Full-Band Particle Based Simulation for Three Dimensional Device Structures

三维器件结构的全带粒子仿真

• 批准号: 9976484
• 负责人: Stephen Goodnick
• 金额: $ 39万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-09-15 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9976484&HistoricalAwards=false
• 关键词: Full; Band; Particle; Based; Simulation

9976484GoodnickScaling of future semiconductor device technologies towards 0.1gm and below is placing new demands on semiconductor device simulation tools in terms of the physical models employed, and the computational demands of increased physical accuracy. At the same time, the exponential increase of semiconductor manufacture costs as device technology shrinks below this critical feature size mandates an increased dependence on simulation prior to manufacture. Important issues which will occur as devices continue to shrink include full three-dimensional geometry effects, new material systems, random dopant effects, discrete electron charging effects, and ultimately quantum mechanical effects at the smallest dimensions.Herein is proposed funding for a three year program of research with the goal of developing the necessary device simulation tools to meet the challenges of device scaling along the projected Semiconductor Industry Association (SIA) roadmap and beyond with special attention given to the requirements of modularity, robustness and reliability. These device tools will employ full-band Cellular Automata and Monte Carlo particle-based techniques developed under previous NSF funding for efficient solution of the semi-classical Boltzmann transport equation and beyond. These techniques will be combined with robust field solvers based on multi-grid and Bi-conjugate gradient stabilized methods including non-uniform grids for arbitrary two- and three-dimensional device geometries. Discrete impurity effects and intercarrier interactions will be included in this simulation level through a coupled mesh/particle force model to assess the fluctuation in device operating characteristics based on random impurity distributions. Collaboration with industrial partners will be undertaken for comparison and calibration with state of the art device technologies. Due to the computational demands of 3D semi-classical modeling, the proposed research will be supported by investigation of high-performance computing environments based on multi-processor systems, and clusters of workstations. Distributed algorithms for both the transport simulation tools and the coupled field solvers will be developed and applied for high-end computing as developed under previous funding.We will focus on comparison and calibration of the simulation tools with three particular technology areas in collaboration with industry and experimental groups, although the scope of the project goes far beyond these. One area involves EEPROM device technology, where 3D effects are prevalent, and where elevated electric fields necessitate full-band consideration as well. Another effort will focus on scaled Si MOS devices below 0.1 gm gate length, where a variety of new problems arise in terms of device scaling. Finally, we will consider newer material systems such as SOI and Si/SiGe technology, where little is known for example about hole transport, and improved transport models including full-band effects' are necessary.***

未来半导体器件技术向0.1gm及以下的缩放对半导体器件仿真工具提出了新的要求，包括所采用的物理模型以及增加物理精度的计算需求。同时，随着器件技术缩小到低于该临界特征尺寸，半导体制造成本的指数增加要求在制造之前增加对仿真的依赖。随着器件的不断缩小，将出现的重要问题包括全三维几何效应、新材料系统、随机掺杂剂效应、离散电子充电效应，并最终在最小尺寸的量子力学效应。这里提出了一项为期三年的研究计划，目标是开发必要的器件模拟工具，以满足沿着预计的半导体器件规模的挑战。行业协会（SIA）的路线图及更高标准，特别关注模块化、鲁棒性和可靠性的要求。这些设备工具将采用全波段元胞自动机和蒙特卡罗粒子为基础的技术开发下，以前的NSF资金的有效解决方案的半经典玻尔兹曼输运方程和超越。这些技术将与基于多重网格和双共轭梯度稳定方法（包括用于任意二维和三维器械几何形状的非均匀网格）的稳健场求解器相结合。离散杂质效应和载流子间相互作用将通过耦合网格/粒子力模型纳入该模拟级别，以评估基于随机杂质分布的器件工作特性波动。将与工业合作伙伴合作，与最先进的设备技术进行比较和校准。由于三维半经典建模的计算需求，所提出的研究将支持调查的高性能计算环境的基础上，多处理器系统，和集群的工作站。运输模拟工具和耦合场解算器的分布式算法将被开发，并应用于高端计算，如以前的资助下开发的。我们将专注于与工业和实验组合作，将模拟工具与三个特定技术领域进行比较和校准，尽管项目的范围远远超出这些。其中一个领域涉及EEPROM器件技术，其中3D效应很普遍，并且其中升高的电场也需要全频带考虑。另一项工作将集中在缩小的硅MOS器件低于0.1克的栅极长度，在设备缩放方面出现了各种新的问题。最后，我们将考虑较新的材料系统，如SOI和Si/SiGe技术，其中对空穴输运知之甚少，并且需要改进包括全带效应的输运模型。