课题基金 / 基金详情

Electrons in Diamond

Electrons in Diamond
金刚石中的电子
批准号:
2003567
负责人:
Robert Nemanich
金额:
$56.36万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2020
资助国家:
美国
项目状态:
已结题
起止时间:
2020-07-01 至 2024-06-30
关键词:

项目摘要

项目成果

Robert Nemanich的其他基金

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中文摘要
翻译
金刚石通常被认为是新一代电力电子器件的理想半导体材料。一个关键的应用将是电网的现代化,以整合能源、能源储存和各种用户需求,如直流和交流电力系统。此外,从钻石发射到水中的电子可以使各种应用的化学反应成为可能。这项研究将使用新的方法来修饰金刚石及其表面,以实现这些应用。该研究结果将支持金刚石功率晶体管、用于通信的高频元件和用于局部化学反应的电子发射到水中的发展,这是其他材料无法实现的。该项目将与亚利桑那州立大学日晷合作,这是一个支持物理科学保留和多样性的项目。与Sundial合作的活动包括与研究有关的讲习班、指导和发展面向社区成员和当地高中学生和教师的外联级科学会议。这些活动的目标是通过改善这些学生的保留和教育充实机会,增加传统上代表性不足的学生获得科学职业的机会。金刚石是一种宽带隙半导体,具有优异的半导体性能,长期以来一直被认为有利于高功率和高频应用。由于具有特定的表面终止,金刚石具有负电子亲和力,可以将电子注入水中进行局部催化。金刚石的高电子和空穴迁移率与其他所有宽带隙半导体相比是不寻常的。虽然p型掺杂硼已经被很好地表征了二十年,但n型掺杂磷最近在许多实验室中取得了进展,并且了解金刚石中的电子可以使基于电子传输和电子从导带态发射到真空或水中的新一代金刚石器件成为可能。本提案的重点是电子注入和金刚石-介电界面,以实现电子传输,约束和表面发射。该方案将解决实现钻石电子的三个基本挑战:1)电子能否被传输到钻石的传导带?金刚石的低或负电子亲和性意味着金刚石上接触金属的n型肖特基势垒很大,禁止电子注入。2)能否形成介电-金刚石界面,将电子限制在金刚石中?介电-半导体界面限制电子需要导带偏移,其中介电导带最小值高于金刚石导带最小值。3)金刚石的表面终止是否能够使电子持续有效地发射到真空或水中?虽然氢端金刚石具有负电子亲和力,但其表面在真空或氧化环境(包括水)中是不稳定的。从这个项目中获得的理解将为钻石作为电子半导体或局部催化的新应用奠定基础。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Nontechnical DescriptionDiamond is often considered as the ideal semiconductor material for a new generation of power electronics. A key application would be modernization of the electricity grid to integrate energy sources, energy storage and diverse users’ needs such as DC and AC power systems. Moreover, electrons emitted from diamond into water can enable chemical reactions for a variety of applications. The research will use new methods to modify diamond and its surface to enable these applications. The results will support the development of diamond power transistors, high frequency components for communications and electron emission into water for localized chemical reactions not possible with other materials. This project will collaborate with ASU Sundial, a program which supports retention and diversity in the physical sciences. The activities with Sundial include research related workshops, mentoring and the development of an outreach-level scientific conference, geared at community members and local high school students and teachers. The goal of these activities is to increase access to science careers to students who are traditionally under-represented, by improving retention and educational enrichment opportunities for these students.Technical Description Diamond is a wide band gap semiconductor with outstanding semiconductor properties that have long been recognized as beneficial for high power and high frequency applications. With specific surface termination, diamond has a negative electron affinity that can enable injection of electrons into water for localized catalysis. The high electron and hole mobilities of diamond are unusual compared to all other wide band gap semiconductors. While p-type doping with boron has been well characterized for two decades, n-type doping with phosphorus has recently advanced in a number of laboratories, and understanding Electrons in Diamond could enable a new generation