GOALI: 2D High Resolution Dopant Profiling of Integrated Circuits Using Tapping Mode Atomic Force Microscopy

0010059Schlaf朗讯技术公司和PI之间拟议的为期三年的研究合作重点是进一步开发一种最近展示的横向分辨2D掺杂剂分析的新技术。这项新技术使用了标准的敲击模式原子力显微镜(TMAFM)，在悬臂梁和样品之间施加直流偏置。使用TMAFM相位信号，可以检测到偏置引起的库仑力中与掺杂浓度相关的变化，从而得到被调查表面的掺杂密度图。由于TMAFM用于扫描表面，因此与扫描电容显微镜(SCM)或纳米扩展电阻轮廓(Nano-SRP)等方法相比，只发生非常微弱的机械相互作用，从而使操作更稳定。在测量过程中，探针向下压在被调查表面上，导致探针寿命较短。在提供重复性和长探头寿命的同时，TMAFM方法的空间和掺杂密度分辨率极限可能与现有方法相似。在此背景下，建议的计划旨在进一步探索该方法的基本物理机制，找到并优化其最大横向和掺杂密度分辨率，使用行业标准对其进行校准，并测试其在现实生活中的工业最先进集成电路样品中的应用。总而言之，这些努力集中在将PI方法发展成为集成电路研究、开发和生产的尖端计量工具。

0010059SchlafThe proposed three-year research collaboration between Lucent Technologies and the PI focuses on the further development of a recently demonstrated new technique for laterally resolved 2D dopant profiling. This new technique uses standard tapping mode atomic force microscopy (TMAFM) with an applied direct current (DC) bias between cantilever and sample. Using the TMAFM phase signal, bias induced dopant density related variations in Coulomb forces are detected, yielding a dopant density map of the investigated surface.Since TMAFM is used to scan the surface, only very weak mechanical interaction with the surface occurs resulting in a potentially more stable operation than in to date used methods such as scanning capacitance microscopy (SCM) or nano-spreading resistance profiling (nano-SRP) where the probe presses down on the investigated surface during the measurement resulting in short probe life. While offering the benefits of reproducibility and long probe life, the spatial and doping density resolution limits of the TMAFM method are potentially similar to the existing methods.In this context the proposed program aims at the further exploration of the basic physical mechanisms of the method, finding and optimizing its maximum lateral and dopant density resolutions, calibrating it using industry standards and testing its application to "real life" industrial state-of-the-art integrated circuit samples. In summary, these efforts focus on developing the PI's method into a cutting edge metrology tool for integrated circuit research, development and production.