NIRT: Extremely-Mismatched Materials for Advanced Nanoscale Devices

NIRT：用于先进纳米级器件的极其不匹配的材料

• 批准号: 0506950
• 负责人: Patrick Fay
• 金额: --
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-01 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0506950&HistoricalAwards=false
• 关键词: NIRT; Extremely; Mismatched; Materials; Advanced

0506950FayThis program involves materials and device research in high-performance nanoscale electronic devices based on extremely-mismatched materials (e.g. InAs, InSb). Two approaches for achieving high quality InAs, InSb, and III-Sb device heterostructures will be investigated: growth of nanometer-scale, highly lattice mismatched layers directly on insulating substrates using solid-phase epitaxy and recrystallization, and creation of composite substrates by wafer bonding using lattice-matched epitaxial films to enable subsequent regrowth of epitaxial InAs, InSb, and III-Sb heterostructures. Surface passivation is also a critical issue in nanodevices; novel non-aqueous surface passivation schemes will be investigated. The device research includes experimental and theoretical study of nanoscale transistors for logic as well as heterostructure backward tunnel diodes for millimeter-wave and THz sensing. Two transistor architectures-aggressively-scaled InAs and InSb channel field-effect transistors, and field-assisted lateral tunneling nanotransistors-will be explored, using extremely-mismatched materials grown on scalable insulating substrates. The program includes research-based training of undergraduate and graduate students in a team environment. Students will present their work at national and international venues to enhance their communication and presentation skills in preparation for research careers. The cross-disciplinary nature of the research lends itself to the development of case studies and examples for curricular enrichment, e.g. a means to introduce students to issues in materials science, surface science and chemistry, process and materials integration, and semiconductor device physics. The research will provide fundamental and new knowledge in materials science, as well as have far-reaching impact on electronic systems design and environmental and remote sensing.

0506950 FAYTHIS计划涉及基于极其匹配的材料（例如INAS，INSB）的高性能纳米级电子设备的材料和设备研究。将研究两种用于实现高质量INA，INSB和III-SB设备异质结构的方法：纳米尺度，高度晶格不匹配的层的增长，直接在使用固体相位外观和重新结晶的底物上直接进行绝缘层，并通过使用Lattial-Mattecial-Epialsial tone in tone Indection使用固体相构造来实现，并创建具有lattecialsial sigiate inteprate， INA，INSB和III-SB异质结构。表面钝化也是纳米版本中的关键问题。新型的非水表面钝化方案将进行研究。该设备研究包括用于用于逻辑以及异质结构的纳米级晶体管的实验和理论研究，用于毫米波和THZ感应。两个晶体管体系结构施加的INA和INSB通道场效应晶体管，以及野外辅助的侧向隧穿纳米晶体管，将使用在可扩展的绝缘底物上生长的极其匹配的材料，将探索。该计划包括在团队环境中基于研究的本科和研究生的培训。学生将在国家和国际场所介绍他们的作品，以增强他们的沟通和演示技巧，以准备研究职业。该研究的跨学科性质使案例研究的发展和课程丰富的示例的发展，例如向学生介绍材料科学，表面科学和化学，过程和材料整合以及半导体设备物理学问题的方法。该研究将提供材料科学方面的基本知识，并对电子系统设计以及环境和遥感产生深远的影响。