GOALI: Process Monitoring and Development for Chemical Mechanical Polishing (CMP)

目标：化学机械抛光 (CMP) 的工艺监控和开发

• 批准号: 9813039
• 负责人: David Dornfeld
• 金额: $ 30.5万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9813039&HistoricalAwards=false
• 关键词: GOALI; Process; Monitoring; Development; Chemical

DMI-9813039Dornfeld Chemical-mechanical polishing (CMP) is one of the most critical steps in the production of multilayer silicon microelectronic devices. It has become one of the key roadblock issues in semiconductor manufacturing today. The decreasing line widths of semiconductor devices require new materials that further challenge the process. The objective of the proposed research is to use acoustic emission sensing technology to investigate the material removal mechanisms in CMP and as a basis for process monitoring. Material removal in CMP is dependent on both chemical and mechanical actions at the interface between the pad and the wafer surface. The focus here is on the mechanical interactions. The project will seek to determine the dependency of material removal (both at a specific point and over the wafer surface) on process variables such as work/pad gap thickness, abrasive size and shape, and polishing pad characteristics. In addition, pad design and patterning is important, and thus a basis for pad texture/groove design and optimization will be included. Process monitoring in CMP will focus on process variables important to work quality and production rate including pad wear and degradation, microscratching and other surface defects as well as uniformity over the wafer surface. The project is expected to advance the understanding of process mechanics and capability for process monitoring using acoustic emission on CMP. The collaboration with NIST provides excellent synergy for project resources and is valuable to education and technology transfer.

电话：[phone] 化学机械抛光（CMP）是制造多层硅微电子器件的关键步骤之一。 它已成为当今半导体制造业的关键障碍之一。 半导体器件的线宽不断减小需要新材料，这进一步挑战了工艺。 本研究的目的是利用声发射传感技术来研究化学机械抛光中的材料去除机理，并作为工艺监控的基础。 CMP中的材料去除取决于垫和晶片表面之间的界面处的化学和机械作用。 这里的重点是机械相互作用。 该项目将寻求确定材料去除（在特定点和晶片表面）对工艺变量的依赖性，如工作/垫间隙厚度，磨料尺寸和形状，以及抛光垫特性。 此外，焊盘设计和图案化也很重要，因此将包括焊盘纹理/凹槽设计和优化的基础。 CMP中的工艺监控将集中在对工作质量和生产率很重要的工艺变量上，包括抛光垫磨损和退化、微划痕和其他表面缺陷以及晶片表面的均匀性。 该项目预计将提高对工艺机械的理解，并提高利用CMP声发射进行工艺监测的能力。 与NIST的合作为项目资源提供了极好的协同作用，对教育和技术转让也很有价值。