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CAREER: Gas-Phase Chemistry of Thermal and Plasma CVD of Ti-Si-N Thin Films

CAREER: Gas-Phase Chemistry of Thermal and Plasma CVD of Ti-Si-N Thin Films
职业:Ti-Si-N 薄膜的热和等离子体 CVD 气相化学
批准号:
9875062
负责人:
Carmela Amato-Wierda
金额:
$32.04万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-12-15 至 2004-11-30

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中文摘要
翻译
这个职业项目代表了材料合成、加工和表征方面的研究和教育活动的结合。实时、原位实验确定了热和等离子体增强CVD(PECVD)过程中气相物种的类型、数量和能量,是研究活动的重点。其目的是从机理上理解气相物种在薄膜生长过程中如何与表面相互作用。分子束质谱将用于分析热和等离子体CVD反应中的气相物种。气相中性、离子和自由基组分的数量及其动力学和机理将与CVD工艺变量和薄膜性质相关联。本研究选用的化学体系是热增强化学气相沉积和等离子体增强化学气相沉积Ti-Si-N三元扩散势垒,它们是未来半导体器件金属化技术的候选对象。化学前体包括四(二乙酰胺)钛和TiI4作为钛源,硅烷和二硅烷作为硅源,氨和联氨作为氮源。教育方面涉及设计和实施一门新的以高年级学生/一年级研究生实验室为基础的材料合成/加工和表征课程。这门课程以三个并行的、为期一学期的、以探究为基础的实验室项目为特色,这些项目来自工业互动和当前材料科学的研究。学生被要求制定、实施和维护研究目标。这门课程将有来自化学、物理和工程学的跨学科注册。该课程拥有专用设备,包括:差示扫描量热仪、热重分析仪、动态机械分析仪、气相色谱-质谱仪、凝胶渗透色谱仪、四点电导探头、粉末/薄膜X射线衍射仪、溅射系统和CVD反应器。这项研究将在基础水平上为电子材料和先进器件/电路的重要方面贡献基本的材料科学知识。该项目的范围将使学生在材料合成、加工和表征方面面临挑战。该计划的一个重要特点是强调教育,强调研究和教育的融合。*
英文摘要
9875062Amato-WierdaThis CAREER project represents a combination of research and educational activities in materials synthesis, processing, and characterization. Real time, in situ experiments which determine the type, quantity, and energy of gas-phase species during thermal and plasma enhanced CVD (PECVD) are the focus of the research activities. The aim is to progress toward a mechanistic understanding of how gas-phase species interact with a surface in thin film growth. Molecular beam mass spectrometry will be used to analyze gas-phase species during thermal and plasma CVD reactions. The quantity of gas-phase neutral, ion, and radical species, and their kinetics and mechanisms, will be correlated with CVD process variables and film properties. The chemical system chosen for these studies is the thermal and plasma-enhanced CVD of Ti-Si-N ternary diffusion barriers, which are candidates for future metallization technology in semiconductor devices. Chemical precursors include tetrakis(diethylamido)titanium and TiI4 as titanium sources, silane and disilane for silicon sources, ammonia and hydrazine as N sources.The education aspect involves the design and implementation of a new upperclassmen/first-year graduate student laboratory-based course on Materials Synthesis/Processing and Characterization. The course features three concurrent, semester long, inquiry-based laboratory projects drawn from industrial interactions and current research in materials science. Students are required to formulate, implement, and defend research objectives. The course will have an interdisciplinary enrollment from chemistry, physics, and engineering. The course has dedicated equipment including: differential scanning calorimeter, thermal gravimetric analyzer, dynamic mechanical analyzer, gas chromatograph-mass spectrometer, gel permeation chromatograph, four-point conductivity probe, powder/thin film x-ray diffractometer, sputtering system, and a CVD reactor.%%%The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic materials and advanced devices/circuits. The scope of the project will expose students to challenges in materials synthesis, processing and characterization. An important feature of the program is the emphasis on education, and on the integration of research and education.***
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Implementation of a Materials Synthesis and CharacterizationLaboratory Component Across the Undergraduate Science and Engineering Curriculum
  • 批准号:
    9751376
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    1997
  • 负责人:
    Carmela Amato-Wierda
  • 依托单位:
General Chemistry Investigations: An Interdisciplinary, Research Team Laboratory
  • 批准号:
    9653007
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    1997
  • 负责人:
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POWRE: The Missing Link: Gas-Phase Chemistry of Plasma CVD
  • 批准号:
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
    1997
  • 负责人:
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Molecular Beam Mass Spectrometry Studies of the Kinetics and Mechanism of the Thermal and Plasma-Enhanced Chemical Vapor Deposition of Transition and Main Group Nitrides
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    $1.8万
  • 财政年份:
    1996
  • 负责人:
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