Electro-Migration of Oxygen Vacancies in Perovskite Thin Films

钙钛矿薄膜中氧空位的电迁移

• 批准号: 9974341
• 负责人: Paul McIntyre
• 金额: $ 33.99万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2002-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9974341&HistoricalAwards=false
• 关键词: Electro; Migration; Oxygen; Vacancies; Perovskite

9974341McIntyreThe objective of this project on point defect migration in perovskite thin films is to develop a better understanding of electric field--induced oxygen vacancy motion in high-permittivity dielectric layers. The technological motivation for this work is derived from concerns about the reliability of perovskite dielectrics for integrated on-chip capacitors. Field-driven oxygen vacancy migration is a key feature of the proposed mechanisms for time-dependent degradation of these films. However, unambiguous physical characterization of oxygen vacancy electro-migration has not been reported to date in the high permitivity thin film systems of technological interest. In this project, vacancy migration kinetics will be measured and the data used to test proposed mechanisms for fatigue, imprint, and resistance degradation of perovskite dielectrics. Combined with measurements of ferroelectric hysteresis and charge transport across the dielectrics, the kinetic data may allow the development of quantitative and predictive models for the degradation processes.%%%The proposed research project combines experiments and modeling to improve our understanding of behavior of a class of materials that have immense technological importance in integrated circuit applications. The project will provide the students with a special educational experience through collaborative work (including extended visits and jointly-planned experiments) involving industrial researchers at Hewlett-Packard Laboratories and IBM's T.J. Watson Research Lab.***

9974341McIntyre钙钛矿薄膜中点缺陷迁移的这个项目的目的是更好地理解电场诱导的高介电常数介电层中的氧空位运动。 这项工作的技术动机来自于对集成片上电容器的钙钛矿晶体管可靠性的关注。 场驱动的氧空位迁移是这些薄膜随时间变化的降解机制的一个关键特征。 然而，明确的物理表征的氧空位电迁移还没有报道，到目前为止，在高介电常数薄膜系统的技术利益。 在这个项目中，将测量空位迁移动力学，并将数据用于测试钙钛矿晶体的疲劳，印记和电阻退化的拟议机制。 结合铁电滞后和电荷传输的测量，动力学数据可以允许开发降解过程的定量和预测模型。拟议的研究项目结合了实验和建模，以提高我们对一类在集成电路应用中具有巨大技术重要性的材料的行为的理解。 该项目将为学生提供一个特殊的教育经验，通过合作工作（包括延长访问和联合计划的实验），涉及工业研究人员在惠普实验室和IBM的T. J.沃森研究实验室。