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CAREER: Gas-Phase Chemistry of Thermal and Plasma CVD of Ti-Si-N Thin Films

CAREER: Gas-Phase Chemistry of Thermal and Plasma CVD of Ti-Si-N Thin Films
职业:Ti-Si-N 薄膜的热和等离子体 CVD 气相化学
批准号:
9875062
负责人:
Carmela Amato-Wierda
金额:
$32.04万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-12-15 至 2004-11-30

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中文摘要
翻译
这个职业项目代表了材料合成、加工和表征方面的研究和教育活动的结合。实时、原位实验确定热等离子体增强CVD (PECVD)过程中气相物质的类型、数量和能量是研究的重点。目的是在薄膜生长过程中对气相物质如何与表面相互作用的机理理解上取得进展。分子束质谱法将用于分析热和等离子体CVD反应中的气相物质。气相中性、离子和自由基的数量,以及它们的动力学和机制,将与CVD工艺变量和膜性能相关。这些研究选择的化学系统是Ti-Si-N三元扩散势垒的热和等离子体增强CVD,这是未来半导体器件中金属化技术的候选者。化学前体包括钛源为四(二乙胺)钛和TiI4,硅源为硅烷和二硅烷,氮源为氨和联氨。教育方面包括设计和实施一门新的高年级学生/一年级研究生实验室课程,内容是材料合成/加工和表征。本课程以三个同时进行的、为期一学期的探究式实验项目为特色,这些项目取材于工业互动和材料科学的最新研究。学生需要制定、实施和捍卫研究目标。该课程将招收化学、物理和工程等跨学科的学生。本课程有专用设备:差示扫描量热仪、热重分析仪、动态机械分析仪、气相色谱-质谱联用仪、凝胶渗透色谱仪、四点电导探头、粉末/薄膜x射线衍射仪、溅射系统、CVD反应器。该项目涉及具有高技术相关性的材料科学主题领域的基础研究问题。该研究将为电子材料和先进器件/电路的重要方面提供基础材料科学知识。该项目的范围将使学生接触到材料合成、加工和表征方面的挑战。该计划的一个重要特点是强调教育,以及研究和教育的整合
英文摘要
9875062Amato-WierdaThis CAREER project represents a combination of research and educational activities in materials synthesis, processing, and characterization. Real time, in situ experiments which determine the type, quantity, and energy of gas-phase species during thermal and plasma enhanced CVD (PECVD) are the focus of the research activities. The aim is to progress toward a mechanistic understanding of how gas-phase species interact with a surface in thin film growth. Molecular beam mass spectrometry will be used to analyze gas-phase species during thermal and plasma CVD reactions. The quantity of gas-phase neutral, ion, and radical species, and their kinetics and mechanisms, will be correlated with CVD process variables and film properties. The chemical system chosen for these studies is the thermal and plasma-enhanced CVD of Ti-Si-N ternary diffusion barriers, which are candidates for future metallization technology in semiconductor devices. Chemical precursors include tetrakis(diethylamido)titanium and TiI4 as titanium sources, silane and disilane for silicon sources, ammonia and hydrazine as N sources.The education aspect involves the design and implementation of a new upperclassmen/first-year graduate student laboratory-based course on Materials Synthesis/Processing and Characterization. The course features three concurrent, semester long, inquiry-based laboratory projects drawn from industrial interactions and current research in materials science. Students are required to formulate, implement, and defend research objectives. The course will have an interdisciplinary enrollment from chemistry, physics, and engineering. The course has dedicated equipment including: differential scanning calorimeter, thermal gravimetric analyzer, dynamic mechanical analyzer, gas chromatograph-mass spectrometer, gel permeation chromatograph, four-point conductivity probe, powder/thin film x-ray diffractometer, sputtering system, and a CVD reactor.%%%The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic materials and advanced devices/circuits. The scope of the project will expose students to challenges in materials synthesis, processing and characterization. An important feature of the program is the emphasis on education, and on the integration of research and education.***
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Implementation of a Materials Synthesis and CharacterizationLaboratory Component Across the Undergraduate Science and Engineering Curriculum
  • 批准号:
    9751376
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    1997
  • 负责人:
    Carmela Amato-Wierda
  • 依托单位:
General Chemistry Investigations: An Interdisciplinary, Research Team Laboratory
  • 批准号:
    9653007
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    1997
  • 负责人:
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POWRE: The Missing Link: Gas-Phase Chemistry of Plasma CVD
  • 批准号:
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
    1997
  • 负责人:
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Molecular Beam Mass Spectrometry Studies of the Kinetics and Mechanism of the Thermal and Plasma-Enhanced Chemical Vapor Deposition of Transition and Main Group Nitrides
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    $1.8万
  • 财政年份:
    1996
  • 负责人:
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