Acquisition of Specialized Instrumentation for Research & Development of Materials, Devices, and Processes

采购专用研究仪器

基本信息

  • 批准号:
    9732697
  • 负责人:
  • 金额:
    $ 6.5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    1998
  • 资助国家:
    美国
  • 起止时间:
    1998-07-15 至 2000-12-31
  • 项目状态:
    已结题

项目摘要

9732697 Misra It is proposed by New Jersey Institute of Technology (NJIT) under the National Science Foundation Research Equipment program to acquire an BP 4156A Precision Semiconductor Parameter Analyzer and a Cascade Microtech (Summit 10552) low noise probe station. The HP 4156A with ultra-low leakage SMUs can measure up to 1fA and I(V, automatically extract process parameters, perform AC/DC device characterization. The low noise probe station will have femtoguard noise level with a micro-chamber that will accommodate wafers up to 6-inch diameter. The instrumentation will support a unified research effort across many undergraduate and graduate areas including physics, electrical engineering, materials science, environmental engineering and manufacturing. A strong body of research is currently in place at NJIT to support this instrumentation, with faculty expertise covering the range from wafer level testing, characterization of thin films and SOI, to individual device design, fabrication and testing, ultimately to the development of integrated systems for applications in manufacturing and industry. Research areas include new device design, plasma charging damage to thin gate oxides, large molecular ion implantation to silicon, tunneling through thin dielectrics, optical waveguides on silicon, Hall effect devices etc. This body of research is directly affiliated with NJIT's one-of-a-kind to a university, class 10, 6-inch capable cleanroom for silicon-based microprocessing that provides access to advanced state-of-the-art process methods and equipment to perform complex design, modeling, simulation, process characterization and prototype development, and generates synergy between industry and NJIT students, faculty and staff, leading to joint research opportunities and efficient technology transfer. NSF funding will help the undergraduate and graduate students to have hands on experience of the advanced characterization systems. Since NJIT has a significant presence of minority and w omen (-40% and -19% respectively) students it is expected that some of these students will have the opportunity to work on the state-of-the-art characterization system. The proposed instrumentation provides a unifying theme combining individual research and problems of emerging importance in the light of device scaling. Novel electronic, magnetic and optical devices can be designed and evaluated using the proposed sensitive measurement system. ***
小行星9732697 新泽西理工学院(NJIT)在国家科学基金会研究设备计划下提出购买BP 4156 A精密半导体参数分析仪和Cascade Microtech(Summit 10552)低噪声探针站。 HP 4156 A具有超低泄漏SMU,可测量高达1fA和I(V,自动提取工艺参数,执行AC/DC器件表征。 低噪声探针台将具有femtoguard噪声水平,并具有可容纳直径达6英寸的晶片的微腔室。 该仪器将支持许多本科生和研究生领域的统一研究工作,包括物理学,电气工程,材料科学,环境工程和制造业。 NJIT目前正在进行一系列强有力的研究,以支持这种仪器,教师的专业知识涵盖了从晶圆级测试,薄膜和SOI的表征,到单个器件设计,制造和测试,最终到制造和工业应用的集成系统的开发。 研究领域包括新器件设计、等离子体充电对薄栅氧化层的损伤、大分子离子注入硅、隧穿薄栅、硅上的光波导、霍尔效应器件等。用于硅基微处理的6英寸洁净室,提供先进的工艺方法和设备,以执行复杂的设计,建模,仿真,过程表征和原型开发,并产生工业和NJIT学生,教师和工作人员之间的协同作用,导致联合研究的机会和有效的技术转让。 NSF的资助将帮助本科生和研究生掌握先进表征系统的经验。 由于NJIT有少数民族和妇女(分别为-40%和-19%)学生的显着存在,预计这些学生中的一些将有机会在国家的最先进的表征系统工作。 拟议的仪器提供了一个统一的主题结合个人的研究和问题的新兴重要性,在设备缩放。 新的电子,磁性和光学器件可以设计和评估使用所提出的灵敏的测量系统。 ***

项目成果

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Durgamadhab Misra其他文献

Durgamadhab Misra的其他文献

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{{ truncateString('Durgamadhab Misra', 18)}}的其他基金

SNNnow: Probabilistic Learning for Deep Spiking Neural Networks: Foundations and Hardware Co-Optimization
SNNnow:深度尖峰神经网络的概率学习:基础和硬件协同优化
  • 批准号:
    1710009
  • 财政年份:
    2017
  • 资助金额:
    $ 6.5万
  • 项目类别:
    Standard Grant
KAUST-NSF Research Conference on Electronic Materials, Devices and Systems for a Sustainable Future at
KAUST-NSF 关于电子材料、设备和系统可持续未来的研究会议
  • 批准号:
    1503446
  • 财政年份:
    2015
  • 资助金额:
    $ 6.5万
  • 项目类别:
    Standard Grant
International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics. To be Held in Las Vegas, Nevada, October 10-15, 2010
高介电常数和其他介电材料用于纳米电子学和光子学的国际研讨会。
  • 批准号:
    1020234
  • 财政年份:
    2010
  • 资助金额:
    $ 6.5万
  • 项目类别:
    Standard Grant
International Symposium on High Dielectric Constant Gate Stacks will be held in Los Angeles, California on October 16-21, 2005.
高介电常数栅极堆栈国际研讨会将于2005年10月16日至21日在加利福尼亚州洛杉矶举行。
  • 批准号:
    0535679
  • 财政年份:
    2005
  • 资助金额:
    $ 6.5万
  • 项目类别:
    Standard Grant
Passivation of Silicon Dangling Bonds by Deuterium Implantation
氘注入钝化硅悬键
  • 批准号:
    0140584
  • 财政年份:
    2002
  • 资助金额:
    $ 6.5万
  • 项目类别:
    Continuing Grant
Study of Defects and Process induced Damage in Si1-xGex Materials
Si1-xGex 材料中的缺陷和过程诱导损伤的研究
  • 批准号:
    9207665
  • 财政年份:
    1992
  • 资助金额:
    $ 6.5万
  • 项目类别:
    Standard Grant

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  • 批准号:
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    8406980
  • 财政年份:
    1984
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  • 财政年份:
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