of diamond devices based on electron transport and electron emission from conduction band states into vacuum or water. The focus of this proposal is on electron injection and diamond-dielectric interfaces to enable electron transport, confinement, and surface emission. This proposal will address three fundamental challenges to achieving Electrons in Diamond: 1) Can electrons be transported into the conduction band of diamond? The low or negative electron affinity of diamond means that the n-type Schottky barrier for contact metals on diamond will be large and prohibit electron injection. 2) Can a dielectric-diamond interface be formed that confines electrons in diamond? A dielectric-semiconductor interface to confine electrons requires a conduction band offset where the dielectric conduction band minimum is above the diamond conduction band minimum. 3) Can a surface termination of diamond enable continued efficient electron emission into vacuum or water? While hydrogen terminated diamond has a negative electron affinity, the surface is unstable in vacuum or oxidizing environments including water. The understanding gained from this program will set the stage for new applications of diamond as a semiconductor for electronics or localized catalysis.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
DOI: 10.1063/5.0145771
发表时间: 2023-06
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [Jesse M. Brown;Saurabh Vishwakarma;David J. Smith;R. Nemanich]
通讯作者: Jesse M. Brown;Saurabh Vishwakarma;David J. Smith;R. Nemanich
DOI: 10.1016/j.diamond.2022.109058
发表时间: 2022-04-30
期刊: DIAMOND AND RELATED MATERIALS
影响因子: 4.1
作者: [Johnson, Holly M., Brown, Jesse M., Nemanich, Robert J.]
通讯作者: Nemanich, Robert J.
Dielectric Interfaces on Doped Diamond Surfaces
  • 批准号:
    1710551
  • 项目类别:
    Standard Grant
  • 资助金额:
    $43.0万
  • 财政年份:
    2017
  • 负责人:
    Robert Nemanich
  • 依托单位:
Photo-Stimulated Nanopattern Formation Dynamics on Ferroelectric Surfaces
  • 批准号:
    1206935
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $45.0万
  • 财政年份:
    2012
  • 负责人:
    Robert Nemanich
  • 依托单位:
Photo-Stimulated Nanopattern Formation on Polarity Patterned Ferroelectric Surfaces
  • 批准号:
    0805353
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $42.04万
  • 财政年份:
    2008
  • 负责人:
    Robert Nemanich
  • 依托单位:
Acquisition of a Scanning Probe System for Characterization of Nanostructure Properties
  • 批准号:
    0320720
  • 项目类别:
    Standard Grant
  • 资助金额:
    $45.0万
  • 财政年份:
    2003
  • 负责人:
    Robert Nemanich
  • 依托单位:
国内基金
海外基金
高压下异质双峰晶粒—互锁结构diamond/cBN复合超硬材料的构筑及其强韧化机制研究
  • 批准号:
    52572042
  • 项目类别:
    面上项目
  • 资助金额:
    50.00万元
  • 批准年份:
    2025
  • 负责人:
    穆云超
  • 依托单位:
利用BCxN化合物高温高压下共析转变制备Diamond/c-BN/c-BCyN纳米多相复合超硬块材
  • 批准号:
    52472060
  • 项目类别:
    面上项目
  • 资助金额:
    48.00万元
  • 批准年份:
    2024
  • 负责人:
    黄权
  • 依托单位:
基于介质层调控的GaN-on-Diamond传热与结构特性研究
  • 批准号:
    --
  • 项目类别:
    面上项目
  • 资助金额:
    58万元
  • 批准年份:
    2021
  • 负责人:
    魏俊俊
  • 依托单位:
Diamond/Al复合材料钨基纳米多相界面演化机制及其构效关系研究
  • 批准号:
    51871072
  • 项目类别:
    面上项目
  • 资助金额:
    60.0万元
  • 批准年份:
    2018
  • 负责人:
    陈国钦
  • 依托单位: