Ultrafast Electron and Lattice Dynamics Solids

Mazur9807144这个凝聚态物理项目将采用光学技术来研究强飞秒激光脉冲激发后固体中的电子和晶格动力学。这些脉冲诱导的相位将在半导体、宽带隙半导体、金属和绝缘体中以晶体和非晶形式进行研究，以研究载流子弛豫过程。通过测量介电函数对飞秒激光激发的响应来确定相变的性质。计划进行更多的实验，以研究在高注入载流子密度下半导体和宽带隙半导体中的载流子弛豫过程。该研究项目的结果将进一步推进对激光激发材料中超快电子和晶格动力学的理解。这项研究将培养研究生掌握激光光谱学的最新技术，这是一个既具有基础性又具有技术重要性的领域。这个凝聚态物理项目采用光学技术来研究固体被强烈的飞秒激光脉冲照射后在超小时间间隔内发生的过程。强烈的激光脉冲导致固体中的原子重排，有时在材料中形成新的相。这些相变将在半导体、宽带隙半导体、金属和绝缘体中以晶体和非晶形式进行研究。感兴趣的是在激光脉冲之后晶格和电子达到平衡所需的时间。 以研究载流子弛豫过程。通过测量飞秒激光激发的光学响应的响应来确定相变的性质。计划进行更多的实验，以研究在高掺杂原子水平下半导体和宽带隙半导体中的载流子弛豫过程。该研究项目的结果将进一步推进对激光激发材料中超快电子和晶格动力学的理解。除了其直接的科学目标，拟议的研究将对应用领域和教育产生额外的影响。 所研究的材料和工艺在半导体技术、数据存储和激光材料加工中具有重要的应用。通过对本科生进行高质量的研究性教育，本研究也有助于科学和工程教育以及未来科学家和工程师的培养。

Mazur9807144This condensed matter physics project will employ optical techniques to study the electron and lattice dynamics in solids after excitation with intense femtosecond laser pulses. These pulses induce phase that will be investigated in semiconductors, wide-bandgap semiconductors, metals, and insulators in both crystalline and amorphous forms in order to study the carrier relaxation processes. The nature of the phase changes is determined by measuring the response of the dielectric function to femtosecond laser excitation. Additional experiments are planned to study carrier relaxation processes in semiconductors and wide-bandgap semiconductors at high injected carrier densities. The results of this research project will further advance understanding of ultrafast electron and lattice dynamics in laser-excited materials. The research will train graduate students in the latest techniques in laser spectroscopy, an area of both fundamental and technological importance.%%%This condensed matter physics project employs optical techniques to study the processes that occur during an ultra-small time interval after the solid has been illuminated by an intense femtosecond laser pulses. The intense laser pulse causes rearrangements of atoms in the solids, sometimes to new phases in the materials. These phase changes will be investigated in semiconductors, wide-bandgap semiconductors, metals, and insulators in both crystalline and amorphous forms. Of interest is the time required for the lattice and electrons to reach equilibrium after the laser pulse. in order to study the carrier relaxation processes. The nature of the phase changes is determined by measuring the response of the optical response to the femtosecond laser excitation. Additional experiments are planned to study carrier relaxation processes in semiconductors and wide-bandgap semiconductors at high levels of dopant atoms. The results of this research project will further advance understanding of ultrafast electron and lattice dynamics in laser-excited materials. Beyond its immediate scientific goals, the proposed research will have additional impact on application areas and education. The materials and processes studied have important applications in semiconductor technology, data storage, and laser materials processing. Through quality research-based education of undergraduate students, this research also contributes to science and engineering education and the training of future scientists and engineers.