GOALI: 2D High Resolution Dopant Profiling of Integrated Circuits Using Tapping Mode Atomic Force Microscopy

GOALI：使用轻敲模式原子力显微镜对集成电路进行二维高分辨率掺杂剂分析

• 批准号: 0010059
• 负责人: Rudiger Schlaf
• 金额: $ 20.92万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-05-15 至 2005-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0010059&HistoricalAwards=false
• 关键词: GOALI; 2D; Resolution; Dopant; Profiling

0010059SchlafThe proposed three-year research collaboration between Lucent Technologies and the PI focuses on the further development of a recently demonstrated new technique for laterally resolved 2D dopant profiling. This new technique uses standard tapping mode atomic force microscopy (TMAFM) with an applied direct current (DC) bias between cantilever and sample. Using the TMAFM phase signal, bias induced dopant density related variations in Coulomb forces are detected, yielding a dopant density map of the investigated surface.Since TMAFM is used to scan the surface, only very weak mechanical interaction with the surface occurs resulting in a potentially more stable operation than in to date used methods such as scanning capacitance microscopy (SCM) or nano-spreading resistance profiling (nano-SRP) where the probe presses down on the investigated surface during the measurement resulting in short probe life. While offering the benefits of reproducibility and long probe life, the spatial and doping density resolution limits of the TMAFM method are potentially similar to the existing methods.In this context the proposed program aims at the further exploration of the basic physical mechanisms of the method, finding and optimizing its maximum lateral and dopant density resolutions, calibrating it using industry standards and testing its application to "real life" industrial state-of-the-art integrated circuit samples. In summary, these efforts focus on developing the PI's method into a cutting edge metrology tool for integrated circuit research, development and production.

0010059 Schlaf朗讯科技公司和PI之间拟议的三年研究合作的重点是进一步开发最近证明的横向分辨2D掺杂剂分布的新技术。这项新技术使用标准轻敲模式原子力显微镜（TMAFM），并在悬臂和样本之间施加直流（DC）偏置。使用TMAFM相位信号，检测库仑力中的偏置引起的掺杂剂密度相关变化，产生所研究表面的掺杂剂密度图。仅发生与表面的非常弱的机械相互作用，从而导致比迄今为止使用的方法（例如扫描电容显微镜（SCM）或纳米扩展电阻分布（nano-spreading resistance profiling））潜在地更稳定的操作（nano-SRP），其中探针在测量期间向下压在被研究的表面上，导致探针寿命短。 TMAFM方法在提供可重复性和长探针寿命的同时，其空间和掺杂密度分辨率极限与现有方法可能相似。在此背景下，拟议计划旨在进一步探索该方法的基本物理机制，找到并优化其最大横向和掺杂密度分辨率，使用工业标准对其进行校准，并测试其在“真实的”工业最先进的集成电路样品中的应用。总之，这些努力的重点是发展PI的方法成为集成电路研究，开发和生产的前沿计量工具。