Acquisition of Specialized Instrumentation for Research & Development of Materials, Devices, and Processes

9732697 MISRA由新泽西理工学院在国家科学基金会研究设备计划下提出，收购BP 4156A精密半导体参数分析仪和Cascade Microtech(Summit 10552)低噪声探测站。具有超低泄漏SMU的HP 4156A可以测量高达1fA和I(V)，自动提取工艺参数，执行AC/DC设备表征。低噪音探测站将具有FemtoGuard噪声级和一个微腔，可以容纳直径最大为6英寸的晶片。该仪器将支持许多本科生和研究生领域的统一研究努力，包括物理、电气工程、材料科学、环境工程和制造。NJIT目前拥有强大的研究团队来支持这一仪器，其教职员工的专业知识涵盖从晶片级测试、薄膜和SOI的表征，到单个器件的设计、制造和测试，最终到制造和工业应用的集成系统的开发。研究领域包括新器件设计、等离子体充电对薄栅氧化物的损伤、大分子离子注入硅、隧道穿透薄电介质、硅上的光波导、霍尔效应器件等。这项研究直接附属于NJIT独一无二的、能够提供10、6英寸硅基微加工净室的研究，该净室提供利用先进的工艺方法和设备进行复杂的设计、建模、模拟、工艺表征和原型开发，并产生产业和NJIT师生之间的协同效应，导致联合研究机会和高效的技术转移。NSF的资助将帮助本科生和研究生亲身体验先进的人物刻画系统。由于NJIT有相当多的少数族裔和女性学生(分别为-40%和-19%)，预计其中一些学生将有机会研究最先进的表征系统。拟议的仪器提供了一个统一的主题，结合了个人研究和根据设备比例出现的重要问题。利用所提出的灵敏测量系统，可以设计和评估新型的电子、磁性和光学设备。***

9732697 Misra It is proposed by New Jersey Institute of Technology (NJIT) under the National Science Foundation Research Equipment program to acquire an BP 4156A Precision Semiconductor Parameter Analyzer and a Cascade Microtech (Summit 10552) low noise probe station. The HP 4156A with ultra-low leakage SMUs can measure up to 1fA and I(V, automatically extract process parameters, perform AC/DC device characterization. The low noise probe station will have femtoguard noise level with a micro-chamber that will accommodate wafers up to 6-inch diameter. The instrumentation will support a unified research effort across many undergraduate and graduate areas including physics, electrical engineering, materials science, environmental engineering and manufacturing. A strong body of research is currently in place at NJIT to support this instrumentation, with faculty expertise covering the range from wafer level testing, characterization of thin films and SOI, to individual device design, fabrication and testing, ultimately to the development of integrated systems for applications in manufacturing and industry. Research areas include new device design, plasma charging damage to thin gate oxides, large molecular ion implantation to silicon, tunneling through thin dielectrics, optical waveguides on silicon, Hall effect devices etc. This body of research is directly affiliated with NJIT's one-of-a-kind to a university, class 10, 6-inch capable cleanroom for silicon-based microprocessing that provides access to advanced state-of-the-art process methods and equipment to perform complex design, modeling, simulation, process characterization and prototype development, and generates synergy between industry and NJIT students, faculty and staff, leading to joint research opportunities and efficient technology transfer. NSF funding will help the undergraduate and graduate students to have hands on experience of the advanced characterization systems. Since NJIT has a significant presence of minority and w omen (-40% and -19% respectively) students it is expected that some of these students will have the opportunity to work on the state-of-the-art characterization system. The proposed instrumentation provides a unifying theme combining individual research and problems of emerging importance in the light of device scaling. Novel electronic, magnetic and optical devices can be designed and evaluated using the proposed sensitive measurement system. ***