Passivation of Silicon Dangling Bonds by Deuterium Implantation

本计画将利用离子注入的方式，导入氘来改善扩散退火的效果。例如，在MOS晶体管中，氘将在薄栅极氧化物生长之前注入硅衬底上。为了达到这个目的，我们将研究（1）氘注入能量和剂量对氧化层生长及其界面的影响。适当的剂量可以减少衬底损伤或消除位错环的产生，同时即使在随后的氧化物生长热循环之后也能满足悬挂键。通过研究离子注入后氘的分布，将优化热预算以控制物理掺入和随后的电特性。(2)其次，从界面的氘解吸的热动力学将进行研究，其对成品器件的电特性的影响将进行评估。(3)第三，研究了氘在Si/SiO_2系统中由于氧化物生长引起的扩散机制。该提案的重点是通过离子注入进行有效地掺入氘的实验研究。将进行该工艺与其他界面钝化方法的比较研究，例如各种退火处理、在部分完成的器件上注入氘（TI方法）和氢注入。此外，我们将采用离子注入在硅纳米晶体用于光电子应用的氘。尽管本研究的主要焦点将朝向Si/SiO2界面，但额外的任务将研究GaAs器件以研究氘注入在光电子器件中的行为。将采用广泛的物理和电气特性。亚微米MOSFET将被用来实现在超薄二氧化硅/硅界面注入氘的行为，这是目前知之甚少的基本理解。测试设备将在NJIT的微加工中心与研究生和本科生的帮助下处理。由于新泽西理工学院有大量少数民族学生和女学生（分别约占40%和18%），预计其中一些学生将有机会为该项目做出贡献。最近获得的最先进的设备表征系统（NSF支持）将用于NJIT的电气表征，而一些物理表征将在Agere Labs（前身为Lucent Technologies）进行。GaAs样品将由Anadigics制备。氘注入将在NJIT和离子注入公司（IICO）进行。这项尖端技术在全国的重要性，以及NJIT合格员工和学生以及Agere Labs和Anadigics研究人员的密切参与，将对推进该领域的知识基础产生重大影响。

This project will obviate the diffusion annealing by introducing deuterium through ion implantation. In MOS transistors, for example, deuterium will be implanted on silicon substrate before the thin gate oxide was grown. To achieve the objective, we will investigate (1) effect of deuterium implantation energy and dose on oxide growth and its interface. An appropriate dose can reduce substrate damage or eliminate creation of dislocation loops while satisfy the dangling bonds even after the subsequent thermal cycles of oxide growth. Thermal budgets will be optimized to control the physical incorporation and subsequent electrical characteristics by studying the distribution of deuterium after ion implantation. (2) Secondly, thermal kinetics of deuterium desorption from the interface will be studied and its effect on electrical characteristics of finished device will be evaluated. (3) Thirdly, the mechanisms of deuterium diffusion in Si/Si02 system due to oxide growth will be investigated. The focus of the proposal is to conduct an experimental investigation of incorporating deuterium effectively through ion implantation. Tasks will be undertaken for a comparative study of this process to other means of interface passivation such as various annealing treatments, deuterium implantation at a partially completed device (TI approach) and hydrogen implantation. In addition, we will incorporate deuterium using ion implantation in silicon nanocrystals used for optoelectronics applications. Even though the main focus of this research will be towards Si/Si02 interface, an additional task will study GaAs devices to investigate behavior of deuterium implantation in optoelectronic devices. Extensive physical and electrical characterization will be employed. Sub-micron MOSFETs will be used to achieve a fundamental understanding of the behavior of implanted deuterium at the ultra-thin silicon-dioxide/silicon interface, which is, at present, poorly understood.Test devices will be processed at the Microfabrication Center at NJIT with the help of graduate and undergraduate students. Since NJIT has a significant presence of minority and women students (~40% and ~18% respectively) it is expected that some of these students will have the opportunity to contribute to this project. A recently acquired state-of-the-art device characterization system (NSF supported) will be used for electrical characterization at NJIT whereas some of the physical characterization will be carried out at Agere Labs formerly Lucent Technologies. GaAs samples will be prepared by Anadigics. Deuterium implantation will be carried out at NJIT and at Ion Implantation Company (IICO). The high national importance of this cutting edge technology and close involvement of qualified staff and students at NJIT and researchers at Agere Labs and Anadigics will significantly impact on advancing knowledge base in this area.