Acquisition of Specialized Instrumentation for Research & Development of Materials, Devices, and Processes

这是由新泽西理工学院（NJIT）在国家科学基金会研究设备计划下提出的，购买一台BP 4156A精密半导体参数分析仪和一个Cascade Microtech （Summit 10552）低噪声探测站。HP 4156A超低漏smu可测量高达1fA和I(V)，自动提取工艺参数，执行AC/DC器件表征。低噪音探测站将具有飞卫噪声水平，微室可容纳直径达6英寸的晶圆。该仪器将支持许多本科和研究生领域的统一研究工作，包括物理、电气工程、材料科学、环境工程和制造。目前，新泽西理工大学有一个强大的研究机构来支持这种仪器，教师的专业知识涵盖了从晶圆级测试，薄膜和SOI的表征，到单个器件的设计，制造和测试，最终到制造和工业应用的集成系统的开发。研究领域包括新型器件设计、等离子体充电损伤薄栅氧化物、大分子离子注入硅、通过薄介质的隧道、硅上的光波导、霍尔效应器件等。该研究机构直接隶属于新泽西理工大学独一无二的一所大学，10级，6英寸的硅基微处理洁净室，提供了最先进的工艺方法和设备，以执行复杂的设计，建模，仿真，工艺表征和原型开发，并在工业和新泽西理工大学的学生，教师和员工之间产生协同作用，导致联合研究机会和有效的技术转让。美国国家科学基金资助将帮助本科生和研究生有先进的表征系统的实践经验。由于NJIT有大量的少数族裔和女性学生（分别为-40%和-19%），因此预计其中一些学生将有机会研究最先进的特征系统。所提出的仪器提供了一个统一的主题，结合了个人研究和在设备缩放方面出现的重要问题。利用所提出的灵敏测量系统，可以设计和评估新的电子、磁性和光学器件。＊＊＊

9732697 Misra It is proposed by New Jersey Institute of Technology (NJIT) under the National Science Foundation Research Equipment program to acquire an BP 4156A Precision Semiconductor Parameter Analyzer and a Cascade Microtech (Summit 10552) low noise probe station. The HP 4156A with ultra-low leakage SMUs can measure up to 1fA and I(V, automatically extract process parameters, perform AC/DC device characterization. The low noise probe station will have femtoguard noise level with a micro-chamber that will accommodate wafers up to 6-inch diameter. The instrumentation will support a unified research effort across many undergraduate and graduate areas including physics, electrical engineering, materials science, environmental engineering and manufacturing. A strong body of research is currently in place at NJIT to support this instrumentation, with faculty expertise covering the range from wafer level testing, characterization of thin films and SOI, to individual device design, fabrication and testing, ultimately to the development of integrated systems for applications in manufacturing and industry. Research areas include new device design, plasma charging damage to thin gate oxides, large molecular ion implantation to silicon, tunneling through thin dielectrics, optical waveguides on silicon, Hall effect devices etc. This body of research is directly affiliated with NJIT's one-of-a-kind to a university, class 10, 6-inch capable cleanroom for silicon-based microprocessing that provides access to advanced state-of-the-art process methods and equipment to perform complex design, modeling, simulation, process characterization and prototype development, and generates synergy between industry and NJIT students, faculty and staff, leading to joint research opportunities and efficient technology transfer. NSF funding will help the undergraduate and graduate students to have hands on experience of the advanced characterization systems. Since NJIT has a significant presence of minority and w omen (-40% and -19% respectively) students it is expected that some of these students will have the opportunity to work on the state-of-the-art characterization system. The proposed instrumentation provides a unifying theme combining individual research and problems of emerging importance in the light of device scaling. Novel electronic, magnetic and optical devices can be designed and evaluated using the proposed sensitive measurement system. ***