Chemical Composition Profiling of Ultra-thin Silcon Dioxide/Silicon Nitride and Other Alternative Multilayer Dielectrics for Advanced Microelectronic Devices

该奖项的目的是为北卡罗莱纳州立大学先进微电子设备工程研究中心提供资金，与罗格斯大学、国际商业机器公司和朗讯技术公司合作，在电子材料和设备性能的高级表征领域增加专业知识。罗格斯大学是离子束和x射线光电子能谱的卓越中心，IBM和朗讯技术公司在设备性能表征方面增加了专业知识。工程研究中心已成功生产出具有商业市场应用潜力的薄膜氮化堆叠栅极电子器件结构。这项合作将在单原子层水平上提供对这些结构的化学和物理结构的理解。如果设备要被行业接受，这种理解是必要的。该研究包括三个任务：1)材料合成（NC State）， 2)离子束和x射线光电子能谱（Rutgers University），以及3)先进器件结构单层材料规格定义（IBM和朗讯）。主要目标之一是将研究中获得的知识转化为工业。

9720424 Hauser The purpose of this award is to provide funds for the Engineering Research Center at North Carolina State University on Advanced Microelectronic Devices to collaborate with Rutgers University, International Business Machines, and Lucent Technologies to add expertise in the area of advanced characterization of electronic materials and device performance. Rutgers University is a center of excellence in ion beam and x-ray photoelectron spectroscopy, and IBM and Lucent Technologies add expertise in characterization of device performance. The Engineering Research Center has succeeded in producing thin film nitrided stacked gate electronic device structures that have the potential for application in commercial markets. This collaborative effort will provide understanding of the chemical and physical structure of these structures at the mono-atomic layer level. This understanding is necessary if the devices are to be accepted by the industry. The research consists of three tasks: 1) materials synthesis (NC State), 2) ion beam and x-ray photoelectron spectroscopy (Rutgers University), and 3) definition of materials specifications at the monolayer level for advanced device structures (IBM and Lucent). One of the main goals is to transfer knowledge gained in this research to industry.