GOALI: 2D High Resolution Dopant Profiling of Integrated Circuits Using Tapping Mode Atomic Force Microscopy

朗讯科技公司和PI之间拟议的为期三年的研究合作，重点是进一步开发最近展示的横向分辨二维掺杂谱分析新技术。这项新技术使用标准攻丝模式原子力显微镜（TMAFM），在悬臂梁和样品之间施加直流偏压。利用TMAFM相位信号，可以检测到偏置引起的与库仑力相关的掺杂密度变化，从而得到所研究表面的掺杂密度图。由于TMAFM用于扫描表面，因此仅与表面发生非常弱的机械相互作用，从而比迄今为止使用的方法（如扫描电容显微镜（SCM）或纳米扩散电阻谱（nano-SRP））的操作更稳定，其中探针在测量期间压在被调查表面上，导致探针寿命短。虽然TMAFM方法具有重复性和较长的探针寿命的优点，但其空间和掺杂密度分辨率的限制与现有方法相似。在此背景下，该计划旨在进一步探索该方法的基本物理机制，找到并优化其最大横向和掺杂密度分辨率，使用行业标准对其进行校准，并测试其在“现实生活”工业最先进集成电路样品中的应用。总之，这些努力的重点是将PI的方法发展成为集成电路研究、开发和生产的尖端计量工具。

0010059SchlafThe proposed three-year research collaboration between Lucent Technologies and the PI focuses on the further development of a recently demonstrated new technique for laterally resolved 2D dopant profiling. This new technique uses standard tapping mode atomic force microscopy (TMAFM) with an applied direct current (DC) bias between cantilever and sample. Using the TMAFM phase signal, bias induced dopant density related variations in Coulomb forces are detected, yielding a dopant density map of the investigated surface.Since TMAFM is used to scan the surface, only very weak mechanical interaction with the surface occurs resulting in a potentially more stable operation than in to date used methods such as scanning capacitance microscopy (SCM) or nano-spreading resistance profiling (nano-SRP) where the probe presses down on the investigated surface during the measurement resulting in short probe life. While offering the benefits of reproducibility and long probe life, the spatial and doping density resolution limits of the TMAFM method are potentially similar to the existing methods.In this context the proposed program aims at the further exploration of the basic physical mechanisms of the method, finding and optimizing its maximum lateral and dopant density resolutions, calibrating it using industry standards and testing its application to "real life" industrial state-of-the-art integrated circuit samples. In summary, these efforts focus on developing the PI's method into a cutting edge metrology tool for integrated circuit research, development and production.