Epitaxial Microstructures and Metallic Interfaces on Siliconand Silicon Germanium Alloys

9633547 Nemanich该研究项目旨在对金属-半导体界面的基本理解取得重大进展，特别是关于GeSi表面上肖特基势垒的形成，但也涉及更广泛的问题，如应变对势垒高度的影响。 具体目标包括调查应变对势垒高度的影响，金属硅锗相形成的实验/理论研究相结合，以及表面粗糙化对接触电阻的影响。 一般的方法是将联合收割机先进的MBE和CVD生长方法和原位表面表征技术与高分辨率TEM和其他非原位膜表征技术相结合，以探索模型三元界面的化学稳定性，检查应变和弛豫SiGe合金界面处的肖特基势垒，探索形态粗糙的外延界面的材料和电学性质，并启动外延硅化物/硅纳米结构的新研究。该项目是多学科的，将基础材料物理学和材料科学合成与加工研究与先进的表征工具和分析方法相结合，以解决具有强大技术相关性和高潜在回报的热门领域的前沿问题。 该研究将为先进电子/光子器件和集成电路的几个方面提供基础材料科学知识。 此外，从该研究项目中获得的知识和理解预计将通过提供设计和生产改进材料和材料组合的基本理解和基础，以提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9633547 Nemanich This research project aims for significant advancement in fundamental understanding of metal-semiconductor interfaces, particularly with respect to formation of Schottky barriers on GeSi surfaces, but also with respect to broader issues such as the effect of strain on barrier height. Specific goals include investigation of the effect of strain on barrier height, combined experimental/theoretical investigations of Metal-Silicon-Germanium phase formation, and the effect of surface roughening on contact resistance. The general approach is to combine advanced MBE and CVD growth methods and in-situ surface characterization techniques with high resolution TEM and other ex-situ film characterization techniques to explore the chemical stability of model ternary interfaces, examine the Schottky barrier at the interface of strained and relaxed SiGe alloys, to explore materials and electrical properties of morphologically rough epitaxial interfaces, and to initiate new studies of epitaxial silicide/silicon nano-structures. %%% The project is multidisciplinary combining fundamental materials physics and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of strong technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***