NIRT: Extremely-Mismatched Materials for Advanced Nanoscale Devices

点击翻译按钮获取中文摘要

0506950FayThis program involves materials and device research in high-performance nanoscale electronic devices based on extremely-mismatched materials (e.g. InAs, InSb). Two approaches for achieving high quality InAs, InSb, and III-Sb device heterostructures will be investigated: growth of nanometer-scale, highly lattice mismatched layers directly on insulating substrates using solid-phase epitaxy and recrystallization, and creation of composite substrates by wafer bonding using lattice-matched epitaxial films to enable subsequent regrowth of epitaxial InAs, InSb, and III-Sb heterostructures. Surface passivation is also a critical issue in nanodevices; novel non-aqueous surface passivation schemes will be investigated. The device research includes experimental and theoretical study of nanoscale transistors for logic as well as heterostructure backward tunnel diodes for millimeter-wave and THz sensing. Two transistor architectures-aggressively-scaled InAs and InSb channel field-effect transistors, and field-assisted lateral tunneling nanotransistors-will be explored, using extremely-mismatched materials grown on scalable insulating substrates. The program includes research-based training of undergraduate and graduate students in a team environment. Students will present their work at national and international venues to enhance their communication and presentation skills in preparation for research careers. The cross-disciplinary nature of the research lends itself to the development of case studies and examples for curricular enrichment, e.g. a means to introduce students to issues in materials science, surface science and chemistry, process and materials integration, and semiconductor device physics. The research will provide fundamental and new knowledge in materials science, as well as have far-reaching impact on electronic systems design and environmental and remote sensing.