NIRT: Extremely-Mismatched Materials for Advanced Nanoscale Devices

NIRT：用于先进纳米级器件的极其不匹配的材料

• 批准号: 0506950
• 负责人: Patrick Fay
• 金额: --
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-01 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0506950&HistoricalAwards=false
• 关键词: NIRT; Extremely; Mismatched; Materials; Advanced

0506950FayThis program involves materials and device research in high-performance nanoscale electronic devices based on extremely-mismatched materials (e.g. InAs, InSb). Two approaches for achieving high quality InAs, InSb, and III-Sb device heterostructures will be investigated: growth of nanometer-scale, highly lattice mismatched layers directly on insulating substrates using solid-phase epitaxy and recrystallization, and creation of composite substrates by wafer bonding using lattice-matched epitaxial films to enable subsequent regrowth of epitaxial InAs, InSb, and III-Sb heterostructures. Surface passivation is also a critical issue in nanodevices; novel non-aqueous surface passivation schemes will be investigated. The device research includes experimental and theoretical study of nanoscale transistors for logic as well as heterostructure backward tunnel diodes for millimeter-wave and THz sensing. Two transistor architectures-aggressively-scaled InAs and InSb channel field-effect transistors, and field-assisted lateral tunneling nanotransistors-will be explored, using extremely-mismatched materials grown on scalable insulating substrates. The program includes research-based training of undergraduate and graduate students in a team environment. Students will present their work at national and international venues to enhance their communication and presentation skills in preparation for research careers. The cross-disciplinary nature of the research lends itself to the development of case studies and examples for curricular enrichment, e.g. a means to introduce students to issues in materials science, surface science and chemistry, process and materials integration, and semiconductor device physics. The research will provide fundamental and new knowledge in materials science, as well as have far-reaching impact on electronic systems design and environmental and remote sensing.

0506950 Fay该计划涉及材料和器件的研究，在高性能纳米电子器件的基础上极端失配的材料（如砷化铟，锑化铟）。实现高品质的InAs，InSb，和III-Sb器件异质结构的两种方法将进行研究：纳米级的生长，高度晶格失配层直接在绝缘衬底上使用固相外延和再结晶，和创建复合衬底的晶片键合使用晶格匹配的外延膜，使随后的再生长的外延InAs，InSb，和III-Sb异质结构。表面钝化也是纳米器件中的一个关键问题;将研究新的非水表面钝化方案。器件研究包括用于逻辑的纳米级晶体管以及用于毫米波和太赫兹传感的异质结构反向隧道二极管的实验和理论研究。两个晶体管架构积极规模的砷化铟和锑化铟沟道场效应晶体管，场辅助横向隧穿纳米晶体管将探索，使用可扩展的绝缘基板上生长的极不匹配的材料。该计划包括在团队环境中对本科生和研究生进行基于研究的培训。学生将在国家和国际场所展示他们的作品，以提高他们的沟通和演讲技巧，为研究生涯做准备。研究的跨学科性质有助于案例研究和课程丰富的例子的发展，例如，向学生介绍材料科学，表面科学和化学，工艺和材料集成以及半导体器件物理问题的手段。该研究将提供材料科学的基础知识和新知识，并对电子系统设计以及环境和遥感产生深远影响。