糙对接触电阻的影响。其总体思路是将先进的分子束外延和化学气相沉积生长技术、原位表面表征技术与高分辨透射电子显微镜等非原位薄膜表征技术相结合，探索模型三元界面的化学稳定性，研究应变和松弛SiGe合金界面的肖特基势垒，探索形貌粗糙的外延界面的材料和电学性质，并开启外延硅化物/硅纳米结构的新研究。该项目是一个多学科的项目，将基础材料物理和材料科学、合成和加工研究与先进的表征工具和分析方法相结合，以解决技术相关性强、潜在回报高的热门领域的前沿问题。这项研究将在基础水平上为先进电子/光子器件和集成电路的几个方面贡献基本的材料科学知识。此外，从这项研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9633547 Nemanich This research project aims for significant advancement in fundamental understanding of metal-semiconductor interfaces, particularly with respect to formation of Schottky barriers on GeSi surfaces, but also with respect to broader issues such as the effect of strain on barrier height. Specific goals include investigation of the effect of strain on barrier height, combined experimental/theoretical investigations of Metal-Silicon-Germanium phase formation, and the effect of surface roughening on contact resistance. The general approach is to combine advanced MBE and CVD growth methods and in-situ surface characterization techniques with high resolution TEM and other ex-situ film characterization techniques to explore the chemical stability of model ternary interfaces, examine the Schottky barrier at the interface of strained and relaxed SiGe alloys, to explore materials and electrical properties of morphologically rough epitaxial interfaces, and to initiate new studies of epitaxial silicide/silicon nano-structures. %%% The project is multidisciplinary combining fundamental materials physics and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of strong technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***