Heteroepitaxial Silicide Formation on Silicon and Silicon Germanium Alloys

对在相干应变Si和Si1-xGex薄膜上形成硅化物和锗化硅化物薄膜进行基础研究。该研究的特点是能够独立于膜-基质界面化学成分改变膜-基质应变；不受化学因素影响，应变与薄膜-衬底偶联的热力学和电子性能直接相关；对沉积金属与si1 - xgex衬底反应形成硅化物或硅化锗化合物的化学和物理进行初步研究。这项研究有望对薄膜和界面的基本特性提供更深入的基本理解，这些特性对电子/光子材料的功能以及与器件和电路相关的特定成分和结构组合和配置至关重要。从应用的角度来看，了解这些性质及其与材料合成和加工的关系对半导体器件的设计和制造非常有益。研究结果对大规模、高速集成电子和光子器件及电路技术具有普遍意义。

Fundamental research to investigate the formation of silicide and silicide-germanide films on coherently strained Si and Si1-xGex films will be conducted. Special features of the research are the ability to alter film-substrate strain independently of film-substrate interfacial chemical composition; the direct correlation of strain, independent of chemical factors, with thermodynamic and electronic properties of the film-substrate couple; and, preliminary studies of the chemistry and physics of formation of silicide or silicide-germanide compounds from deposited metals reacted with Si1-xGexsubstrates. %%% This research is expected to provide deeper fundamental understanding of basic properties of thin films and interfaces critically important to the functionality of electronic/photonic materials and particular compositional and structural combinations and configurations relevant to devices and circuits. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is highly beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.