GOALI/IUCP: Modeling and Control of Wire Saw Manufacturing Processes

GOALI/IUCP：线锯制造过程的建模和控制

• 批准号: 9634889
• 负责人: Imin Kao
• 金额: $ 26.53万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-09-01 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9634889&HistoricalAwards=false
• 关键词: GOALI; IUCP; Modeling; Control; Wire

9634889 Kao Wire sawing is a technology that has been used for may years to cut stone and wood, but today is used to slice the silicon wafers used in photovoltaic cells and semiconductors. These saws use multiple wires and an abrasive slurry to produce thin (on the order of 300-400 micron), relatively large diameter (200-300 millimeter) wafers from silicon ingots with excellent surface finish. This Grant Opportunity for Academic Liaison with Industry cooperative research project between the State University of New York at Stony Brook and GT Equipment Technologies, Inc. will develop models for the wire sawing process to design and build the next generation of wire saw capable of producing wafers less than 300 microns thick with kerf losses of between 150-200 microns. The technical approach will be to develop a mechanics and dynamic model of the sawing process that can be used to design a stiffness and tension control strategy for improving slicing accuracy. Experiments and unique speckle laser measurement techniques will be used to validate the model and control prior to the industrial partner's design of a prototype. This project will provide a fundamental model for this important process in electronics manufacture, leading to improved quality and productivity when fabricating wafers from silicon ingots. An integrated design and control approach for this equipment promises to reduce waste through both kerf losses and defective products, giving a technological lead to equipment manufactures competing in global markets.

钢丝锯是一种已经使用了5年的切割石材和木材的技术，但今天被用来切割光伏电池和半导体中使用的硅晶片。这些锯子使用多根电线和研磨浆，从表面光洁度极佳的硅锭中生产出薄（约300-400微米）、直径相对较大（200-300毫米）的晶圆。这是纽约州立大学石溪分校和GT设备技术公司之间的学术联络与工业合作研究项目的资助机会，将开发线锯工艺的模型，以设计和制造下一代线锯，能够生产厚度小于300微米，切口损失在150-200微米之间的晶圆。技术方法将是开发一个锯切过程的力学和动态模型，该模型可用于设计刚度和张力控制策略，以提高切片精度。在工业合作伙伴设计原型之前，将使用实验和独特的散斑激光测量技术来验证模型和控制。该项目将为电子制造中的这一重要过程提供一个基本模型，从而提高硅锭制造晶圆的质量和生产率。该设备的综合设计和控制方法有望减少通过切口损失和缺陷产品造成的浪费，使设备制造商在全球市场竞争中处于技术领先地位。